LAUDATO, MARIO

LAUDATO, MARIO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Titolo Data di pubblicazione Autori File
Bipolar switching operation in phase change memory devices for high temperature retention 1-gen-2016 N. CiocchiniM. LaudatoE. VaresiA. L. LacaitaD. Ielmini +
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability 1-gen-2016 CIOCCHINI, NICOLALAUDATO, MARIOLACAITA, ANDREA LEONARDOIELMINI, DANIELE +
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses 1-gen-2017 M. LaudatoG. PedrettiD. Ielmini
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 1-gen-2019 Ambrosi E.Bricalli A.Laudato M.Ielmini D.
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 1-gen-2019 POLINO, NICOLA FRANCESCOLaudato M.Ambrosi E.Bricalli A.Ielmini D.
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 1-gen-2019 Wang W.Bricalli A.Laudato M.Ambrosi E.COVI, ERIKAIelmini D.
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 1-gen-2018 MILO, VALERIOPEDRETTI, GIACOMOLaudato, M.BRICALLI, ALESSANDROAMBROSI, ELIABIANCHI, STEFANOCHICCA, ELISABETTAIelmini, D.
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 1-gen-2016 Bricalli, A.Ambrosi, E.Laudato, M.Ielmini, D. +
Universal Thermoelectric Characteristic in Phase Change Memories 1-gen-2015 CIOCCHINI, NICOLALAUDATO, MARIOLACAITA, ANDREA LEONARDOIELMINI, DANIELE +