Thermoelectric effects play an important role in phase change memory (PCM), where phase transition and atomic migration are accelerated by temperature. A deep understanding of thermoelectric effects may allow a physics-based design of the cell structure and materials to optimize programming speed/energy and reliability. In this work we study the polarity-dependence of PCM characteristics, including crystallization, melting, electrical switching/holding, and ion migration. These characteristics show slower kinetics at negative voltage, which we attribute to thermoelectric effects of electrically-induced heating. We demonstrate a universal correlation of positive/negative kinetics, which we reproduce by modelling Thomson and Peltier heating in the PCM device.

Universal Thermoelectric Characteristic in Phase Change Memories

CIOCCHINI, NICOLA;LAUDATO, MARIO;LACAITA, ANDREA LEONARDO;IELMINI, DANIELE
2015

Abstract

Thermoelectric effects play an important role in phase change memory (PCM), where phase transition and atomic migration are accelerated by temperature. A deep understanding of thermoelectric effects may allow a physics-based design of the cell structure and materials to optimize programming speed/energy and reliability. In this work we study the polarity-dependence of PCM characteristics, including crystallization, melting, electrical switching/holding, and ion migration. These characteristics show slower kinetics at negative voltage, which we attribute to thermoelectric effects of electrically-induced heating. We demonstrate a universal correlation of positive/negative kinetics, which we reproduce by modelling Thomson and Peltier heating in the PCM device.
2015 IEEE 7th International Memory Workshop, IMW 2015
9781467369312
crystallization; ion migration; melting; phase change memory; thermoelectric effects; Hardware and Architecture; Software; Electrical and Electronic Engineering; Computer Science Applications1707 Computer Vision and Pattern Recognition, sezele
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/984957
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