RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

AMBROGIO, STEFANO
 Distribuzione geografica
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Continente #
NA - Nord America 3.732
EU - Europa 2.154
AS - Asia 914
SA - Sud America 271
AF - Africa 37
OC - Oceania 1
Totale 7.109
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Nazione #
US - Stati Uniti d'America 3.657
RU - Federazione Russa 905
IT - Italia 337
SG - Singapore 329
CN - Cina 310
AT - Austria 261
BR - Brasile 235
DE - Germania 148
FI - Finlandia 121
GB - Regno Unito 117
VN - Vietnam 94
CA - Canada 59
NL - Olanda 58
SE - Svezia 40
FR - Francia 28
IE - Irlanda 27
ES - Italia 25
ID - Indonesia 25
IN - India 25
UA - Ucraina 22
BD - Bangladesh 16
AR - Argentina 15
JO - Giordania 14
MA - Marocco 14
TR - Turchia 13
ZA - Sudafrica 13
KR - Corea 12
PL - Polonia 11
BE - Belgio 9
HK - Hong Kong 8
IQ - Iraq 8
MX - Messico 8
MY - Malesia 8
AE - Emirati Arabi Uniti 7
CO - Colombia 7
GR - Grecia 7
JP - Giappone 7
CH - Svizzera 6
PT - Portogallo 6
SI - Slovenia 6
CZ - Repubblica Ceca 5
EC - Ecuador 4
IL - Israele 4
NP - Nepal 4
PE - Perù 4
VE - Venezuela 4
AZ - Azerbaigian 3
BY - Bielorussia 3
DK - Danimarca 3
MU - Mauritius 3
PH - Filippine 3
SN - Senegal 3
UZ - Uzbekistan 3
AM - Armenia 2
GE - Georgia 2
HN - Honduras 2
HR - Croazia 2
JM - Giamaica 2
KG - Kirghizistan 2
NG - Nigeria 2
OM - Oman 2
PK - Pakistan 2
PS - Palestinian Territory 2
TJ - Tagikistan 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
AL - Albania 1
AO - Angola 1
BG - Bulgaria 1
BN - Brunei Darussalam 1
BW - Botswana 1
DO - Repubblica Dominicana 1
EE - Estonia 1
KZ - Kazakistan 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MD - Moldavia 1
NI - Nicaragua 1
NO - Norvegia 1
PF - Polinesia Francese 1
PY - Paraguay 1
SR - Suriname 1
TM - Turkmenistan 1
Totale 7.109
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Città #
Fairfield 449
Ashburn 403
Woodbridge 281
Santa Clara 261
Vienna 256
Chandler 248
Houston 225
Wilmington 206
Singapore 201
Seattle 197
Ann Arbor 189
Cambridge 166
Moscow 124
Beijing 97
Dearborn 96
Milan 87
Munich 85
Helsinki 75
London 61
Ottawa 53
Boardman 50
Council Bluffs 50
Lawrence 49
Medford 49
Los Angeles 43
Lucca 34
Hefei 31
Kent 31
Dublin 26
New York 24
San Diego 24
Des Moines 23
Jakarta 23
Amsterdam 22
Ho Chi Minh City 21
Dong Ket 20
Norwalk 18
Phoenix 17
Amman 14
Buffalo 14
Washington 14
Dallas 13
Frankfurt am Main 13
Shanghai 13
Chicago 11
Redmond 11
Livorno 10
Málaga 9
São Paulo 9
Belo Horizonte 8
Brasília 8
Casablanca 8
Guangzhou 8
Hanoi 8
Redwood City 8
Rio de Janeiro 8
Sepang 8
Stockholm 8
The Dalles 8
Hong Kong 7
Nanjing 7
Redondo Beach 7
San Jose 7
Warsaw 7
Badalona 6
Bogotá 6
Brooklyn 6
Izmir 6
Johannesburg 6
Bern 5
Brussels 5
Changchun 5
Chennai 5
Gif-sur-yvette 5
Girona 5
Haiphong 5
Istanbul 5
Jacksonville 5
Kharagpur 5
Zhengzhou 5
Atlanta 4
Auburn Hills 4
Biên Hòa 4
Changsha 4
Chengdu 4
Chongqing 4
Dhaka 4
Erbil 4
Falkenstein 4
Kilburn 4
Las Vegas 4
Mountain View 4
Pelotas 4
Rome 4
Samora Correia 4
Santa Maria 4
Turku 4
Xi'an 4
Baku 3
Bexley 3
Totale 4.724
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Nome #
Intervalley scattering in monolayer MoS2 probed by non-equilibrium optical techniques 339
Ultrafast valley relaxation dynamics in monolayer MoS2 probed by nonequilibrium optical techniques 244
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 228
Ultrafast valley depolarization dynamics in monolayer MoS2 221
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 199
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 194
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 192
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 188
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 180
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 176
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 166
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 165
Recommended Methods to Study Resistive Switching Devices 164
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 160
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks 159
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 158
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 157
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 157
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 156
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 156
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 155
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses 154
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 152
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 152
Data retention statistics and modelling in HfO2 resistive switching memories 151
(Invited) Resistive Switching in Metal Oxides: From Physical Modeling to Device Scaling 149
Device and method for generating radom numbers 147
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP) 137
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 133
Neuromorphic computing with resistive switching memory devices 127
Statistical modeling of program and read variability in resistive switching devices 125
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 122
True random number generation by variability of resistive switching in oxide-based devices 121
Understanding pulsed-cycling variability and endurance in HfOx RRAM 115
Spike-timing dependent plasticity in a transistor-selected resistive switching memory 111
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 109
Dispositivo e metodo per generare numeri casuali 109
Variability and cycling endurance in nanoscale resistive switching memory 107
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 106
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 105
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 104
Understanding switching variability and random telegraph noise in resistive RAM 103
Normally-off logic based on resistive switches - Part I: Logic gates 99
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 98
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 97
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 95
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 88
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 72
Stress-induced asymmetric switching and filament instability in electrochemical memories 69
Totale 7.171
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Categoria #
all - tutte 22.366
article - articoli 12.300
book - libri 0
conference - conferenze 7.864
curatela - curatele 0
other - altro 0
patent - brevetti 1.010
selected - selezionate 0
volume - volumi 1.192
Totale 44.732
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021307 0 0 0 0 0 29 16 35 39 81 40 67
2021/2022368 12 30 41 17 33 21 11 31 27 23 41 81
2022/2023561 54 65 19 59 71 80 3 42 91 24 37 16
2023/2024262 19 44 10 7 8 27 11 17 1 63 5 50
2024/20251.175 5 21 20 18 274 123 83 130 160 66 137 138
2025/20261.903 646 657 131 277 148 44 0 0 0 0 0 0
Totale 7.171