AMBROGIO, STEFANO
 Distribuzione geografica
Continente #
NA - Nord America 4.464
EU - Europa 2.909
AS - Asia 1.454
SA - Sud America 286
AF - Africa 85
OC - Oceania 2
Totale 9.200
Nazione #
US - Stati Uniti d'America 4.363
IT - Italia 974
RU - Federazione Russa 908
SG - Singapore 477
CN - Cina 396
AT - Austria 262
BR - Brasile 244
VN - Vietnam 186
DE - Germania 157
FI - Finlandia 128
GB - Regno Unito 128
FR - Francia 87
KR - Corea 78
CA - Canada 75
JP - Giappone 63
MA - Marocco 59
NL - Olanda 59
SE - Svezia 43
HK - Hong Kong 38
IN - India 38
ES - Italia 31
ID - Indonesia 27
IE - Irlanda 27
UA - Ucraina 23
PL - Polonia 21
TW - Taiwan 20
BD - Bangladesh 19
JO - Giordania 17
TR - Turchia 17
AR - Argentina 16
IQ - Iraq 16
ZA - Sudafrica 15
MX - Messico 14
BE - Belgio 10
CH - Svizzera 8
CO - Colombia 8
GR - Grecia 8
MY - Malesia 8
AE - Emirati Arabi Uniti 7
EC - Ecuador 6
PT - Portogallo 6
SI - Slovenia 6
CZ - Repubblica Ceca 5
IL - Israele 5
PH - Filippine 5
VE - Venezuela 5
JM - Giamaica 4
NP - Nepal 4
PE - Perù 4
AZ - Azerbaigian 3
BY - Bielorussia 3
DK - Danimarca 3
KG - Kirghizistan 3
MU - Mauritius 3
PK - Pakistan 3
SN - Senegal 3
TH - Thailandia 3
UZ - Uzbekistan 3
AM - Armenia 2
GE - Georgia 2
HN - Honduras 2
HR - Croazia 2
LT - Lituania 2
NG - Nigeria 2
OM - Oman 2
PS - Palestinian Territory 2
SA - Arabia Saudita 2
TJ - Tagikistan 2
TT - Trinidad e Tobago 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BG - Bulgaria 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GY - Guiana 1
KE - Kenya 1
KZ - Kazakistan 1
LB - Libano 1
LC - Santa Lucia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
NI - Nicaragua 1
NO - Norvegia 1
PF - Polinesia Francese 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
SR - Suriname 1
TM - Turkmenistan 1
Totale 9.200
Città #
Milan 677
Ashburn 488
Fairfield 449
Woodbridge 281
Singapore 280
San Jose 273
Santa Clara 273
Vienna 257
Chandler 248
Houston 228
Wilmington 207
Seattle 197
Ann Arbor 189
Cambridge 167
Moscow 124
Beijing 107
Council Bluffs 102
Dearborn 96
Munich 85
Helsinki 80
Boardman 73
The Dalles 68
Seoul 65
London 63
Tokyo 55
Ottawa 54
Los Angeles 51
Lawrence 50
Medford 49
Ho Chi Minh City 47
Kenitra 45
Lauterbourg 45
Lucca 34
Hefei 33
Kent 31
New York 29
Washington 28
Dublin 26
Hanoi 26
Hong Kong 25
San Diego 24
Des Moines 23
Jakarta 23
Phoenix 23
Amsterdam 22
Shanghai 21
Dallas 20
Dong Ket 20
Norwalk 18
Taipei 18
Amman 17
Frankfurt am Main 17
Warsaw 17
Las Vegas 16
Orem 16
Buffalo 15
Chicago 14
Rome 14
Badalona 12
North Charleston 12
Chennai 11
Redmond 11
Stockholm 11
São Paulo 11
Guangzhou 10
Livorno 10
Brasília 9
Haiphong 9
Málaga 9
Rio de Janeiro 9
Atlanta 8
Belo Horizonte 8
Casablanca 8
Chongqing 8
Redwood City 8
Sepang 8
Boydton 7
Johannesburg 7
Nanjing 7
Redondo Beach 7
Baghdad 6
Bogotá 6
Brooklyn 6
Changsha 6
Erbil 6
Izmir 6
Xi'an 6
Zhengzhou 6
Bern 5
Biên Hòa 5
Brussels 5
Changchun 5
Denver 5
Gif-sur-yvette 5
Girona 5
Guayaquil 5
Istanbul 5
Jacksonville 5
Kharagpur 5
Toronto 5
Totale 6.351
Nome #
Intervalley scattering in monolayer MoS2 probed by non-equilibrium optical techniques 368
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 352
Recommended Methods to Study Resistive Switching Devices 331
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 326
Data retention statistics and modelling in HfO2 resistive switching memories 322
Ultrafast valley relaxation dynamics in monolayer MoS2 probed by nonequilibrium optical techniques 291
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 262
Ultrafast valley depolarization dynamics in monolayer MoS2 253
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 241
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 233
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 231
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 228
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 213
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 210
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses 209
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 204
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 199
Device and method for generating radom numbers 197
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 195
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 193
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 192
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 190
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 189
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks 189
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 184
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 179
(Invited) Resistive Switching in Metal Oxides: From Physical Modeling to Device Scaling 175
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP) 172
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 156
Neuromorphic computing with resistive switching memory devices 156
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 152
True random number generation by variability of resistive switching in oxide-based devices 151
Statistical modeling of program and read variability in resistive switching devices 146
Dispositivo e metodo per generare numeri casuali 142
Spike-timing dependent plasticity in a transistor-selected resistive switching memory 136
Understanding pulsed-cycling variability and endurance in HfOx RRAM 135
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 133
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 133
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 132
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 130
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 128
Variability and cycling endurance in nanoscale resistive switching memory 124
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 123
Normally-off logic based on resistive switches - Part I: Logic gates 121
Understanding switching variability and random telegraph noise in resistive RAM 120
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 117
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 112
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 97
Stress-induced asymmetric switching and filament instability in electrochemical memories 90
Totale 9.262
Categoria #
all - tutte 26.204
article - articoli 14.420
book - libri 0
conference - conferenze 9.190
curatela - curatele 0
other - altro 0
patent - brevetti 1.225
selected - selezionate 0
volume - volumi 1.369
Totale 52.408


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202167 0 0 0 0 0 0 0 0 0 0 0 67
2021/2022368 12 30 41 17 33 21 11 31 27 23 41 81
2022/2023561 54 65 19 59 71 80 3 42 91 24 37 16
2023/2024262 19 44 10 7 8 27 11 17 1 63 5 50
2024/20251.175 5 21 20 18 274 123 83 130 160 66 137 138
2025/20263.994 646 657 131 277 148 197 473 225 443 406 198 193
Totale 9.262