PIROVANO, AGOSTINO
PIROVANO, AGOSTINO
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
2D QM simulation and optimization of decanano non-overlapped MOS devices
2003-01-01 Gusmeroli, Riccardo; SOTTOCORNOLA SPINELLI, Alessandro; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; F., Boeuf; T., Skotnicki
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
2009-01-01 Boniardi, Mattia; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; F., Pellizzer
A reliable technique for experimental evaluation of crystallization activation energy in PCMs
2008-01-01 Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; Lacaita, ANDREA LEONARDO
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
2000-01-01 A., Benvenuti; Lacaita, ANDREA LEONARDO; A., Pacelli; Pirovano, Agostino
Anomalous cells with low resistance in phase change memory arrays
2007-01-01 Mantegazza, Davide; Ielmini, Daniele; Pirovano, Agostino; Lacaita, ANDREA LEONARDO
Assessment of threshold switching dynamics in phase-change chalcogenide memories
2005-01-01 Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Mantegazza, Davide; F., Pellizzer; Pirovano, Agostino
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress
2002-01-01 MONZIO COMPAGNONI, Christian; Pirovano, Agostino; Lacaita, ANDREA LEONARDO
Explaining the dependences of the hole and electron mobilities in Si inversion layers
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Zandler; R., Oberhuber
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
2008-01-01 Mantegazza, Davide; Ielmini, Daniele; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; E., Varesi; F., Pellizzer; R., Bez
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
2011-01-01 Boniardi, Mattia; Ielmini, Daniele; I., Tortorelli; Redaelli, Andrea; Pirovano, Agostino; M., Allegra; M., Magistretti; C., Bresolin; D., Erbetta; A., Modelli; Varesi, Enrico; F., Pellizzer; Lacaita, ANDREA LEONARDO; R., Bez
Impact of Material Composition on the write performance of Phase-Change Memory Devices
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; M., Allegra
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY
2011-01-01 Boniardi, Mattia; Redaelli, Andrea; F., Pellizzer; Ielmini, Daniele; Pirovano, Agostino
Multiphysics modeling of PCM devices for scaling investigation
2010-01-01 G., Ferrari; A., Ghetti; Ielmini, Daniele; Redaelli, Andrea; Pirovano, Agostino
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface
2001-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; A., Pacelli; A., Benvenuti
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Ghidini; G., Tallarida
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations
2004-01-01 Gusmeroli, Riccardo; SOTTOCORNOLA SPINELLI, Alessandro; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; F., Boeuf; T., Skotnicki
Phase change memory device for multibit storage
2007-01-01 Redaelli, A.; Pirovano, A.; Pellizzer, F.
Reliability study of phase-change non-volatile memories.
2004-01-01 Pirovano, Agostino; Redaelli, Andrea; F., Pellizzer; F., Ottogalli; M., Tosi; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; R., Bez
Reversing a potential polarity for reading phase change cells to shorten a recovery delay after programming
2010-01-01 F., Pellizzer; Ielmini, Daniele; Pirovano, Agostino
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino