Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY
BONIARDI, MATTIA;REDAELLI, ANDREA;IELMINI, DANIELE;PIROVANO, AGOSTINO
2011-01-01
Abstract
Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.File in questo prodotto:
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