Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.

MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY

BONIARDI, MATTIA;REDAELLI, ANDREA;IELMINI, DANIELE;PIROVANO, AGOSTINO
2011

Abstract

Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/690270
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