PIROVANO, AGOSTINO

PIROVANO, AGOSTINO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

Mostra records
Risultati 1 - 15 di 15 (tempo di esecuzione: 0.016 secondi).
Titolo Data di pubblicazione Autori File
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 1-gen-2009 BONIARDI, MATTIAREDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELE +
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 1-gen-2008 REDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Anomalous cells with low resistance in phase change memory arrays 1-gen-2007 MANTEGAZZA, DAVIDEIELMINI, DANIELEPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO
Explaining the dependences of the hole and electron mobilities in Si inversion layers 1-gen-2000 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics 1-gen-2008 MANTEGAZZA, DAVIDEIELMINI, DANIELEPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 1-gen-2011 BONIARDI, MATTIAIELMINI, DANIELEREDAELLI, ANDREAPIROVANO, AGOSTINOVARESI, ENRICOLACAITA, ANDREA LEONARDO +
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface 1-gen-2001 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s 1-gen-2000 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations 1-gen-2004 GUSMEROLI, RICCARDOSOTTOCORNOLA SPINELLI, ALESSANDROPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Reliability study of phase-change non-volatile memories. 1-gen-2004 PIROVANO, AGOSTINOREDAELLI, ANDREAIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Thresold switching and phase transition numerical models for phase change memory simulations 1-gen-2008 REDAELLI, ANDREAPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Two-dimensional quantum effects in nanoscale MOSFETs 1-gen-2002 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO
Unified mechanisms for structure relaxation and crystallization in phase-change memory 1-gen-2009 IELMINI, DANIELEBONIARDI, MATTIALACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 1-gen-2016 AMBROGIO, STEFANOCIOCCHINI, NICOLALAUDATO, MARIOMILO, VALERIOPIROVANO, AGOSTINOFANTINI, PAOLOIELMINI, DANIELE