REDAELLI, ANDREA
REDAELLI, ANDREA
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
2009-01-01 Boniardi, Mattia; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; F., Pellizzer
A reliable technique for experimental evaluation of crystallization activation energy in PCMs
2008-01-01 Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; Lacaita, ANDREA LEONARDO
BEOL Process Effects on ePCM Reliability
2022-01-01 Redaelli, A; Gandolfo, A; Samanni, G; Gomiero, E; Petroni, E; Scotti, L; Lippiello, A; Mattavelli, P; Jasse, J; Codegoni, D; Serafini, A; Ranica, R; Boccaccio, C; Sandrini, J; Berthelon, R; Grenier, Jc; Weber, O; Turgis, D; Valery, A; Del Medico, S; Caubet, V; Reynard, Jp; Dutartre, D; Favennec, L; Conte, A; Disegni, F; De Tomasi, M; Ventre, A; Baldo, M; Ielmini, D; Maurelli, A; Ferreira, P; Arnaud, F; Piazza, F; Cappelletti, P; Annunziata, R; Gonella, R
Characterization of reset state through energy activation study in Ge-GST based ePCM
2022-01-01 Baldo, M; Turconi, L; Motta, A; Petroni, E; Laurin, L; Ielmini, D; Redaelli, A
Electronic switching effect and phase-change transition in chalcogenide materials
2004-01-01 Redaelli, Andrea; A., Pirovano; F., Pellizzer; Lacaita, ANDREA LEONARDO; Ielmini, Daniele; R., Bez
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
2011-01-01 Boniardi, Mattia; Ielmini, Daniele; I., Tortorelli; Redaelli, Andrea; Pirovano, Agostino; M., Allegra; M., Magistretti; C., Bresolin; D., Erbetta; A., Modelli; Varesi, Enrico; F., Pellizzer; Lacaita, ANDREA LEONARDO; R., Bez
Impact of Material Composition on the write performance of Phase-Change Memory Devices
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; M., Allegra
Interaction between forming pulse and integration process flow in ePCM
2022-01-01 Baldo, M; Petroni, E; Laurin, L; Samanni, G; Melnic, O; Ielmini, D; Redaelli, A
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time
2006-01-01 Redaelli, Andrea; Ielmini, Daniele; Russo, Ugo; Lacaita, ANDREA LEONARDO
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation
2006-01-01 Russo, Ugo; Ielmini, Daniele; Redaelli, Andrea; Lacaita, ANDREA LEONARDO
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories
2023-01-01 Baldo, M.; Melnic, O.; Scudieri, M.; Nicotra, G.; Borghi, M.; Petroni, E.; Motta, A.; Zuliani, P.; Laurin, L.; Redaelli, A.; Ielmini, D.
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells
2008-01-01 Redaelli, Andrea; Ielmini, Daniele; Russo, Ugo; Lacaita, ANDREA LEONARDO
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling
2008-01-01 Russo, Ugo; Ielmini, Daniele; Redaelli, Andrea; Lacaita, ANDREA LEONARDO
Modeling of programming and read performance in phase-change memories - Part II: Program disturb and mixed scaling approach
2008-01-01 U., Russo; Ielmini, Daniele; Redaelli, Andrea; Lacaita, ANDREA LEONARDO
Modeling of virgin state and forming operation in embedded phase change memory (PCM)
2020-01-01 Baldo, M.; Melnic, O.; Scuderi, M.; Nicotra, G.; Borghi, M.; Petroni, E.; Motta, A.; Zuliani, P.; Redaelli, A.; Ielmini, D.
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY
2011-01-01 Boniardi, Mattia; Redaelli, Andrea; F., Pellizzer; Ielmini, Daniele; Pirovano, Agostino
Multiphysics modeling of PCM devices for scaling investigation
2010-01-01 G., Ferrari; A., Ghetti; Ielmini, Daniele; Redaelli, Andrea; Pirovano, Agostino
Phase change memory device for multibit storage
2007-01-01 Redaelli, A.; Pirovano, A.; Pellizzer, F.
Reliability study of phase-change non-volatile memories.
2004-01-01 Pirovano, Agostino; Redaelli, Andrea; F., Pellizzer; F., Ottogalli; M., Tosi; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; R., Bez
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino