BONIARDI, MATTIA
BONIARDI, MATTIA
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
2009-01-01 Boniardi, Mattia; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; F., Pellizzer
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
2009-01-01 Ielmini, Daniele; Boniardi, Mattia
Electrical Conductivity Discontinuity at Melt in Phase Change Memory
2014-01-01 Crespi, Luca; A., Ghetti; Boniardi, Mattia; Lacaita, ANDREA LEONARDO
Energy landscape models for conduction and drift in PCM
2011-01-01 Ielmini, Daniele; Fugazza, Davide; Boniardi, Mattia
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
2011-01-01 Boniardi, Mattia; Ielmini, Daniele; I., Tortorelli; Redaelli, Andrea; Pirovano, Agostino; M., Allegra; M., Magistretti; C., Bresolin; D., Erbetta; A., Modelli; Varesi, Enrico; F., Pellizzer; Lacaita, ANDREA LEONARDO; R., Bez
Impact of Material Composition on the write performance of Phase-Change Memory Devices
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; M., Allegra
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
2010-01-01 Ielmini, Daniele; Fugazza, Davide; Boniardi, Mattia; Montemurro, GIUSEPPE VITO; Lacaita, ANDREA LEONARDO
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY
2011-01-01 Boniardi, Mattia; Redaelli, Andrea; F., Pellizzer; Ielmini, Daniele; Pirovano, Agostino
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures
2014-01-01 Boniardi, Mattia; A., Redaelli; C., Cupeta; F., Pellizzer; Crespi, Luca; G., D'Arrigo; Lacaita, ANDREA LEONARDO; G., Servalli
Physical origin of the resistance drift exponent in amorphous phase change materials
2011-01-01 Boniardi, Mattia; Ielmini, Daniele
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells
2013-01-01 Boniardi, Mattia; Redaelli, Andrea; A., Ghetti; Lacaita, ANDREA LEONARDO
Unified mechanisms for structure relaxation and crystallization in phase-change memory
2009-01-01 Ielmini, Daniele; Boniardi, Mattia; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino