AMBROGIO, STEFANO

AMBROGIO, STEFANO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 26 (tempo di esecuzione: 0.037 secondi).
Titolo Data di pubblicazione Autori File
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 1-gen-2015 WANG, ZHONGQIANGAMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP) 1-gen-2018 Milo V.Pedretti G.Carboni R.Ambrogio S.Ielmini D. +
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 1-gen-2015 AMBROGIO, STEFANOIELMINI, DANIELE +
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 1-gen-2016 Ambrogio, StefanoMilo, ValerioWang, ZhongqiangBalatti, SimoneIelmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONECHOI, SEOLIELMINI, DANIELE
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 1-gen-2017 Pedretti, G.Milo, V.Ambrogio, S.Carboni, R.Bianchi, S.Sottocornola Spinelli, A.Ielmini, D. +
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 1-gen-2018 Carboni, RobertoAmbrogio, StefanoIelmini, Daniele +
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 1-gen-2016 AMBROGIO, STEFANOBALATTI, SIMONEMILO, VALERIOCARBONI, ROBERTOIELMINI, DANIELE +
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Normally-off logic based on resistive switches - Part I: Logic gates 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 1-gen-2016 BALATTI, SIMONEAMBROGIO, STEFANOCARBONI, ROBERTOMILO, VALERIOWANG, ZHONGQIANGIELMINI, DANIELE +
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 1-gen-2016 Wang, ZhongqiangAmbrogio, StefanoBalatti, SimoneIelmini, Daniele +
Recommended Methods to Study Resistive Switching Devices 1-gen-2019 Ielmini, DanieleAmbrogio, StefanoLiu, MingLIU, QIPAVAN, PAOLOXU, JING +
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 1-gen-2013 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Spike-timing dependent plasticity in a transistor-selected resistive switching memory 1-gen-2013 AMBROGIO, STEFANOIELMINI, DANIELE +
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +