AMBROGIO, STEFANO
AMBROGIO, STEFANO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
2015-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)
2018-01-01 Milo, V.; Pedretti, G.; Carboni, R.; Calderoni, A.; Ramaswamy, N.; Ambrogio, S.; Ielmini, D.
Accelerated retention test method by controlling ion migration barrier of resistive random access memory
2015-01-01 Koo, Yunmo; Ambrogio, Stefano; Woo, Jiyong; Song, Jeonghwan; Ielmini, Daniele; Hwang, Hyunsang
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
2016-01-01 Ambrogio, Stefano; Milo, Valerio; Wang, Zhongqiang; Balatti, Simone; Ielmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Choi, Seol; Ielmini, Daniele
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity
2017-01-01 Pedretti, G.; Milo, V.; Ambrogio, S.; Carboni, R.; Bianchi, S.; Calderoni, A.; Ramaswamy, N.; Sottocornola Spinelli, A.; Ielmini, D.
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime
2018-01-01 Carboni, Roberto; Ambrogio, Stefano; Chen, Wei; Siddik, Manzar; Harms, Jon; Lyle, Andy; Kula, Witold; Sandhu, Gurtej; Ielmini, Daniele
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
2016-01-01 Ambrogio, Stefano; Balatti, Simone; Milo, Valerio; Carboni, Roberto; Wang, Zhong Qiang; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, Vincent; Wang, Daniel C.; Ielmini, Daniele
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, Vincent; Wang, Daniel C.; Ielmini, Daniele
Normally-off logic based on resistive switches - Part I: Logic gates
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
2016-01-01 Balatti, Simone; Ambrogio, Stefano; Carboni, Roberto; Milo, Valerio; Wang, Zhongqiang; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
2016-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Sills, Scott; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Recommended Methods to Study Resistive Switching Devices
2019-01-01 Lanza, Mario; Wong, H. -S. Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Köpe, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Suñe, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Xu, Jing; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
2013-01-01 Balatti, Simone; Ambrogio, Stefano; David C., Gilmer; Ielmini, Daniele
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
2013-01-01 Ambrogio, Stefano; S., Balatti; F., Nardi; S., Facchinetti; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele