AMBROGIO, STEFANO
AMBROGIO, STEFANO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
(Invited) Resistive Switching in Metal Oxides: From Physical Modeling to Device Scaling
2013-01-01 Ielmini, Daniele; Ambrogio, Stefano; S., Balatti
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
2015-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)
2018-01-01 Milo, V.; Pedretti, G.; Carboni, R.; Calderoni, A.; Ramaswamy, N.; Ambrogio, S.; Ielmini, D.
Accelerated retention test method by controlling ion migration barrier of resistive random access memory
2015-01-01 Koo, Yunmo; Ambrogio, Stefano; Woo, Jiyong; Song, Jeonghwan; Ielmini, Daniele; Hwang, Hyunsang
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
2016-01-01 Ambrogio, Stefano; Milo, Valerio; Wang, Zhongqiang; Balatti, Simone; Ielmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele; Gilmer, D. C.
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)
2015-01-01 Wang, Z. Q.; Ambrogio, Stefano; Balatti, Simone; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Data retention statistics and modelling in HfO2 resistive switching memories
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Wang, Zhong Qiang; Chen, Yu Sheng; Lee, Heng Yuan; Chen, Frederick T.; Ielmini, Daniele
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity
2016-01-01 Milo, V.; Pedretti, G.; Carboni, R.; Calderoni, A.; Ramaswamy, N.; Ambrogio, S.; Ielmini, D.
Device and method for generating radom numbers
2017-01-01 Ielmini, D.; Balatti, S.; Ambrogio, S.
Dispositivo e metodo per generare numeri casuali
2016-01-01 Ielmini, D.; Balatti, S.; Ambrogio, S.
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity
2015-01-01 Ielmini, D.; Ambrogio, S.; Balatti, S.; Wang, Z.
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses
2019-01-01 Bianchi, S.; Munoz-Martin, I.; Pedretti, G.; Melnic, O.; Ambrogio, S.; Ielmini, D.
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, V.; Wang, D.; Ielmini, Daniele
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Choi, Seol; Ielmini, Daniele
Intervalley scattering in monolayer MoS2 probed by non-equilibrium optical techniques
2015-01-01 DAL CONTE, Stefano; Bottegoni, Federico; Pogna, EVA ARIANNA AURELIA; De Fazio, D.; Ambrogio, Stefano; Bargigia, Ilaria; D'Andrea, Cosimo; Lombardo, A.; Bruna, M.; Ciccacci, Franco; Ferrari, A. C.; Cerullo, GIULIO NICOLA; Finazzi, Marco
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity
2017-01-01 Pedretti, G.; Milo, V.; Ambrogio, S.; Carboni, R.; Bianchi, S.; Calderoni, A.; Ramaswamy, N.; Sottocornola Spinelli, A.; Ielmini, D.
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime
2018-01-01 Carboni, Roberto; Ambrogio, Stefano; Chen, Wei; Siddik, Manzar; Harms, Jon; Lyle, Andy; Kula, Witold; Sandhu, Gurtej; Ielmini, Daniele
Neuromorphic computing with resistive switching memory devices
2019-01-01 Ielmini, Daniele; Ambrogio, Stefano