WANG, ZHONGQIANG

WANG, ZHONGQIANG  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.017 secondi).
Titolo Data di pubblicazione Autori File
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 1-gen-2015 WANG, ZHONGQIANGAMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 1-gen-2016 Ambrogio, StefanoMilo, ValerioWang, ZhongqiangBalatti, SimoneIelmini, Daniele
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition 1-gen-2018 Milo, ValerioWang, ZhongqiangIelmini, Daniele +
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 1-gen-2015 D. IelminiS. AmbrogioS. BalattiZ. Wang
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 1-gen-2016 Ambrogio, S.Balatti, S.Milo, V.Carboni, R.Wang, Z.Ielmini, D. +
Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse 1-gen-2022 Wang, ZhongqiangIelmini, Daniele +
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 1-gen-2016 BALATTI, SIMONEAMBROGIO, STEFANOCARBONI, ROBERTOMILO, VALERIOWANG, ZHONGQIANGIELMINI, DANIELE +
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 1-gen-2016 Wang, ZhongqiangAmbrogio, StefanoBalatti, SimoneIelmini, Daniele +
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOWANG, ZHONGQIANGIELMINI, DANIELE +