AMBROGIO, STEFANO
AMBROGIO, STEFANO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele; Gilmer, D. C.
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)
2015-01-01 Wang, Z. Q.; Ambrogio, Stefano; Balatti, Simone; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Data retention statistics and modelling in HfO2 resistive switching memories
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Wang, Zhong Qiang; Chen, Yu Sheng; Lee, Heng Yuan; Chen, Frederick T.; Ielmini, Daniele
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity
2016-01-01 Milo, V.; Pedretti, G.; Carboni, R.; Calderoni, A.; Ramaswamy, N.; Ambrogio, S.; Ielmini, D.
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses
2019-01-01 Bianchi, S.; Munoz-Martin, I.; Pedretti, G.; Melnic, O.; Ambrogio, S.; Ielmini, D.
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, V.; Wang, D.; Ielmini, Daniele
Intervalley scattering in monolayer MoS2 probed by non-equilibrium optical techniques
2015-01-01 DAL CONTE, Stefano; Bottegoni, Federico; Pogna, EVA ARIANNA AURELIA; De Fazio, D.; Ambrogio, Stefano; Bargigia, Ilaria; D'Andrea, Cosimo; Lombardo, A.; Bruna, M.; Ciccacci, Franco; Ferrari, A. C.; Cerullo, GIULIO NICOLA; Finazzi, Marco
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning
2016-01-01 Ambrogio, S.; Balatti, S.; Milo, V.; Carboni, R.; Wang, Z.; Calderoni, A.; Ramaswamy, N.; Ielmini, D.
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM)
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Z. Q.; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Statistical modeling of program and read variability in resistive switching devices
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, A.; Ielmini, Daniele
Ultrafast valley depolarization dynamics in monolayer MoS2
2016-01-01 DAL CONTE, Stefano; Bottegoni, Federico; Pogna, EVA ARIANNA AURELIA; De Fazio, D.; Ambrogio, Stefano; Bargigia, Ilaria; D'Andrea, Cosimo; Lombardo, A.; Bruna, M.; Ciccacci, Franco; Ferrari, A. C.; Cerullo, GIULIO NICOLA; Finazzi, Marco
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory
2016-01-01 Carboni, R.; Ambrogio, S.; Chen, W.; Siddik, M.; Harms, J.; Lyle, A.; Kula, W.; Sandhu, G.; Ielmini, D.
Understanding pulsed-cycling variability and endurance in HfOx RRAM
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Z. Q.; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Understanding switching variability and random telegraph noise in resistive RAM
2013-01-01 Ambrogio, Stefano; Balatti, Simone; A., Cubeta; A., Calderoni; N., Ramaswamy; Ielmini, Daniele
Variability and cycling endurance in nanoscale resistive switching memory
2015-01-01 Ielmini, Daniele; Balatti, Simone; Wang, Z. Q.; Ambrogio, Stefano
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop
2013-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele; D. C., Gilmer
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele