CHRASTINA, DANIEL
 Distribuzione geografica
Continente #
NA - Nord America 13.324
EU - Europa 3.531
AS - Asia 1.235
AF - Africa 30
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 7
OC - Oceania 4
Totale 18.139
Nazione #
US - Stati Uniti d'America 13.113
IT - Italia 799
AT - Austria 645
SG - Singapore 363
DE - Germania 350
UA - Ucraina 341
CN - Cina 338
VN - Vietnam 329
GB - Regno Unito 311
FI - Finlandia 305
SE - Svezia 253
CA - Canada 210
ES - Italia 165
IE - Irlanda 162
ID - Indonesia 51
FR - Francia 50
BE - Belgio 48
NL - Olanda 41
CH - Svizzera 36
JO - Giordania 34
JP - Giappone 33
TR - Turchia 25
IN - India 23
CI - Costa d'Avorio 14
GR - Grecia 11
KR - Corea 10
MU - Mauritius 10
EU - Europa 8
RU - Federazione Russa 6
TW - Taiwan 6
BJ - Benin 5
AU - Australia 4
BR - Brasile 4
HK - Hong Kong 3
LA - Repubblica Popolare Democratica del Laos 3
PH - Filippine 3
PL - Polonia 3
UZ - Uzbekistan 3
IL - Israele 2
IR - Iran 2
PE - Perù 2
PK - Pakistan 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
BD - Bangladesh 1
BO - Bolivia 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
KG - Kirghizistan 1
LT - Lituania 1
LV - Lettonia 1
NG - Nigeria 1
PT - Portogallo 1
SA - Arabia Saudita 1
TJ - Tagikistan 1
Totale 18.139
Città #
Fairfield 2.043
Woodbridge 1.466
Ann Arbor 1.191
Wilmington 1.124
Houston 1.012
Ashburn 972
Seattle 813
Chandler 702
Cambridge 675
Vienna 638
Santa Clara 495
Dearborn 273
Singapore 253
Jacksonville 246
Boardman 242
Lawrence 204
Ottawa 203
Medford 189
Milan 177
Dublin 160
Málaga 157
Dong Ket 141
Beijing 130
Helsinki 118
Des Moines 106
San Diego 93
Auburn Hills 77
London 64
Jakarta 51
Brussels 46
Amman 34
Leesburg 33
Redwood City 30
Bern 29
Norwalk 27
Amsterdam 25
Izmir 25
Washington 25
New York 24
Phoenix 24
Shanghai 23
Princeton 22
Bresso 21
Verona 19
Lucca 18
Mountain View 15
Abidjan 14
Falkenstein 14
Hefei 14
Munich 12
Rome 12
Columbus 10
Dallas 10
Frankfurt am Main 10
Los Angeles 10
Redmond 10
Kilburn 9
Livorno 9
Kunming 8
Nanjing 8
Portland 7
San Donato Milanese 7
Atlanta 6
Guangzhou 6
Hangzhou 6
Hounslow 6
Seregno 6
Albano Laziale 5
Brescia 5
Chicago 5
Cotonou 5
Fuzhou 5
Nürnberg 5
Seongnam 5
Bologna 4
Changsha 4
Chengdu 4
Chiswick 4
Falls Church 4
Nanchang 4
Pisa 4
Prescot 4
Rochester 4
Taipei 4
The Dalles 4
Turin 4
Bangalore 3
Como 3
Delhi 3
Dronten 3
Fremont 3
Glasgow 3
Hollywood 3
Lappeenranta 3
Longueuil 3
Manila 3
Miami 3
New Delhi 3
Simi Valley 3
São Paulo 3
Totale 14.774
Nome #
Emission engineering in germanium nanoresonators 190
X-Ray Nano-Diffraction on Epitaxial Crystals 167
Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy 163
Tuning of Electrical and Optical Properties of Highly Conducting and Transparent Ta-Doped TiO2 Polycrystalline Films 159
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching 156
Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction 156
An experimental and theoretical investigation of a magnetically confined dc plasma discharge 149
(Invited) Three-Dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates 148
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates 144
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 144
Spin polarized photoemission from strained Ge epilayers grown by low-energy plasma-enhanced CVD (LEPECVD) 138
Electro-refraction in standard and symmetrically coupled Ge/SiGe quantum wells 133
Strain in Si or Ge from the edge forces of epitaxial nanostructures 132
Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication 131
2-D Hole Gas with Two-Subband Occupation in a Strained Ge Channel: Scattering Mechanisms 131
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments 130
Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction 128
Ge/Si (100) heterojunction photodiodes fabricated from material grown by low energy plasma enhanced chemical vapour deposition 123
23 GHz Ge/SiGe multiple quantum well electro-absorption modulator 123
Top–down SiGe nanostructures on Ge membranes realized by e-beam lithography and wet etching 122
Tensile strain in Ge membranes induced by SiGe nanostressors 122
Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates 122
Ordered Arrays of SiGe Islands from Low-Energy PECVD 121
Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates 120
10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector 119
Positron annihilation studies of defects in Si1-xGex/SOI heterostructures 118
Scaling hetero-epitaxy from layers to three-dimensional crystals 118
Analysis of enhanced light emission from highly strained germanium microbridges 118
Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure 117
Emission engineering in germanium nanoresonators 117
Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides 116
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 116
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 114
Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition 114
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition 113
Holes in germanium quantum wells: spin relaxation and temperature dynamics 113
Epitaxial Ge-crystal arrays for X-ray detection 113
1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates 112
Logic gates with a single Hall bar heterostructure 112
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells 111
Ge/SiGe Superlattices for Nanostructured Thermoelectric Modules 111
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 110
Elastic strain relief in a single lithographic SiGe nanostructure by nanobeam X-ray diffraction 110
Integrated germanium optical interconnects on silicon substrates 109
Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells 108
Si/SiGe Nanoscale Engineered Thermoelectric Materials for Energy Harvesting 108
Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices 107
Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain 106
Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics 105
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition 104
Perfect crystals grown from imperfect interfaces 104
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 104
Ge/SiGe superlattices for thermoelectric energy conversion devices 103
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 102
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 102
Probing the in-plane electron spin polarization in Ge/ Si0.15Ge0.85 multiple quantum wells 102
Strain release management in SiGe/Si films by substrate patterning 101
Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules 101
Ultrafast transient gain in Ge/SiGe quantum wells 100
Ge/SiGe heterostructures as emitters of polarized electrons 99
Thermal Conductivity Measurement Methods for SiGe Thermoelectric Materials 99
Ge quantum-well waveguide modulator at 1.3μm 99
Ge/SiGe quantum wells structures for optical modulation 98
Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics 97
Lithographically defined low dimensional SiGe nanostripes as silicon stressors 97
Threshold ionization mass spectrometry in the presence of excited silane radicals 96
High Extinction Ratio, Low Energy Ge Quantum Well Electro-Absorption Modulator with 23 GHz Bandwidth 96
Optical spin injection in SiGe heterostructures 95
Excess carrier lifetimes in Ge layers on Si 95
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 94
Gate-controlled rectifying barrier in a two-dimensional hole gas 94
Advances towards the demonstration of a Ge/SiGe modulator integrated on SOI 94
Direct gap related optical transitions in Ge/SiGe quantum wells 93
Spin-polarized photoemission from SiGe heterostructures 93
3D heteroepitaxy of mismatched semiconductors on silicon 92
Strain-induced band gap narrowing in Ge-rich SiGe nano-stripes. 92
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs 92
Controlling the polarization dynamics by strong THz fields in photoexcited germanium quantum wells 91
Defect analysis of hydrogenated nanocrystalline Si thin films 90
Vertical arrays of nanofluidic channels fabricated without nanolithography 90
An Investigation Of The Gas Phase And Surface Chemistry Active During The Pecvd Of Nc-Silicon: A Detailed Model Of The Gas Phase And Surface Chemistry 90
Broadband single mode SiGe graded waveguides with tight mode confinement for mid-infrared photonics 90
Power Factor Characterization of Ge/SiGe Thermoelectric Superlattices at 300 K 90
Measurement of carrier lifetime and interface recombination velocity in Si-Ge waveguides 89
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures 89
30 GHz Ge/SiGe multiple quantum well photodiode 89
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs 88
Langmuir probe plasma parameters and kinetic rates in a Ar-SiH4-H-2 plasma during nc-Si films deposition for photovoltaic applications 88
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime 88
Strained Si HFETs for microwave applications: state-of-the-art and further approaches 87
The thermoelectric properties of Ge/SiGe modulation doped superlattices 87
High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells 87
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices 86
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 86
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 86
Measurement of lifetime of photo-generated free carriers in SiGe waveguides 84
Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate 84
Giant dynamical Stark shift in germanium quantum wells 84
Prospects for SiGe thermoelectric generators 83
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 83
Totale 10.914
Categoria #
all - tutte 62.496
article - articoli 45.189
book - libri 0
conference - conferenze 17.006
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 301
Totale 124.992


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.490 0 0 0 0 0 0 561 421 508 466 377 157
2020/20212.052 217 145 146 116 151 96 152 179 115 191 147 397
2021/20221.820 39 243 187 164 106 75 115 126 107 114 192 352
2022/20231.897 243 129 86 102 185 245 16 172 294 189 124 112
2023/20241.023 59 199 48 95 70 131 77 40 7 147 14 136
2024/20251.270 23 28 110 139 658 302 10 0 0 0 0 0
Totale 18.352