The current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 104 is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.
Gate-controlled rectifying barrier in a two-dimensional hole gas
SORDAN, ROMAN;MIRANDA, ALESSIO MASSIMILIA;OSMOND, JOHANN;CHRASTINA, DANIEL;ISELLA, GIOVANNI;
2008-01-01
Abstract
The current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 104 is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.File in questo prodotto:
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