| Nome |
# |
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Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules, file e0c31c0d-df5d-4599-e053-1705fe0aef77
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316
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Excess carrier lifetimes in Ge layers on Si, file e0c31c08-1f33-4599-e053-1705fe0aef77
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249
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Engineering of the spin on dopant process on silicon on insulator substrate, file e0c31c10-38ab-4599-e053-1705fe0aef77
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224
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O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning, file e0c31c08-2437-4599-e053-1705fe0aef77
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221
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X-Ray Nano-Diffraction on Epitaxial Crystals, file e0c31c0a-8e0d-4599-e053-1705fe0aef77
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214
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Study and optimization of epitaxial films of Cr and Pt/Cr bilayers on MgO, file e0c31c0f-26b3-4599-e053-1705fe0aef77
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213
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Ge/SiGe parabolic quantum wells, file e0c31c0e-7f0c-4599-e053-1705fe0aef77
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202
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Tuning of Electrical and Optical Properties of Highly Conducting and Transparent Ta-Doped TiO2 Polycrystalline Films, file e0c31c08-4e06-4599-e053-1705fe0aef77
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201
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Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties, file e0c31c08-1c1c-4599-e053-1705fe0aef77
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199
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Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction, file e0c31c08-159a-4599-e053-1705fe0aef77
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198
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Strain release management in SiGe/Si films by substrate patterning, file e0c31c08-254f-4599-e053-1705fe0aef77
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197
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Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures, file e0c31c08-8d57-4599-e053-1705fe0aef77
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196
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Thin SiGe virtual substrates for Ge heterostructures integration on silicon, file e0c31c08-1799-4599-e053-1705fe0aef77
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194
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Germanium-based integrated photonics from near- to mid-infrared applications, file e0c31c0c-779d-4599-e053-1705fe0aef77
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193
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Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates, file e0c31c08-1c19-4599-e053-1705fe0aef77
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177
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Scattering mechanisms in high-mobility strained-Ge channels, file e0c31c0b-31df-4599-e053-1705fe0aef77
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177
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Tensile strain in Ge membranes induced by SiGe nanostressors, file e0c31c09-d683-4599-e053-1705fe0aef77
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176
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Integrated germanium optical interconnects on silicon substrates, file e0c31c0d-f446-4599-e053-1705fe0aef77
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173
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Effective g factor of 2D holes in strained Ge quantum wells, file e0c31c0b-e100-4599-e053-1705fe0aef77
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166
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Si/Sige quantum cascade superlattice designs for terahertz emission, file e0c31c0b-31e7-4599-e053-1705fe0aef77
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164
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A singlet-triplet hole spin qubit in planar Ge, file e0c31c11-36b0-4599-e053-1705fe0aef77
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160
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Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers, file e0c31c0b-39de-4599-e053-1705fe0aef77
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153
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Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices, file e0c31c08-28b3-4599-e053-1705fe0aef77
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152
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Determination of Raman efficiency in SiGe alloys, file e0c31c0b-3243-4599-e053-1705fe0aef77
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150
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Probing the in-plane electron spin polarization in Ge/
Si0.15Ge0.85
multiple quantum wells, file e0c31c0f-9208-4599-e053-1705fe0aef77
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140
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Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics, file e0c31c0a-5862-4599-e053-1705fe0aef77
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129
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Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling, file e0c31c09-a97d-4599-e053-1705fe0aef77
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125
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Raman spectroscopy of epitaxial InGaN/Si in the central composition range, file e0c31c0d-a0c6-4599-e053-1705fe0aef77
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120
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Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors, file e0c31c08-4dd1-4599-e053-1705fe0aef77
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115
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Giant electro-optic effect in Ge/SiGe coupled quantum wells, file e0c31c08-b364-4599-e053-1705fe0aef77
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113
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Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics, file e0c31c0f-10d7-4599-e053-1705fe0aef77
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113
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Electro-refraction in standard and symmetrically coupled Ge/SiGe quantum wells, file e0c31c0c-3d16-4599-e053-1705fe0aef77
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109
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Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors, file e0c31c0c-3f24-4599-e053-1705fe0aef77
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106
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High energy pulsed laser deposition of ohmic tungsten contacts on silicon at room temperature, file e0c31c0d-1618-4599-e053-1705fe0aef77
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100
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Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges, file e0c31c08-18c6-4599-e053-1705fe0aef77
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93
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Prospects for SiGe thermoelectric generators, file e0c31c0d-3338-4599-e053-1705fe0aef77
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79
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Mid-infrared sensing between 5.2 and 6.6 μm wavelengths using Ge-rich SiGe waveguides [Invited], file e0c31c0b-e102-4599-e053-1705fe0aef77
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73
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A singlet-triplet hole spin qubit in planar Ge, file e0c31c11-36b1-4599-e053-1705fe0aef77
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70
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Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects, file e0c31c0c-e1b2-4599-e053-1705fe0aef77
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67
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Design and simulation of waveguide-integrated Ge/SiGe quantum-confined Stark effect optical modulator based on adiabatic coupling with SiGe waveguide, file e0c31c10-9ba7-4599-e053-1705fe0aef77
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62
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Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm, file e0c31c0d-95b1-4599-e053-1705fe0aef77
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61
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Structural investigations of the alpha(12) Si-Ge superstructure, file e0c31c08-239a-4599-e053-1705fe0aef77
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59
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, file e0c31c10-e612-4599-e053-1705fe0aef77
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55
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Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control, file 4cd94502-5764-49f3-8bc7-b04945672ad1
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45
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Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments, file e0c31c09-f452-4599-e053-1705fe0aef77
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39
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Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching, file e0c31c0d-f911-4599-e053-1705fe0aef77
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38
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Recent progress in GeSi electro-absorption modulators, file e0c31c0d-50d4-4599-e053-1705fe0aef77
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36
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, file e0c31c10-c4b0-4599-e053-1705fe0aef77
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36
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Tailoring of embedded dielectric alumina film in AlGaAs epilayer by selective thermal oxidation, file e0c31c12-4dfd-4599-e053-1705fe0aef77
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35
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Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, file e0c31c0d-b8cd-4599-e053-1705fe0aef77
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32
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Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication, file e0c31c0e-3336-4599-e053-1705fe0aef77
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28
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Dynamics of Hole Singlet-Triplet Qubits with Large g-Factor Differences, file e0c31c12-7d9c-4599-e053-1705fe0aef77
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26
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Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, file e0c31c0d-bab5-4599-e053-1705fe0aef77
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21
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Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics, file e0c31c12-4428-4599-e053-1705fe0aef77
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19
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Epitaxy and controlled oxidation of chromium ultrathin films on ferroelectric BaTiO3 templates, file 13dc5ea5-f70c-4b7c-9ed3-08d14376efff
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15
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Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets, file 881b4233-b079-4242-a88d-0b30c76c7c7a
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12
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Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy, file b5e5dfa9-2e8f-43fa-beb3-c9955e7b61b2
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9
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Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime, file e0c31c0f-2251-4599-e053-1705fe0aef77
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8
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Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime, file e0c31c0b-da4c-4599-e053-1705fe0aef77
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5
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Epitaxy and controlled oxidation of chromium ultrathin films on ferroelectric BaTiO3 templates, file e0c31c10-db01-4599-e053-1705fe0aef77
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5
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Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, file e0c31c08-2439-4599-e053-1705fe0aef77
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4
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Emission engineering in germanium nanoresonators, file e0c31c08-244a-4599-e053-1705fe0aef77
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4
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Recent progress in GeSi electro-absorption modulators, file e0c31c08-18c5-4599-e053-1705fe0aef77
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3
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Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules, file e0c31c08-23d2-4599-e053-1705fe0aef77
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3
|
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Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm, file e0c31c08-179a-4599-e053-1705fe0aef77
|
2
|
|
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, file e0c31c08-1c1a-4599-e053-1705fe0aef77
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2
|
|
Integrated germanium optical interconnects on silicon substrates, file e0c31c08-1c1f-4599-e053-1705fe0aef77
|
2
|
|
Emission engineering in germanium nanoresonators, file e0c31c08-1dcf-4599-e053-1705fe0aef77
|
2
|
|
Prospects for SiGe thermoelectric generators, file e0c31c08-243b-4599-e053-1705fe0aef77
|
2
|
|
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments, file e0c31c09-3360-4599-e053-1705fe0aef77
|
2
|
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Vertical Germanium Nanowire Photodetectors with Suspended Graphene Top Contact, file e0c31c0a-45bd-4599-e053-1705fe0aef77
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2
|
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Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium, file 4a669e67-e451-46cc-a5fc-38aaeafc6b8e
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1
|
|
Tuning of Electrical and Optical Properties of Highly Conducting and Transparent Ta-Doped TiO2 Polycrystalline Films, file e0c31c07-beca-4599-e053-1705fe0aef77
|
1
|
|
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching, file e0c31c07-befd-4599-e053-1705fe0aef77
|
1
|
|
Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication, file e0c31c07-befe-4599-e053-1705fe0aef77
|
1
|
|
Optical interconnects based on Ge/SiGe multiple quantum well structures, file e0c31c09-3557-4599-e053-1705fe0aef77
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1
|
| Totale |
6.896 |