Sfoglia per Autore
Reduced self-heating in Si/SiGe field-effect RF transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition
2003-01-01 T., Hackbarth; H. J., Herzog; K. H., Hieber; U., Koenig; Bollani, Monica; Chrastina, Daniel; H., VON KAENEL
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs
2003-01-01 P., Abele; M., Zeuner; Chrastina, Daniel; T., Hackbarth; J., Kallfass; U., Konig; H., Laban Hiwilepo; J., Mueller; H., Schumacher; H., Von Kaenel
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs
2003-01-01 P., Abele; M., Zeuner; I., Kallfass; J., Mueller; H., LABAN HIWILEPO; T., Hackbarth; Chrastina, Daniel; H., VON KAENEL; U., Koenig; H., Schumacher
Scattering mechanisms in high-mobility strained-Ge channels
2004-01-01 B., Roessner; Chrastina, Daniel; Isella, Giovanni; H., VON KAENEL
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition
2004-01-01 Chrastina, Daniel; Isella, Giovanni; B., Roessner; Bollani, Monica; E., Mueller; T., Hackbarth; H., VON KAENEL
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature
2004-01-01 A., Marzegalli; F., Montalenti; M., Bollani; Leo, Miglio; Isella, Giovanni; Chrastina, Daniel; H., VON KAENEL
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition
2004-01-01 VON KÄNEL, Hans; Chrastina, Daniel; B., Roessner; Isella, Giovanni; J. P., Hague; Bollani, Monica
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
2004-01-01 M., ENCISO AGUILAR; M., Rodriguez; N., Zerouinian; F., Aniel; T., Hackbarth; H. J., Herzog; U., Koenig; S., Mantl; B., Hollaender; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans; K., Lyyutovich; M., Oehme
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
2004-01-01 Isella, Giovanni; Chrastina, Daniel; B., Rossner; T., Hackbarth; H. J., Herzog; U., Konig; VON KÄNEL, Hans
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
2004-01-01 L., Martinelli; A., Marzegalli; P., Raiteri; Bollani, Monica; F., Montalenti; L., Miglio; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
Electron-electron interaction in p-SiGe/Ge quantum wells
2005-01-01 B., Batlogg; Chrastina, Daniel; Isella, Giovanni; B., Roessner; H., Von Kaenel
LEPECVD - a production technique for SiGe MOSFETs and MODFETs
2005-01-01 Chrastina, Daniel; T., Hackbarth; C., Hague; H., Herzog; K., Hieber; Isella, Giovanni; U., Koenig; B., Roessner; H., Von Kaenel
Raman spectroscopy of Si1-xGex epilayers
2005-01-01 G., Bauer; J., Stangl; H., Von Kaenel; E., Wintersberger; Bollani, Monica; Chrastina, Daniel; E., Grilli; M., Guzzi; Isella, Giovanni; L., Martinelli; F., Pezzoli; S., Sanguinetti
Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition
2005-01-01 Chrastina, Daniel; Isella, Giovanni; Bollani, Monica; B., Rössner; E., Müller; T., Hackbarth; E., Wintersberger; Z., Zhong; J., Stangl; H., von Känel
Raman spectroscopy of Si1−xGex epilayers
2005-01-01 F., Pezzoli; L., Martinelli; E., Grilli; M., Guzzi; S., Sanguinetti; Bollani, Monica; Chrastina, Daniel; Isella, Giovanni; H., von Känel; E., Wintersberger; J., Stangl; G., Bauer
Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells
2006-01-01 S., Tsujino; H., Sigg; G., Mussler; Chrastina, Daniel; H., VON KAENEL
Logic gates with a single Hall bar heterostructure
2006-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
2006-01-01 R., Ginige; B., Corbett; M., Modreanu; C., Barrett; J., Hilgarth; Isella, Giovanni; Chrastina, Daniel; VON KÄNEL, Hans
2-D Hole Gas with Two-Subband Occupation in a Strained Ge Channel: Scattering Mechanisms
2006-01-01 Roessner, B.; VON KÄNEL, Hans; Chrastina, Daniel; Isella, Giovanni; Batlogg, B.
Strain-induced shift of phonon modes in Si1-xGex alloys
2006-01-01 F., Pezzoli; E., Grilli; M., Guzzi; S., Sanguinetti; Chrastina, Daniel; Isella, Giovanni; H., VON KAENEL; E., Wintersberger; J., Stangl; G., Bauer
Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures
2006-01-01 B., Roessner; B., Batlogg; H., VON KAENEL; Chrastina, Daniel; Isella, Giovanni
Measurement of carrier lifetime and interface recombination velocity in Si-Ge waveguides
2007-01-01 Chrastina, Daniel; I., Cristiani; V., Degiorgio; A., Trita; H., Von Kaenel
Measurement of lifetime of photo-generated free carriers in SiGe waveguides
2007-01-01 Chrastina, Daniel; I., Cristiani; V., Degiorgio; M., Doebeli; A., Trita; H., Von Kaenel
Defect analysis of hydrogenated nanocrystalline Si thin films
2007-01-01 A., Cavallini; D., Cavalcoli; M., Rossi; A., Tomasi; S., Pizzini; Chrastina, Daniel; Isella, Giovanni
Effective mass measurement: influence of hole band non parabolicity in SiGe/Ge quantum wells
2007-01-01 B., Batlogg; Chrastina, Daniel; Isella, Giovanni; B., Roessner; H., Von Kaenel
SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity
2008-01-01 M., Stoffel; A., Malachias; T., Merdzhanova; F., Cavallo; Isella, Giovanni; Chrastina, Daniel; H., VON KÄNEL; A., Rastelli; O. G., Schmidt
Ge/Si (100) heterojunction photodiodes fabricated from material grown by low energy plasma enhanced chemical vapour deposition
2008-01-01 Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; R., Kaufmann; H., VON KÄNEL
An experimental and theoretical investigation of a magnetically confined dc plasma discharge
2008-01-01 Rondanini, Maurizio; Cavallotti, CARLO ALESSANDRO; D., Ricci; Chrastina, Daniel; Isella, Giovanni; Moiseev, Tamara; VON KÄNEL, Hans
Gate-controlled rectifying barrier in a two-dimensional hole gas
2008-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; D., Colombo; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL
High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage
2008-01-01 Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; R., Kaufmann; H., VON KANEL
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
2008-01-01 M., Bonfanti; E., Grilli; M., Guzzi; M., Virgilio; G., Grosso; Chrastina, Daniel; Isella, Giovanni; H., VON KAENEL; A., Neels
RAMAN SPECTROSCOPY DETERMINATION OF COMPOSITION AND STRAIN IN SI1-XGEX/SI HETEROSTRUCTURES
2008-01-01 F., Pezzoli; E., Bonera; E., Grilli; M., Guzzi; S., Sanguinetti; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL; E., Wintersberger; J., Stangl; G., Bauer
Si/SiGe Bound-to-Continuum Quantum Cascade Emitters
2008-01-01 D. J., Paul; G., Matmon; L., Lever; Z., Ikonic; R., Kelsall; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL; E. MÜLLER: A., Neels
Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy
2008-01-01 D., Cavalcoli; M., Rossi; A., Tomasi; A., Cavallini; Chrastina, Daniel; Isella, Giovanni
ESiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD
2008-01-01 Isella, Giovanni; G., Matmon; A., Neels; E., Muller; M., Califano; Chrastina, Daniel; H., VON KANEL; L., Lever; Z., Ikonic; R. W., Kelsall; D. J., Paul
Phonon strain shift coefficients in Si1−xGex alloys
2008-01-01 F., Pezzoli; E., Bonera; E., Grilli; M., Guzzi; S., Sanguinetti; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL; E., Wintersberger; J., Stangl; G., Bauer
Epitaxial Si-Ge Heterostructures and Nanostructures for Optical and Electrical Applications
2008-01-01 H., VON KÄNEL; M., Bollani; M., Bonfanti; Chrastina, Daniel; D., Colombo; A., Dommann; M., Guzzi; Isella, Giovanni; Miranda, ALESSIO MASSIMILIA; E., Müller; A., Neels; Osmond, Johann; B., Rössner; Sordan, Roman; F., Traversi
Si/SiGe bound-to-continuum quantum cascade terahertz emitters
2008-01-01 D. J., Paul; G., Matmon; L., Lever; Z., Ikoni; R. W., Kelsall; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL
Ge/SiGe multiple quantum wells for optical applications
2008-01-01 Chrastina, Daniel; A., Neels; M., Bonfanti; M., Virgilio; Isella, Giovanni; E., Grilli; M., Guzzi; G., Grosso; H., Sigg; H., VON KAENEL
An Investigation Of The Gas Phase And Surface Chemistry Active During The Pecvd Of Nc-Silicon: A Detailed Model Of The Gas Phase And Surface Chemistry
2009-01-01 Cavallotti, CARLO ALESSANDRO; Rondanini, Maurizio; Moiseev, Tamara; Chrastina, Daniel; Isella, Giovanni
Threshold ionization mass spectrometry in the presence of excited silane radicals
2009-01-01 Moiseev, Tamara; Chrastina, Daniel; Isella, Giovanni; Cavallotti, CARLO ALESSANDRO
Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides
2009-01-01 A., Trita; F., Bragheri; I., Cristiani; V., Degiorgio; Chrastina, Daniel; Colombo, Davide; Isella, Giovanni; H., Von Kaenel; F., Gramm; E., Muueller; M., Doebeli
Direct gap related optical transitions in Ge/SiGe quantum wells
2009-01-01 M., Bonfanti; E., Grilli; M., Guzzi; Chrastina, Daniel; Isella, Giovanni; H., von Kaenel; H., Sigg
Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H
2009-01-01 E., Poliani; C., Somaschini; S., Sanguinetti; E., Grilli; M., Guzzi; A., Le Donne; S., Binetti; Chrastina, Daniel; Isella, Giovanni
Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate
2009-01-01 S., Bietti; S., Sanguinetti; C., Somaschini; N., Koguchi; Isella, Giovanni; Chrastina, Daniel; A., Fedorov
Langmuir probe plasma parameters and kinetic rates in a Ar-SiH4-H-2 plasma during nc-Si films deposition for photovoltaic applications
2009-01-01 Moiseev, Tamara; Isella, Giovanni; Chrastina, Daniel; Cavallotti, CARLO ALESSANDRO
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
2009-01-01 C., Lange; N. S., Koester; S., Chatterjee; H., Sigg; Chrastina, Daniel; Isella, Giovanni; H., Von Kaenel; M., Schaefer; M., Kira; S. W., Koch
Raman Spectroscopy for the Analysis of Temperature-Dependent Plastic Relaxation of SiGe Layers
2009-01-01 F., Pezzoli; E., Bonera; M., Bollani; S., Sanguinetti; E., Grilli; M., Guzzi; Isella, Giovanni; Chrastina, Daniel; H., Von Kaenel
Positron annihilation studies of defects in Si1-xGex/SOI heterostructures
2009-01-01 Calloni, Alberto; Ferragut, RAFAEL OMAR; Moia, Fabio; Dupasquier, Alfredo; Isella, Giovanni; D., Marongiu; Norga, GERD JOHAN MARIA; A., Fedorov; Chrastina, Daniel
Raman Spectroscopy for the Analysis οf Temperature Dependent Plastic Relaxation οf SiGe Layers
2009-01-01 F., Pezzoli; E., Bonera; Bollani, Monica; S., Sanguinetti; E., Grilli; M., Guzzi; Isella, Giovanni; Chrastina, Daniel; H., von Känel
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