AMBROSI, ELIA
AMBROSI, ELIA
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A volatile RRAM synapse for neuromorphic computing
2019-01-01 Covi, E.; Ielmini, D.; Lin, Y. -H.; Wang, W.; Stecconi, T.; Milo, V.; Bricalli, A.; Ambrosi, E.; Pedretti, G.; Tseng, T. -Y.
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)
2021-01-01 Pedretti, G.; Ambrosi, E.; Ielmini, D.
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion
2019-01-01 Ambrosi, E.; Bartlett, P.; Berg, A. I.; Brivio, S.; Burr, G.; Deswal, S.; Deuermeier, J.; Haga, M. -A.; Kiazadeh, A.; Kissling, G.; Kozicki, M.; Foroutan-Nejad, C.; Gale, E.; Gonzalez-Velo, Y.; Goossens, A.; Goux, L.; Hasegawa, T.; Hilgenkamp, H.; Huang, R.; Ibrahim, S.; Ielmini, D.; Kenyon, A. J.; Kolosov, V.; Li, Y.; Majumdar, S.; Milano, G.; Prodromakis, T.; Raeishosseini, N.; Rana, V.; Ricciardi, C.; Santamaria, M.; Shluger, A.; Valov, I.; Waser, R.; Stanley Williams, R.; Wouters, D.; Yang, Y.; Zaffora, A.
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
2019-01-01 Ambrosi, E.; Bricalli, A.; Laudato, M.; Ielmini, D.
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories
2020-01-01 Sun, Zhong; Ambrosi, Elia; Pedretti, Giacomo; Bricalli, Alessandro; Ielmini, Daniele
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices
2020-01-01 Sun, Z.; Pedretti, G.; Ambrosi, E.; Bricalli, A.; Ielmini, D.
In‐Memory Eigenvector Computation in Time O (1)
2020-01-01 Sun, Zhong; Pedretti, Giacomo; Ambrosi, Elia; Bricalli, Alessandro; Ielmini, Daniele
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage
2019-01-01 Polino, NICOLA FRANCESCO; Laudato, M.; Ambrosi, E.; Bricalli, A.; Ielmini, D.
Logic Computing with Stateful Neural Networks of Resistive Switches
2018-01-01 Sun, Zhong; Ambrosi, Elia; Bricalli, Alessandro; Ielmini, Daniele
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion
2019-01-01 Wang, W.; Covi, E.; Lin, Y. -H.; Ambrosi, E.; Ielmini, D.
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
2019-01-01 Wang, W.; Bricalli, A.; Laudato, M.; Ambrosi, E.; Covi, Erika; Ielmini, D.
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices
2017-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
2018-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
2018-01-01 Milo, Valerio; Pedretti, Giacomo; Laudato, M.; Bricalli, Alessandro; Ambrosi, Elia; Bianchi, Stefano; Chicca, Elisabetta; Ielmini, D.
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
2018-01-01 Mehonic, A.; Shluger, A. L.; Gao, D.; Valov, I.; Miranda, E.; Ielmini, D.; Bricalli, A.; Ambrosi, E.; Li, C.; Yang, J. J.; Xia, Q.; Kenyon, A. J.
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
2016-01-01 Bricalli, A.; Ambrosi, E.; Laudato, M.; Maestro, M.; Rodriguez, R.; Ielmini, D.
Solving matrix equations in one step with cross-point resistive arrays
2019-01-01 Sun, Z.; Pedretti, G.; Ambrosi, E.; Bricalli, A.; Wang, W.; Ielmini, D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
2019-01-01 Wang, W.; Wang, M.; Ambrosi, E.; Bricalli, A.; Laudato, M.; Sun, Z.; Chen, X.; Ielmini, D.
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization
2021-01-01 Covi, E.; Wang, W.; Lin, Y.; Farronato, M.; Ambrosi, E.; Ielmini, D.
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling
2021-01-01 Wang, W.; Covi, E.; Lin, Y.; Ambrosi, E.; Milozzi, A.; Sbandati, C.; Farronato, M.; Ielmini, D.