AMBROSI, ELIA

AMBROSI, ELIA  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Titolo Data di pubblicazione Autori File
A volatile RRAM synapse for neuromorphic computing 1-gen-2019 Covi E.Ielmini D.Wang W.Stecconi T.Milo V.Bricalli A.Ambrosi E.Pedretti G. +
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) 1-gen-2021 Pedretti G.Ambrosi E.Ielmini D.
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion 1-gen-2019 Ambrosi E.Ielmini D.Zaffora A. +
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 1-gen-2019 Ambrosi E.Bricalli A.Laudato M.Ielmini D.
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 1-gen-2020 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Ielmini D.
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 1-gen-2019 POLINO, NICOLA FRANCESCOLaudato M.Ambrosi E.Bricalli A.Ielmini D.
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 1-gen-2019 Wang W.Covi E.Ambrosi E.Ielmini D. +
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 1-gen-2019 Wang W.Bricalli A.Laudato M.Ambrosi E.COVI, ERIKAIelmini D.
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 1-gen-2018 MILO, VALERIOPEDRETTI, GIACOMOLaudato, M.BRICALLI, ALESSANDROAMBROSI, ELIABIANCHI, STEFANOCHICCA, ELISABETTAIelmini, D.
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 1-gen-2016 Bricalli, A.Ambrosi, E.Laudato, M.Ielmini, D. +