BALATTI, SIMONE
BALATTI, SIMONE
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
2015-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
2016-01-01 Ambrogio, Stefano; Milo, Valerio; Wang, Zhongqiang; Balatti, Simone; Ielmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Complementary switching in oxide-based bipolar resistive switching memory (RRAM)
2013-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012-01-01 Ielmini, Daniele; Nardi, Federico; Balatti, Simone
Filament evolution during resistive switching in oxide RRAM
2013-01-01 Ielmini, Daniele; Balatti, Simone; S., Larentis
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Choi, Seol; Ielmini, Daniele
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
2013-01-01 Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
2016-01-01 Ambrogio, Stefano; Balatti, Simone; Milo, Valerio; Carboni, Roberto; Wang, Zhong Qiang; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, Vincent; Wang, Daniel C.; Ielmini, Daniele
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, Vincent; Wang, Daniel C.; Ielmini, Daniele
Normally-off logic based on resistive switches - Part I: Logic gates
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
2016-01-01 Balatti, Simone; Ambrogio, Stefano; Carboni, Roberto; Milo, Valerio; Wang, Zhongqiang; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
2016-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Sills, Scott; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
2012-01-01 Nardi, Federico; S., Larentis; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D., Gilmer; Ielmini, Daniele
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
2013-01-01 Balatti, Simone; Ambrogio, Stefano; David C., Gilmer; Ielmini, Daniele
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele