BALATTI, SIMONE

BALATTI, SIMONE  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 23 (tempo di esecuzione: 0.05 secondi).
Titolo Data di pubblicazione Autori File
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 1-gen-2015 WANG, ZHONGQIANGAMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 1-gen-2016 Ambrogio, StefanoMilo, ValerioWang, ZhongqiangBalatti, SimoneIelmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 1-gen-2013 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 1-gen-2012 IELMINI, DANIELENARDI, FEDERICOBALATTI, SIMONE
Filament evolution during resistive switching in oxide RRAM 1-gen-2013 IELMINI, DANIELEBALATTI, SIMONE +
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONECHOI, SEOLIELMINI, DANIELE
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 1-gen-2013 BALATTI, SIMONEIELMINI, DANIELE +
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 1-gen-2016 AMBROGIO, STEFANOBALATTI, SIMONEMILO, VALERIOCARBONI, ROBERTOIELMINI, DANIELE +
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Normally-off logic based on resistive switches - Part I: Logic gates 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 1-gen-2016 BALATTI, SIMONEAMBROGIO, STEFANOCARBONI, ROBERTOMILO, VALERIOWANG, ZHONGQIANGIELMINI, DANIELE +
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 1-gen-2016 Wang, ZhongqiangAmbrogio, StefanoBalatti, SimoneIelmini, Daniele +
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 1-gen-2013 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +