BALATTI, SIMONE

BALATTI, SIMONE  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.072 secondi).
Titolo Data di pubblicazione Autori File
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 1-gen-2011 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Data retention statistics and modelling in HfO<inf>2</inf> resistive switching memories 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Ion migration model for resistive switching in transition metal oxides 1-gen-2012 IELMINI, DANIELEBALATTI, SIMONENARDI, FEDERICO +
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 1-gen-2016 Ambrogio, S.Balatti, S.Milo, V.Carboni, R.Wang, Z.Ielmini, D. +
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM In corso di stampa IELMINI, DANIELEBALATTI, SIMONE +
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 1-gen-2014 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE +
Statistical modeling of program and read variability in resistive switching devices 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Understanding pulsed-cycling variability and endurance in HfO<inf>x</inf> RRAM 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Understanding switching variability and random telegraph noise in resistive RAM 1-gen-2013 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Variability and cycling endurance in nanoscale resistive switching memory 1-gen-2015 IELMINI, DANIELEBALATTI, SIMONEAMBROGIO, STEFANO +
Variability and failure of set process in HfO<inf>2</inf> RRAM2013 5th IEEE International Memory Workshop 1-gen-2013 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 1-gen-2014 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +