BALATTI, SIMONE
BALATTI, SIMONE
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele; Gilmer, D. C.
Bipolar-switching model of RRAM by field- and temperature-activated ion migration
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Complementary switching in metal oxides: toward diode-less crossbar RRAMs
2011-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; Ielmini, Daniele
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)
2015-01-01 Wang, Z. Q.; Ambrogio, Stefano; Balatti, Simone; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Data retention statistics and modelling in HfO2 resistive switching memories
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Wang, Zhong Qiang; Chen, Yu Sheng; Lee, Heng Yuan; Chen, Frederick T.; Ielmini, Daniele
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, V.; Wang, D.; Ielmini, Daniele
Ion migration model for resistive switching in transition metal oxides
2012-01-01 Ielmini, Daniele; S., Larentis; Balatti, Simone; Nardi, Federico; D. C., Gilmer
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning
2016-01-01 Ambrogio, S.; Balatti, S.; Milo, V.; Carboni, R.; Wang, Z.; Calderoni, A.; Ramaswamy, N.; Ielmini, D.
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM
In corso di stampa Ielmini, Daniele; Stefano, Larentis; Balatti, Simone
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM)
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Z. Q.; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation
2012-01-01 Choi, Seol; S., Ambrogio; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Statistical modeling of program and read variability in resistive switching devices
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, A.; Ielmini, Daniele
Understanding pulsed-cycling variability and endurance in HfOx RRAM
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Z. Q.; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Understanding switching variability and random telegraph noise in resistive RAM
2013-01-01 Ambrogio, Stefano; Balatti, Simone; A., Cubeta; A., Calderoni; N., Ramaswamy; Ielmini, Daniele
Variability and cycling endurance in nanoscale resistive switching memory
2015-01-01 Ielmini, Daniele; Balatti, Simone; Wang, Z. Q.; Ambrogio, Stefano
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop
2013-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele; D. C., Gilmer
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele