NARDI, FEDERICO
NARDI, FEDERICO
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
Bipolar-switching model of RRAM by field- and temperature-activated ion migration
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Complementary switching in metal oxides: toward diode-less crossbar RRAMs
2011-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; Ielmini, Daniele
Complementary switching in oxide-based bipolar resistive switching memory (RRAM)
2013-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
2011-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
2008-01-01 Cagli, Carlo; Ielmini, Daniele; Nardi, Federico; Lacaita, ANDREA LEONARDO
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012-01-01 Ielmini, Daniele; Nardi, Federico; Balatti, Simone
Filament diffusion model for simulating reset and retention processes in RRAM
2011-01-01 S., Larentis; Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Ion migration model for resistive switching in transition metal oxides
2012-01-01 Ielmini, Daniele; S., Larentis; Balatti, Simone; Nardi, Federico; D. C., Gilmer
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Nanowire-based resistive switching memories: devices, operation and scaling
2013-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Y., Zhang
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
2011-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory
2009-01-01 Ielmini, Daniele; Nardi, Federico; A., Vigani; E., Cianci; S., Spiga
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode
2009-01-01 A., Demolliens; Muller, C. H.; D., Deleruyelle; S., Spiga; E., Cianci; M., Fanciulli; Nardi, Federico; Cagli, Carlo; Ielmini, Daniele
Reset current reduction and set-reset instabilities in unipolar NiO RRAM
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Reset instability in pulsed-operated unipolar resistive switching memory
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation
2012-01-01 Choi, Seol; S., Ambrogio; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Resistance transition in metal oxides induced by electronic threshold switching
2009-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo