NARDI, FEDERICO

NARDI, FEDERICO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

Mostra records
Risultati 1 - 20 di 33 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori File
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 1-gen-2011 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 1-gen-2013 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 1-gen-2011 NARDI, FEDERICOIELMINI, DANIELECAGLI, CARLO +
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 1-gen-2008 CAGLI, CARLOIELMINI, DANIELENARDI, FEDERICOLACAITA, ANDREA LEONARDO
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 1-gen-2012 IELMINI, DANIELENARDI, FEDERICOBALATTI, SIMONE
Filament diffusion model for simulating reset and retention processes in RRAM 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Ion migration model for resistive switching in transition metal oxides 1-gen-2012 IELMINI, DANIELEBALATTI, SIMONENARDI, FEDERICO +
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 1-gen-2009 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Nanowire-based resistive switching memories: devices, operation and scaling 1-gen-2013 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO +
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 1-gen-2011 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 1-gen-2009 IELMINI, DANIELENARDI, FEDERICO +
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 1-gen-2009 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 1-gen-2011 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Reset instability in pulsed-operated unipolar resistive switching memory 1-gen-2011 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE +
Resistance transition in metal oxides induced by electronic threshold switching 1-gen-2009 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 1-gen-2010 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLO