WANG, WEI
WANG, WEI
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A volatile RRAM synapse for neuromorphic computing
2019-01-01 Covi, E.; Ielmini, D.; Lin, Y. -H.; Wang, W.; Stecconi, T.; Milo, V.; Bricalli, A.; Ambrosi, E.; Pedretti, G.; Tseng, T. -Y.
Binary‐Stochasticity‐Enabled Highly Efficient Neuromorphic Deep Learning Achieves Better‐than‐Software Accuracy
2023-01-01 Li, Yang; Wang, Wei; Wang, Ming; Dou, Chunmeng; Ma, Zhengyu; Zhou, Huihui; Zhang, Peng; Lepri, Nicola; Zhang, Xumeng; Luo, Qing; Xu, Xiaoxin; Yang, Guanhua; Zhang, Feng; Li, Ling; Ielmini, Daniele; Liu, Ming
Computing of temporal information in spiking neural networks with ReRAM synapses
2019-01-01 Wang, W.; Pedretti, G.; Milo, V.; Carboni, R.; Calderoni, A.; Ramaswamy, N.; Spinelli, A. S.; Ielmini, D.
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch
2018-01-01 Wang, Ming; Wang, Wei; Leow, Wan Ru; Wan, Changjin; Chen, Geng; Zeng, Yi; Yu, Jiancan; Liu, Yaqing; Cai, Pingqiang; Wang, Hong; Ielmini, Daniele; Chen, Xiaodong
Integration and co-design of memristive devices and algorithms for artificial intelligence
2020-01-01 Wang, Wei; Song, Wenhao; Yao, Peng; Li, Yang; Van Nostrand, Joseph; Qiu, Qinru; Ielmini, Daniele; Joshua Yang, J.
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses
2018-01-01 Wang, Wei; Pedretti, Giacomo; Milo, Valerio; Carboni, Roberto; Calderoni, Alessandro; Ramaswamy, Nirmal; Spinelli, Alessandro S; Ielmini, Daniele
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion
2019-01-01 Wang, W.; Covi, E.; Lin, Y. -H.; Ambrosi, E.; Ielmini, D.
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories
2020-01-01 Wang, Wei; Covi, Erika; Milozzi, Alessandro; Farronato, Matteo; Ricci, Saverio; Sbandati, Caterina; Pedretti, Giacomo; Ielmini, Daniele
Phase-change memories (PCM)-Experiments and modelling: General discussion
2019-01-01 Bartlett, P.; Berg, A. I.; Bernasconi, M.; Brown, S.; Burr, G.; Foroutan-Nejad, C.; Gale, E.; Huang, R.; Ielmini, D.; Kissling, G.; Kolosov, V.; Kozicki, M.; Nakamura, H.; Rushchanskii, K.; Salinga, M.; Shluger, A.; Thompson, D.; Valov, I.; Wang, W.; Waser, R.; Williams, R. S.
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
2019-01-01 Wang, W.; Bricalli, A.; Laudato, M.; Ambrosi, E.; Covi, Erika; Ielmini, D.
Redox memristors with volatile threshold switching behavior for neuromorphic computing
2022-01-01 Wang, Yu-Hao; Gong, Tian-Cheng; Ding, Ya-Xin; Li, Yang; Wang, Wei; Chen, Zi-Ang; Du, Nan; Covi, Erika; Farronato, Matteo; Ielmini, Daniele; Zhang, Xu-Meng; Luo, Qing
Solving matrix equations in one step with cross-point resistive arrays
2019-01-01 Sun, Z.; Pedretti, G.; Ambrosi, E.; Bricalli, A.; Wang, W.; Ielmini, D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
2019-01-01 Wang, W.; Wang, M.; Ambrosi, E.; Bricalli, A.; Laudato, M.; Sun, Z.; Chen, X.; Ielmini, D.
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization
2021-01-01 Covi, E.; Wang, W.; Lin, Y.; Farronato, M.; Ambrosi, E.; Ielmini, D.
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling
2021-01-01 Wang, W.; Covi, E.; Lin, Y.; Ambrosi, E.; Milozzi, A.; Sbandati, C.; Farronato, M.; Ielmini, D.
Synaptic and neuromorphic functions: General discussion
2019-01-01 Berg, A. I.; Brivio, S.; Brown, S.; Burr, G.; Deswal, S.; Deuermeier, J.; Gale, E.; Hwang, H.; Ielmini, D.; Indiveri, G.; Kenyon, A. J.; Kiazadeh, A.; Koymen, I.; Kozicki, M.; Li, Y.; Mannion, D.; Prodromakis, T.; Ricciardi, C.; Siegel, S.; Speckbacher, M.; Valov, I.; Wang, W.; Williams, R. S.; Wouters, D.; Yang, Y.
Valence change ReRAMs (VCM) - Experiments and modelling: General discussion
2019-01-01 Aono, M.; Baeumer, C.; Bartlett, P.; Brivio, S.; Burr, G.; Burriel, M.; Carlos, E.; Deswal, S.; Deuermeier, J.; Dittmann, R.; Du, H.; Gale, E.; Hambsch, S.; Hilgenkamp, H.; Ielmini, D.; Kenyon, A. J.; Kiazadeh, A.; Kindsmuller, A.; Kissling, G.; Koymen, I.; Menzel, S.; Pla Asesio, D.; Prodromakis, T.; Santamaria, M.; Shluger, A.; Thompson, D.; Valov, I.; Wang, W.; Waser, R.; Williams, R. S.; Wrana, D.; Wouters, D.; Yang, Y.; Zaffora, A.
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.