REDAELLI, ANDREA

REDAELLI, ANDREA  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

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Risultati 1 - 16 di 16 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori File
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 1-gen-2009 BONIARDI, MATTIAREDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELE +
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 1-gen-2008 REDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELELACAITA, ANDREA LEONARDO +
BEOL Process Effects on ePCM Reliability 1-gen-2022 Redaelli, ASamanni, GBaldo, MIelmini, DGonella, R +
Electronic switching effect and phase-change transition in chalcogenide materials 1-gen-2004 REDAELLI, ANDREALACAITA, ANDREA LEONARDOIELMINI, DANIELE +
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 1-gen-2011 BONIARDI, MATTIAIELMINI, DANIELEREDAELLI, ANDREAPIROVANO, AGOSTINOVARESI, ENRICOLACAITA, ANDREA LEONARDO +
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time 1-gen-2006 REDAELLI, ANDREAIELMINI, DANIELERUSSO, UGOLACAITA, ANDREA LEONARDO
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation 1-gen-2006 RUSSO, UGOIELMINI, DANIELEREDAELLI, ANDREALACAITA, ANDREA LEONARDO
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells 1-gen-2008 REDAELLI, ANDREAIELMINI, DANIELERUSSO, UGOLACAITA, ANDREA LEONARDO
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling 1-gen-2008 RUSSO, UGOIELMINI, DANIELEREDAELLI, ANDREALACAITA, ANDREA LEONARDO
Modeling of programming and read performance in phase-change memories - Part II: Program disturb and mixed scaling approach 1-gen-2008 IELMINI, DANIELEREDAELLI, ANDREALACAITA, ANDREA LEONARDO +
Reliability study of phase-change non-volatile memories. 1-gen-2004 PIROVANO, AGOSTINOREDAELLI, ANDREAIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 1-gen-2013 BONIARDI, MATTIAREDAELLI, ANDREALACAITA, ANDREA LEONARDO +
The race of phase change memories to nanoscale storage and applications 1-gen-2013 LACAITA, ANDREA LEONARDOREDAELLI, ANDREA
Thresold switching and phase transition numerical models for phase change memory simulations 1-gen-2008 REDAELLI, ANDREAPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Unified mechanisms for structure relaxation and crystallization in phase-change memory 1-gen-2009 IELMINI, DANIELEBONIARDI, MATTIALACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO