REDAELLI, ANDREA
REDAELLI, ANDREA
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
Characterization of reset state through energy activation study in Ge-GST based ePCM
2022-01-01 Baldo, M; Turconi, L; Motta, A; Petroni, E; Laurin, L; Ielmini, D; Redaelli, A
Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators
2024-01-01 Pistolesi, L.; Glukhov, A.; de Gracia Herranz, A.; Lopez-Vallejo, M.; Carissimi, M.; Pasotti, M.; Rolandi, P.; Redaelli, A.; Martín, I. Muñoz; Bianchi, S.; Bonfanti, A.; Ielmini, D.
Impact of Material Composition on the write performance of Phase-Change Memory Devices
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; M., Allegra
Interaction between forming pulse and integration process flow in ePCM
2022-01-01 Baldo, M; Petroni, E; Laurin, L; Samanni, G; Melnic, O; Ielmini, D; Redaelli, A
Modeling of virgin state and forming operation in embedded phase change memory (PCM)
2020-01-01 Baldo, M.; Melnic, O.; Scuderi, M.; Nicotra, G.; Borghi, M.; Petroni, E.; Motta, A.; Zuliani, P.; Redaelli, A.; Ielmini, D.
Multiphysics modeling of PCM devices for scaling investigation
2010-01-01 G., Ferrari; A., Ghetti; Ielmini, Daniele; Redaelli, Andrea; Pirovano, Agostino
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM
2023-01-01 Baldo, M.; Laurin, L.; Petroni, E.; Pavesi, C.; Motta, A.; Ielmini, D.; Annunziata, R.; Redaelli, A.
What molecular dynamics simulations can tell us about mechanical properties of kinesin and its interaction with tubulin.
2007-01-01 Aprodu, Iuliana; Gautieri, Alfonso; F. M., Montevecchi; Redaelli, Andrea; Soncini, Monica; Redaelli, ALBERTO CESARE LUIGI