RUSSO, UGO

RUSSO, UGO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.014 secondi).
Titolo Data di pubblicazione Autori File
Analytical modeling of chalcogenide crystallization for PCM data-retention extrapolation 1-gen-2007 RUSSO, UGOIELMINI, DANIELELACAITA, ANDREA LEONARDO
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 1-gen-2009 RUSSO, UGOIELMINI, DANIELECAGLI, CARLOLACAITA, ANDREA LEONARDO
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time 1-gen-2006 REDAELLI, ANDREAIELMINI, DANIELERUSSO, UGOLACAITA, ANDREA LEONARDO
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation 1-gen-2006 RUSSO, UGOIELMINI, DANIELEREDAELLI, ANDREALACAITA, ANDREA LEONARDO
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells 1-gen-2008 REDAELLI, ANDREAIELMINI, DANIELERUSSO, UGOLACAITA, ANDREA LEONARDO
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling 1-gen-2008 RUSSO, UGOIELMINI, DANIELEREDAELLI, ANDREALACAITA, ANDREA LEONARDO
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. 1-gen-2009 RUSSO, UGOIELMINI, DANIELECAGLI, CARLOLACAITA, ANDREA LEONARDO
Study of multilevel programming in programmable metallization cell (PMC) memory 1-gen-2009 RUSSO, UGOIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Voltage-driven ON-OFF transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory 1-gen-2009 RUSSO, UGOIELMINI, DANIELE +