LAVIZZARI, SIMONE
LAVIZZARI, SIMONE
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation"
2007-01-01 Ielmini, Daniele; Lavizzari, Simone; D., Sharma; Lacaita, ANDREA LEONARDO
A new transient model for recovery and relaxation oscillations in phase change memories
2010-01-01 Lavizzari, Simone; Ielmini, Daniele; Lacaita, ANDREA LEONARDO
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
2009-01-01 Fugazza, Davide; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells
2008-01-01 Ielmini, Daniele; Sharma, Deepak; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Random telegraph signal noise in phase change memory devices
2010-01-01 Fugazza, Davide; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part I: Experimental study
2009-01-01 Ielmini, Daniele; Sharma, Deepak; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part II: Physics-based modeling
2009-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2
2008-01-01 Ielmini, Daniele; Lavizzari, Simone; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices
2010-01-01 Lavizzari, Simone; Sharma, Deepak; Ielmini, Daniele
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Transient simulation of delay and switching effects in phase change memories
2010-01-01 Lavizzari, Simone; Ielmini, Daniele; Lacaita, ANDREA LEONARDO