LAVIZZARI, SIMONE

LAVIZZARI, SIMONE  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 14 di 14 (tempo di esecuzione: 0.046 secondi).
Titolo Data di pubblicazione Autori File
A new transient model for recovery and relaxation oscillations in phase change memories 1-gen-2010 LAVIZZARI, SIMONEIELMINI, DANIELELACAITA, ANDREA LEONARDO
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 1-gen-2009 FUGAZZA, DAVIDEIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDO
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 1-gen-2007 IELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDO +
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells 1-gen-2008 IELMINI, DANIELESHARMA, DEEPAKLAVIZZARI, SIMONELACAITA, ANDREA LEONARDO
Random telegraph signal noise in phase change memory devices 1-gen-2010 FUGAZZA, DAVIDEIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part I: Experimental study 1-gen-2009 IELMINI, DANIELESHARMA, DEEPAKLAVIZZARI, SIMONELACAITA, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part II: Physics-based modeling 1-gen-2009 LAVIZZARI, SIMONEIELMINI, DANIELESHARMA, DEEPAKLACAITA, ANDREA LEONARDO
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 1-gen-2009 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction 1-gen-2008 LAVIZZARI, SIMONEIELMINI, DANIELESHARMA, DEEPAKLACAITA, ANDREA LEONARDO
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 1-gen-2008 IELMINI, DANIELELAVIZZARI, SIMONESHARMA, DEEPAKLACAITA, ANDREA LEONARDO
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices 1-gen-2010 LAVIZZARI, SIMONESHARMA, DEEPAKIELMINI, DANIELE
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 1-gen-2008 LAVIZZARI, SIMONEIELMINI, DANIELESHARMA, DEEPAKLACAITA, ANDREA LEONARDO
Transient simulation of delay and switching effects in phase change memories 1-gen-2010 LAVIZZARI, SIMONEIELMINI, DANIELELACAITA, ANDREA LEONARDO