The electrical and thermal parameters of phase change memory (PCM) cells are modified by cycling-induced mechanisms. In this letter, an adaptive cycling procedure is introduced to provide an endurance characterization by keeping the peak temperature at the heater/chalcogenide interface almost constant despite the cell parameters Variations. Experimental results on the PCM wall architecture are collected and explained by considering the reduction of the heater electrical/thermal resistances and the impact of crystallization kinetics variation during cycling.
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells
BONIARDI, MATTIA;REDAELLI, ANDREA;LACAITA, ANDREA LEONARDO
2013-01-01
Abstract
The electrical and thermal parameters of phase change memory (PCM) cells are modified by cycling-induced mechanisms. In this letter, an adaptive cycling procedure is introduced to provide an endurance characterization by keeping the peak temperature at the heater/chalcogenide interface almost constant despite the cell parameters Variations. Experimental results on the PCM wall architecture are collected and explained by considering the reduction of the heater electrical/thermal resistances and the impact of crystallization kinetics variation during cycling.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
06530619.pdf
Accesso riservato
:
Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione
331.11 kB
Formato
Adobe PDF
|
331.11 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.