BALDO, MATTEO

BALDO, MATTEO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 12 di 12 (tempo di esecuzione: 0.017 secondi).
Titolo Data di pubblicazione Autori File
BEOL Process Effects on ePCM Reliability 1-gen-2022 Redaelli, ASamanni, GBaldo, MIelmini, DGonella, R +
Characterization of reset state through energy activation study in Ge-GST based ePCM 1-gen-2022 Baldo, MIelmini, DRedaelli, A +
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM) 1-gen-2023 Cattaneo, LBaldo, MLepri, NSancandi, FBorghi, MIelmini, D +
Improving Ge-rich GST ePCM reliability through BEOL engineering 1-gen-2021 Baldo, M.Ielmini, D. +
Interaction between forming pulse and integration process flow in ePCM 1-gen-2022 Baldo, MMelnic, OIelmini, DRedaelli, A +
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories 1-gen-2023 Baldo, M.Melnic, O.Redaelli, A.Ielmini, D. +
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks 1-gen-2022 Lepri N.Baldo M.Mannocci P.Glukhov A.Milo V.Ielmini D.
Modeling Environment for Ge-rich GST Phase Change Memory Cells 1-gen-2022 Baldo, M.Ielmini, D. +
Modeling of oxide-based ECRAM programming by drift-diffusion ion transport 1-gen-2021 Baldo, MatteoIelmini, Daniele
Modeling of virgin state and forming operation in embedded phase change memory (PCM) 1-gen-2020 Baldo M.Melnic O.Redaelli A.Ielmini D. +
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM 1-gen-2023 Baldo, M.Pavesi, C.Ielmini, D.Redaelli, A. +
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology 1-gen-2023 Baldo, MIelmini, D +