BONIARDI, MATTIA

BONIARDI, MATTIA  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 14 di 14 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autori File
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 1-gen-2009 BONIARDI, MATTIAREDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELE +
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses 1-gen-2009 IELMINI, DANIELEBONIARDI, MATTIA
Electrical Conductivity Discontinuity at Melt in Phase Change Memory 1-gen-2014 CRESPI, LUCABONIARDI, MATTIALACAITA, ANDREA LEONARDO +
Energy landscape models for conduction and drift in PCM 1-gen-2011 IELMINI, DANIELEFUGAZZA, DAVIDEBONIARDI, MATTIA
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 1-gen-2011 BONIARDI, MATTIAIELMINI, DANIELEREDAELLI, ANDREAPIROVANO, AGOSTINOVARESI, ENRICOLACAITA, ANDREA LEONARDO +
Impact of Material Composition on the write performance of Phase-Change Memory Devices 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO +
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase 1-gen-2010 IELMINI, DANIELEFUGAZZA, DAVIDEBONIARDI, MATTIAMONTEMURRO, GIUSEPPE VITOLACAITA, ANDREA LEONARDO
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 1-gen-2011 BONIARDI, MATTIAREDAELLI, ANDREAIELMINI, DANIELEPIROVANO, AGOSTINO +
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures 1-gen-2014 BONIARDI, MATTIACRESPI, LUCALACAITA, ANDREA LEONARDO +
Physical origin of the resistance drift exponent in amorphous phase change materials 1-gen-2011 BONIARDI, MATTIAIELMINI, DANIELE
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 1-gen-2009 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 1-gen-2013 BONIARDI, MATTIAREDAELLI, ANDREALACAITA, ANDREA LEONARDO +
Unified mechanisms for structure relaxation and crystallization in phase-change memory 1-gen-2009 IELMINI, DANIELEBONIARDI, MATTIALACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO