Amorphous materials are known to undergo temperature-accelerated structural relaxation (SR), affecting the electrical and optical properties. Due to SR, phase change memory (PCM) displays a drift of resistance after programming. Our study of SR in PCMs demonstrates that drift is controlled by the activation energy for conduction, allowing for the optimization of programming algorithms and active material for minimum drift. Statistical analysis reveals the defectrelated nature of resistance drift. The possible physical processes responsible for resistance drift are finally discussed.

Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase

IELMINI, DANIELE;FUGAZZA, DAVIDE;BONIARDI, MATTIA;MONTEMURRO, GIUSEPPE VITO;LACAITA, ANDREA LEONARDO
2010

Abstract

Amorphous materials are known to undergo temperature-accelerated structural relaxation (SR), affecting the electrical and optical properties. Due to SR, phase change memory (PCM) displays a drift of resistance after programming. Our study of SR in PCMs demonstrates that drift is controlled by the activation energy for conduction, allowing for the optimization of programming algorithms and active material for minimum drift. Statistical analysis reveals the defectrelated nature of resistance drift. The possible physical processes responsible for resistance drift are finally discussed.
E*PCOS - Proceedings
phase change materials, phase change memory, structural relaxation, resistance drift, reliability modeling
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/997846
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