Amorphous materials are known to undergo temperature-accelerated structural relaxation (SR), affecting the electrical and optical properties. Due to SR, phase change memory (PCM) displays a drift of resistance after programming. Our study of SR in PCMs demonstrates that drift is controlled by the activation energy for conduction, allowing for the optimization of programming algorithms and active material for minimum drift. Statistical analysis reveals the defectrelated nature of resistance drift. The possible physical processes responsible for resistance drift are finally discussed.
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
IELMINI, DANIELE;FUGAZZA, DAVIDE;BONIARDI, MATTIA;MONTEMURRO, GIUSEPPE VITO;LACAITA, ANDREA LEONARDO
2010-01-01
Abstract
Amorphous materials are known to undergo temperature-accelerated structural relaxation (SR), affecting the electrical and optical properties. Due to SR, phase change memory (PCM) displays a drift of resistance after programming. Our study of SR in PCMs demonstrates that drift is controlled by the activation energy for conduction, allowing for the optimization of programming algorithms and active material for minimum drift. Statistical analysis reveals the defectrelated nature of resistance drift. The possible physical processes responsible for resistance drift are finally discussed.File in questo prodotto:
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epcos 2010
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