BONIARDI, MATTIA
BONIARDI, MATTIA
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
2009-01-01 Boniardi, Mattia; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; F., Pellizzer
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
2009-01-01 Ielmini, Daniele; Boniardi, Mattia
Electrical Conductivity Discontinuity at Melt in Phase Change Memory
2014-01-01 Crespi, Luca; A., Ghetti; Boniardi, Mattia; Lacaita, ANDREA LEONARDO
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
2011-01-01 Boniardi, Mattia; Ielmini, Daniele; I., Tortorelli; Redaelli, Andrea; Pirovano, Agostino; M., Allegra; M., Magistretti; C., Bresolin; D., Erbetta; A., Modelli; Varesi, Enrico; F., Pellizzer; Lacaita, ANDREA LEONARDO; R., Bez
Physical origin of the resistance drift exponent in amorphous phase change materials
2011-01-01 Boniardi, Mattia; Ielmini, Daniele
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
2010-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells
2013-01-01 Boniardi, Mattia; Redaelli, Andrea; A., Ghetti; Lacaita, ANDREA LEONARDO
Unified mechanisms for structure relaxation and crystallization in phase-change memory
2009-01-01 Ielmini, Daniele; Boniardi, Mattia; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino