MALAVENA, GERARDO

MALAVENA, GERARDO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.029 secondi).
Titolo Data di pubblicazione Autori File
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 1-gen-2021 Aurelio MannaraGerardo MalavenaAlessandro Sottocornola SpinelliChristian Monzio Compagnoni
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 1-gen-2021 G. MalavenaA. Sottocornola SpinelliC. Monzio Compagnoni
Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays 1-gen-2023 GERARDO MALAVENAMATTIA GIULIANINIALESSANDRO Sottocornola SPINELLICHRISTIAN MONZIO COMPAGNONI +
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 1-gen-2019 G. MalavenaA. MannaraA. L. LacaitaA. Sottocornola SpinelliC. Monzio Compagnoni
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 1-gen-2025 Matteo GreattiJurij L. MazzolaLorenzo CantùAlessandro SpinelliChristian Monzio CompagnoniGerardo Malavena +
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage 1-gen-2024 GERARDO MALAVENAMATTIA GIULIANINIDAVID G. REFALDICHRISTIAN MONZIO COMPAGNONIALESSANDRO SOTTOCORNOLA SPINELLI +
Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise 1-gen-2024 GERARDO MALAVENAMATTIA GIULIANINIDAVID G. REFALDICHRISTIAN MONZIO COMPAGNONIALESSANDRO SOTTOCORNOLA SPINELLI +
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 1-gen-2023 Groppi, CMaspero, FRovelli, AAsa, MMalavena, GMonzio Compagnoni, CAlbisetti, EBadillo-Avila, MABertacco, R +
Evidence of Widely Distributed Time Constants in the Vertical Charge Loss of 3-D Charge-Trap NAND Flash Memories 1-gen-2024 David G. RefaldiGerardo MalavenaAlessandro Sottocornola SpinelliChristian Monzio Compagnoni +
Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 1-gen-2024 Jurij L. MazzolaMatteo GreattiChristian Monzio CompagnoniAlessandro Sottocornola SpinelliGerardo Malavena +
First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime 1-gen-2024 David G. RefaldiGerardo MalavenaMattia GiulianiniAlessandro Sottocornola SpinelliChristian Monzio Compagnoni +
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 1-gen-2018 MALAVENA, GERARDOAndrea L. LacaitaAlessandro S. SpinelliChristian Monzio Compagnoni
Investigation of the Meyer-Neldel rule in Si MOSFETs 1-gen-2020 Giulio FranchiniGerardo MalavenaChristian Monzio CompagnoniAlessandro S. Spinelli
Memristive and CMOS Devices for Neuromorphic Computing 1-gen-2020 Milo, ValerioMalavena, GerardoMonzio Compagnoni, ChristianIelmini, Daniele
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 1-gen-2022 M. DossenaG. MalavenaA. Sottocornola SpinelliC. Monzio Compagnoni
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional NAND Flash Memories 1-gen-2024 David G. RefaldiGerardo MalavenaAlessandro Sottocornola SpinelliChristian Monzio Compagnoni +
Random telegraph noise in 3d nand flash memories 1-gen-2021 Sottocornola Spinelli A.Malavena G.Lacaita A. L.Monzio Compagnoni C.
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays 1-gen-2022 G. MalavenaM. GiulianiniA. Sottocornola SpinelliC. Monzio Compagnoni +
Roadmap to neuromorphic computing with emerging technologies 1-gen-2024 D. IelminiG. MalavenaC. Monzio CompagnoniP. Mannocci +
Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings 1-gen-2022 Giulianini M.Malavena G.Monzio Compagnoni CSottocornola Spinelli A.