We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in state-of-the-art monocrystalline Si MOSFETs. This unexpected result is explained via device simulation in terms of the self-consistency between the mobile charge and the device electrostatics. The dependence on device parameters is then discussed, showing that neglecting this effect can lead to interpretation errors for data evaluated at low activation energies.

Investigation of the Meyer-Neldel rule in Si MOSFETs

Giulio Franchini;Gerardo Malavena;Christian Monzio Compagnoni;Alessandro S. Spinelli
2020

Abstract

We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in state-of-the-art monocrystalline Si MOSFETs. This unexpected result is explained via device simulation in terms of the self-consistency between the mobile charge and the device electrostatics. The dependence on device parameters is then discussed, showing that neglecting this effect can lead to interpretation errors for data evaluated at low activation energies.
Meyer-Neldel rule, semiconductor device modeling, activation energy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1153586
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