In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.
Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise
GERARDO MALAVENA;MATTIA GIULIANINI;DAVID G. REFALDI;CHRISTIAN MONZIO COMPAGNONI;ALESSANDRO SOTTOCORNOLA SPINELLI
2024-01-01
Abstract
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.File in questo prodotto:
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