RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MALAVENA, GERARDO
 Distribuzione geografica
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Continente #
NA - Nord America 1.900
EU - Europa 1.707
AS - Asia 1.465
SA - Sud America 248
AF - Africa 81
OC - Oceania 1
Totale 5.402
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Nazione #
US - Stati Uniti d'America 1.831
RU - Federazione Russa 591
IT - Italia 564
SG - Singapore 510
CN - Cina 416
BR - Brasile 210
FR - Francia 200
VN - Vietnam 174
KR - Corea 122
JP - Giappone 82
CH - Svizzera 67
HK - Hong Kong 45
MA - Marocco 45
DE - Germania 42
CA - Canada 38
GB - Regno Unito 38
NL - Olanda 31
AT - Austria 23
BE - Belgio 23
AR - Argentina 21
FI - Finlandia 21
SE - Svezia 20
IN - India 18
ES - Italia 17
ID - Indonesia 17
IE - Irlanda 17
TW - Taiwan 15
IQ - Iraq 11
MX - Messico 10
NO - Norvegia 10
ZA - Sudafrica 10
BD - Bangladesh 9
PL - Polonia 8
UZ - Uzbekistan 8
CI - Costa d'Avorio 7
TN - Tunisia 6
CR - Costa Rica 5
CZ - Repubblica Ceca 5
JM - Giamaica 5
VE - Venezuela 5
BG - Bulgaria 4
HU - Ungheria 4
IL - Israele 4
JO - Giordania 4
LB - Libano 4
AE - Emirati Arabi Uniti 3
EC - Ecuador 3
EE - Estonia 3
EG - Egitto 3
PY - Paraguay 3
RO - Romania 3
TR - Turchia 3
UA - Ucraina 3
AL - Albania 2
AZ - Azerbaigian 2
BJ - Benin 2
CO - Colombia 2
GR - Grecia 2
IR - Iran 2
KE - Kenya 2
KZ - Kazakistan 2
LT - Lituania 2
MG - Madagascar 2
MY - Malesia 2
PA - Panama 2
PS - Palestinian Territory 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
CL - Cile 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
HN - Honduras 1
LC - Santa Lucia 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MU - Mauritius 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
TJ - Tagikistan 1
UY - Uruguay 1
Totale 5.402
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Città #
Singapore 315
Ashburn 263
San Jose 244
Milan 180
Hefei 119
Seoul 102
Fairfield 98
Moscow 97
Santa Clara 90
Tokyo 76
Chandler 67
Beijing 59
Zurich 56
Los Angeles 55
Udine 54
The Dalles 52
Council Bluffs 51
Ho Chi Minh City 50
Houston 44
Woodbridge 41
Hanoi 40
Seattle 38
Kenitra 36
Boardman 35
Buffalo 35
North Charleston 35
Hong Kong 34
Ann Arbor 30
Lauterbourg 30
Kent 26
Cambridge 22
New York 21
Vienna 21
Wilmington 21
Rome 20
São Paulo 20
Dallas 18
London 18
Dublin 17
East Aurora 15
Frankfurt am Main 15
Washington 15
Taipei 14
Chicago 13
Duncan 13
Jakarta 13
Medford 13
Ottawa 13
Turin 13
Amsterdam 12
Lawrence 12
Memphis 12
Leuven 11
Redwood City 11
Brussels 10
Helsinki 10
Orem 10
Pohang 10
Redmond 10
Sandvika 10
Bergamo 9
Da Nang 9
Las Vegas 9
Verona 9
Dong Ket 8
Lappeenranta 8
Monza 8
Naples 8
San Giorgio di Nogaro 8
Stezzano 8
Tashkent 8
Brooklyn 7
Casablanca 7
Frisco 7
Montreal 7
Nuremberg 7
Philadelphia 7
Shanghai 7
Wuhan 7
Abidjan 6
Bologna 6
Curitiba 6
Guangzhou 6
Jinan 6
Johannesburg 6
Redondo Beach 6
Warsaw 6
Atlanta 5
Baghdad 5
Capelle 5
Denver 5
Haiphong 5
Madrid 5
Munich 5
San Diego 5
Amman 4
Bari 4
Campinas 4
Hallau 4
Hillsboro 4
Totale 3.141
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Nome #
Memristive and CMOS Devices for Neuromorphic Computing 250
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 230
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 201
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 198
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 196
Random telegraph noise in 3d nand flash memories 196
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 193
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 193
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 188
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 172
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 170
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 160
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 155
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 154
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 153
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 152
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 152
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays 150
Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays 144
Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention 143
First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime 142
Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories 137
Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 136
Memristive/CMOS devices for neuromorphic applications 134
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage 134
Evidence of Widely Distributed Time Constants in the Vertical Charge Loss of 3-D Charge-Trap NAND Flash Memories 133
Recent Advances in the Understanding of Random Telegraph Noise in 3–D NAND Flash memories 132
Investigation of the Meyer-Neldel rule in Si MOSFETs 126
Understanding the impact of polysilicon percolative conduction on 3D NAND variability 125
Roadmap to neuromorphic computing with emerging technologies 117
Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise 115
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional NAND Flash Memories 114
Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings 109
Turnaround in the temperature dependence of RTN in 3D NAND arrays entering the cryogenic regime 89
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination 86
Modeling of GIDL-Assisted Erase in 3-D NAND Flash Memory Arrays and Its Employment in NOR Flash-Based Spiking Neural Networks 31
Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis 24
AC Time-Dependent Dielectric Breakdown in polymer-based galvanic isolators: evidence of an impact of the electromechanical stress 16
Unravelling the Correlation Between Moisture and TDDB in Galvanic Isolators Based on Polymeric Dielectrics 11
Totale 5.461
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Categoria #
all - tutte 15.218
article - articoli 10.301
book - libri 0
conference - conferenze 4.466
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 451
Totale 30.436
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022200 18 1 19 40 17 7 24 13 19 7 14 21
2022/2023286 18 31 14 22 35 39 10 26 37 11 37 6
2023/2024237 14 19 14 28 8 20 21 12 15 39 12 35
2024/2025950 9 12 19 46 119 62 52 63 185 102 138 143
2025/20263.249 560 534 195 272 154 166 462 184 180 230 77 235
2026/202771 71 0 0 0 0 0 0 0 0 0 0 0
Totale 5.461