RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MALAVENA, GERARDO
 Distribuzione geografica
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Continente #
NA - Nord America 1.693
EU - Europa 1.542
AS - Asia 1.447
SA - Sud America 243
AF - Africa 81
OC - Oceania 1
Totale 5.007
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Nazione #
US - Stati Uniti d'America 1.644
RU - Federazione Russa 591
SG - Singapore 509
CN - Cina 412
IT - Italia 404
BR - Brasile 207
FR - Francia 200
VN - Vietnam 164
KR - Corea 121
JP - Giappone 82
CH - Svizzera 67
MA - Marocco 45
HK - Hong Kong 44
DE - Germania 41
GB - Regno Unito 38
NL - Olanda 30
CA - Canada 26
AT - Austria 23
BE - Belgio 22
FI - Finlandia 21
SE - Svezia 20
AR - Argentina 19
IN - India 18
ID - Indonesia 17
IE - Irlanda 17
ES - Italia 16
TW - Taiwan 15
IQ - Iraq 11
MX - Messico 10
NO - Norvegia 10
ZA - Sudafrica 10
BD - Bangladesh 9
PL - Polonia 8
UZ - Uzbekistan 8
CI - Costa d'Avorio 7
TN - Tunisia 6
CZ - Repubblica Ceca 5
VE - Venezuela 5
BG - Bulgaria 4
CR - Costa Rica 4
HU - Ungheria 4
IL - Israele 4
JO - Giordania 4
LB - Libano 4
AE - Emirati Arabi Uniti 3
EC - Ecuador 3
EE - Estonia 3
EG - Egitto 3
PY - Paraguay 3
RO - Romania 3
TR - Turchia 3
UA - Ucraina 3
AL - Albania 2
AZ - Azerbaigian 2
BJ - Benin 2
CO - Colombia 2
GR - Grecia 2
IR - Iran 2
JM - Giamaica 2
KE - Kenya 2
KZ - Kazakistan 2
LT - Lituania 2
MG - Madagascar 2
PA - Panama 2
PS - Palestinian Territory 2
SA - Arabia Saudita 2
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BH - Bahrain 1
BO - Bolivia 1
CL - Cile 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MU - Mauritius 1
MY - Malesia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 5.007
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Città #
Singapore 314
Ashburn 248
San Jose 220
Milan 132
Hefei 119
Seoul 102
Fairfield 97
Moscow 97
Santa Clara 89
Tokyo 76
Chandler 67
Beijing 57
Zurich 56
Los Angeles 54
Ho Chi Minh City 50
The Dalles 50
Udine 47
Council Bluffs 43
Houston 42
Woodbridge 41
Kenitra 36
Seattle 36
Buffalo 35
Hanoi 34
Hong Kong 33
North Charleston 33
Boardman 31
Ann Arbor 30
Lauterbourg 30
Kent 26
Cambridge 22
Vienna 21
Wilmington 21
New York 20
São Paulo 20
London 18
Dublin 17
Dallas 16
East Aurora 15
Frankfurt am Main 15
Washington 15
Taipei 14
Duncan 13
Jakarta 13
Medford 13
Chicago 12
Lawrence 12
Ottawa 12
Amsterdam 11
Leuven 11
Redwood City 11
Brussels 10
Helsinki 10
Orem 10
Redmond 10
Sandvika 10
Bergamo 9
Da Nang 9
Las Vegas 9
Pohang 9
Turin 9
Dong Ket 8
Lappeenranta 8
Monza 8
Rome 8
San Giorgio di Nogaro 8
Stezzano 8
Tashkent 8
Casablanca 7
Nuremberg 7
Shanghai 7
Wuhan 7
Abidjan 6
Brooklyn 6
Curitiba 6
Guangzhou 6
Jinan 6
Johannesburg 6
Montreal 6
Redondo Beach 6
Warsaw 6
Baghdad 5
Capelle 5
Haiphong 5
Madrid 5
San Diego 5
Amman 4
Campinas 4
Denver 4
Hallau 4
Hillsboro 4
Mexico City 4
Munich 4
Málaga 4
Porto Alegre 4
Sassari 4
Tianjin 4
Toronto 4
Americana 3
Asunción 3
Totale 2.959
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Nome #
Memristive and CMOS Devices for Neuromorphic Computing 237
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 210
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 195
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 192
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 189
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 188
Random telegraph noise in 3d nand flash memories 188
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 187
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 183
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 163
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 150
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 148
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 147
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 146
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 145
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 142
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 142
Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays 137
First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime 135
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays 132
Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention 131
Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories 129
Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 128
Memristive/CMOS devices for neuromorphic applications 126
Recent Advances in the Understanding of Random Telegraph Noise in 3–D NAND Flash memories 125
Evidence of Widely Distributed Time Constants in the Vertical Charge Loss of 3-D Charge-Trap NAND Flash Memories 124
Investigation of the Meyer-Neldel rule in Si MOSFETs 122
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage 118
Understanding the impact of polysilicon percolative conduction on 3D NAND variability 114
Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise 110
Roadmap to neuromorphic computing with emerging technologies 104
Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings 100
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional NAND Flash Memories 99
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination 77
Turnaround in the temperature dependence of RTN in 3D NAND arrays entering the cryogenic regime 76
Modeling of GIDL-Assisted Erase in 3-D NAND Flash Memory Arrays and Its Employment in NOR Flash-Based Spiking Neural Networks 24
Totale 5.063
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Categoria #
all - tutte 13.821
article - articoli 9.401
book - libri 0
conference - conferenze 4.032
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 388
Totale 27.642
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202148 0 0 0 0 0 0 0 0 0 19 16 13
2021/2022200 18 1 19 40 17 7 24 13 19 7 14 21
2022/2023286 18 31 14 22 35 39 10 26 37 11 37 6
2023/2024237 14 19 14 28 8 20 21 12 15 39 12 35
2024/2025950 9 12 19 46 119 62 52 63 185 102 138 143
2025/20262.922 560 534 195 272 154 166 462 184 180 215 0 0
Totale 5.063