MALAVENA, GERARDO
 Distribuzione geografica
Continente #
NA - Nord America 2.032
EU - Europa 1.739
AS - Asia 1.478
SA - Sud America 249
AF - Africa 81
Continente sconosciuto - Info sul continente non disponibili 62
OC - Oceania 1
Totale 5.642
Nazione #
US - Stati Uniti d'America 1.951
IT - Italia 594
RU - Federazione Russa 591
SG - Singapore 511
CN - Cina 417
BR - Brasile 210
FR - Francia 200
VN - Vietnam 174
KR - Corea 129
JP - Giappone 82
CH - Svizzera 67
HK - Hong Kong 46
MA - Marocco 45
CA - Canada 44
DE - Germania 42
GB - Regno Unito 39
NL - Olanda 31
AT - Austria 23
BE - Belgio 23
AR - Argentina 21
FI - Finlandia 21
SE - Svezia 20
IN - India 18
TW - Taiwan 18
ES - Italia 17
ID - Indonesia 17
IE - Irlanda 17
IQ - Iraq 11
MX - Messico 10
NO - Norvegia 10
ZA - Sudafrica 10
BD - Bangladesh 9
PL - Polonia 8
UZ - Uzbekistan 8
CI - Costa d'Avorio 7
JM - Giamaica 7
CR - Costa Rica 6
TN - Tunisia 6
CZ - Repubblica Ceca 5
VE - Venezuela 5
BG - Bulgaria 4
HU - Ungheria 4
IL - Israele 4
JO - Giordania 4
LB - Libano 4
AE - Emirati Arabi Uniti 3
CO - Colombia 3
EC - Ecuador 3
EE - Estonia 3
EG - Egitto 3
PY - Paraguay 3
RO - Romania 3
TR - Turchia 3
TT - Trinidad e Tobago 3
UA - Ucraina 3
AL - Albania 2
AZ - Azerbaigian 2
BJ - Benin 2
GR - Grecia 2
IR - Iran 2
KE - Kenya 2
KZ - Kazakistan 2
LT - Lituania 2
MD - Moldavia 2
MG - Madagascar 2
MY - Malesia 2
PA - Panama 2
PS - Palestinian Territory 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
CL - Cile 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
GT - Guatemala 1
HN - Honduras 1
LC - Santa Lucia 1
LU - Lussemburgo 1
LV - Lettonia 1
MU - Mauritius 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
TJ - Tagikistan 1
UY - Uruguay 1
Totale 5.580
Città #
Singapore 316
Ashburn 280
San Jose 246
Milan 188
Hefei 119
Seoul 103
Fairfield 98
Moscow 97
Santa Clara 93
Council Bluffs 83
Tokyo 76
Chandler 67
Beijing 59
Los Angeles 58
Zurich 56
Udine 54
The Dalles 52
Ho Chi Minh City 50
Houston 44
Woodbridge 41
Hanoi 40
Seattle 38
Kenitra 36
Boardman 35
Buffalo 35
Hong Kong 35
North Charleston 35
Ann Arbor 30
Lauterbourg 30
Kent 26
Cambridge 22
New York 22
Vienna 21
Wilmington 21
Rome 20
São Paulo 20
Dallas 19
London 18
Dublin 17
Washington 16
Chicago 15
East Aurora 15
Frankfurt am Main 15
Taipei 15
Duncan 13
Jakarta 13
Medford 13
Ottawa 13
Turin 13
Amsterdam 12
Lawrence 12
Memphis 12
Reana del Rojale 12
Leuven 11
Redwood City 11
Brussels 10
Helsinki 10
Orem 10
Pohang 10
Redmond 10
Sandvika 10
Bergamo 9
Da Nang 9
Las Vegas 9
Naples 9
Verona 9
Dong Ket 8
Frisco 8
Lappeenranta 8
Monza 8
San Giorgio di Nogaro 8
Stezzano 8
Tashkent 8
Brooklyn 7
Casablanca 7
Montreal 7
Nuremberg 7
Philadelphia 7
Phoenix 7
Shanghai 7
Wuhan 7
Abidjan 6
Bologna 6
Curitiba 6
Guangzhou 6
Jinan 6
Johannesburg 6
Redondo Beach 6
Warsaw 6
Atlanta 5
Baghdad 5
Capelle 5
Denver 5
Haiphong 5
Madrid 5
Munich 5
Padua 5
San Diego 5
San José 5
Toronto 5
Totale 3.231
Nome #
Memristive and CMOS Devices for Neuromorphic Computing 252
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 233
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 207
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 202
Random telegraph noise in 3d nand flash memories 198
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 197
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 195
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 194
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 189
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 180
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 173
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 164
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 159
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 155
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 155
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 154
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays 154
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 153
Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention 148
Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories 147
First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime 147
Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays 146
Evidence of Widely Distributed Time Constants in the Vertical Charge Loss of 3-D Charge-Trap NAND Flash Memories 142
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage 142
Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 142
Memristive/CMOS devices for neuromorphic applications 138
Recent Advances in the Understanding of Random Telegraph Noise in 3–D NAND Flash memories 136
Investigation of the Meyer-Neldel rule in Si MOSFETs 128
Understanding the impact of polysilicon percolative conduction on 3D NAND variability 126
Roadmap to neuromorphic computing with emerging technologies 122
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional NAND Flash Memories 118
Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise 115
Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings 112
Turnaround in the temperature dependence of RTN in 3D NAND arrays entering the cryogenic regime 92
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination 91
Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis 32
Modeling of GIDL-Assisted Erase in 3-D NAND Flash Memory Arrays and Its Employment in NOR Flash-Based Spiking Neural Networks 32
AC Time-Dependent Dielectric Breakdown in polymer-based galvanic isolators: evidence of an impact of the electromechanical stress 27
Unravelling the Correlation Between Moisture and TDDB in Galvanic Isolators Based on Polymeric Dielectrics 17
Modeling moisture effects on Time-Dependent Dielectric Breakdown in galvanic isolators based on polymeric dielectrics 13
Exploring the Temperature Dependence of the String Saturation Current in 3-D nand Flash Arrays Down to the Deep-Cryogenic Regime 8
Efficient 3-D Simulation of Avalanche Breakdown and Transport in Wide-Area IGBT Corners 7
Totale 5.642
Categoria #
all - tutte 16.047
article - articoli 10.839
book - libri 0
conference - conferenze 4.733
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 475
Totale 32.094


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022182 0 1 19 40 17 7 24 13 19 7 14 21
2022/2023286 18 31 14 22 35 39 10 26 37 11 37 6
2023/2024237 14 19 14 28 8 20 21 12 15 39 12 35
2024/2025950 9 12 19 46 119 62 52 63 185 102 138 143
2025/20263.249 560 534 195 272 154 166 462 184 180 230 77 235
2026/2027252 132 120 0 0 0 0 0 0 0 0 0 0
Totale 5.642