CAGLI, CARLO

CAGLI, CARLO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

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Risultati 1 - 20 di 29 (tempo di esecuzione: 0.039 secondi).
Titolo Data di pubblicazione Autori File
Analysis and modeling of resistive switching statistics 1-gen-2012 CAGLI, CARLOIELMINI, DANIELE +
Cell-based models for the switching statistics of RRAM 1-gen-2011 CAGLI, CARLOIELMINI, DANIELE +
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 1-gen-2007 IELMINI, DANIELECAGLI, CARLOLACAITA, ANDREA LEONARDO +
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 1-gen-2011 NARDI, FEDERICOIELMINI, DANIELECAGLI, CARLO +
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 1-gen-2008 CAGLI, CARLOIELMINI, DANIELENARDI, FEDERICOLACAITA, ANDREA LEONARDO
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 1-gen-2009 RUSSO, UGOIELMINI, DANIELECAGLI, CARLOLACAITA, ANDREA LEONARDO
Filament diffusion model for simulating reset and retention processes in RRAM 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Impact of electrode materials on resistive-switching memory (RRAM) programmning 1-gen-2009 CAGLI, CARLOIELMINI, DANIELE +
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 1-gen-2009 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE
Nanowire-based resistive switching memories: devices, operation and scaling 1-gen-2013 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO +
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 1-gen-2011 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 1-gen-2009 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 1-gen-2011 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Reset instability in pulsed-operated unipolar resistive switching memory 1-gen-2011 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Reset Statistics of NiO-Based Resistive Switching Memories 1-gen-2011 CAGLI, CARLOIELMINI, DANIELE +
Resistance transition in metal oxides induced by electronic threshold switching 1-gen-2009 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 1-gen-2010 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLO
Resistance-dependent switching in NiO-based filamentary RRAM devices 1-gen-2010 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICOLACAITA, ANDREA LEONARDO
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +