CAGLI, CARLO
CAGLI, CARLO
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM"
2007-01-01 U., Russo; Ielmini, Daniele; Cagli, Carlo; Lacaita, ANDREA LEONARDO; S., Spiga; C., Wiemer; M., Perego; M., Fanciulli
Analysis and modeling of resistive switching statistics
2012-01-01 S., Long; Cagli, Carlo; Ielmini, Daniele; M., Liu; J., Suñé
Cell-based models for the switching statistics of RRAM
2011-01-01 S., Long; Cagli, Carlo; Ielmini, Daniele; M., Liu; J., Sune
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
2011-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
2008-01-01 Cagli, Carlo; Ielmini, Daniele; Nardi, Federico; Lacaita, ANDREA LEONARDO
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Russo, Ugo; Ielmini, Daniele; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Filament diffusion model for simulating reset and retention processes in RRAM
2011-01-01 S., Larentis; Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Impact of electrode materials on resistive-switching memory (RRAM) programmning
2009-01-01 U., Russo; Cagli, Carlo; S., Spiga; E., Cianci; Ielmini, Daniele
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Nanowire-based resistive switching memories: devices, operation and scaling
2013-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Y., Zhang
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
2011-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode
2009-01-01 A., Demolliens; Muller, C. H.; D., Deleruyelle; S., Spiga; E., Cianci; M., Fanciulli; Nardi, Federico; Cagli, Carlo; Ielmini, Daniele
Reset current reduction and set-reset instabilities in unipolar NiO RRAM
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Reset instability in pulsed-operated unipolar resistive switching memory
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Reset Statistics of NiO-Based Resistive Switching Memories
2011-01-01 S., Long; Cagli, Carlo; Ielmini, Daniele; M., Liu; J., Suñé
Resistance transition in metal oxides induced by electronic threshold switching
2009-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
Resistance-dependent switching in NiO-based filamentary RRAM devices
2010-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Lacaita, ANDREA LEONARDO
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele