Resistive switching memory (RRAM) attracts a growing research interest as potential high-density Flash replacement. Although several transition metal oxides have shown resistance switching capabilities, NiO is considered one of the most promising materials due to its stable and unipolar switching [1]. However, the scalability and variability of the programming currents and voltages are still a matter of concern. This work provides a comprehensive understanding of set/reset properties of NiO-based RRAM. The relationship between active-filament size and programming current/voltage is studied by physical modeling of thermally-driven reset and field-driven set transitions [2]. The developed models may serve as numerical/analytical design tools for future RRAM devices

Resistance-dependent switching in NiO-based filamentary RRAM devices

IELMINI, DANIELE;CAGLI, CARLO;NARDI, FEDERICO;LACAITA, ANDREA LEONARDO
2010

Abstract

Resistive switching memory (RRAM) attracts a growing research interest as potential high-density Flash replacement. Although several transition metal oxides have shown resistance switching capabilities, NiO is considered one of the most promising materials due to its stable and unipolar switching [1]. However, the scalability and variability of the programming currents and voltages are still a matter of concern. This work provides a comprehensive understanding of set/reset properties of NiO-based RRAM. The relationship between active-filament size and programming current/voltage is studied by physical modeling of thermally-driven reset and field-driven set transitions [2]. The developed models may serve as numerical/analytical design tools for future RRAM devices
International Symposium on Integrated Functionalities
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/574426
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