This work addresses the set and reset mechanisms in NiO-based resistive-switching memory (RRAM) devices, presenting a new physics-based model for RRAM reliability and programming. We show experimental evidence that the set process is initiated by threshold switching, that is a reversible electronic transition to a high conductance state. We develop set/reset models for prediction of programming voltage and time under sweep or pulsed conditions. The speed limitations of RRAMs are then assessed by a detailed study of reset operation in the pulsed regime, showing evidence for over-reset under high-voltage, fast programming conditions (< 1 mu s).

Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction

CAGLI, CARLO;IELMINI, DANIELE;NARDI, FEDERICO;LACAITA, ANDREA LEONARDO
2008

Abstract

This work addresses the set and reset mechanisms in NiO-based resistive-switching memory (RRAM) devices, presenting a new physics-based model for RRAM reliability and programming. We show experimental evidence that the set process is initiated by threshold switching, that is a reversible electronic transition to a high conductance state. We develop set/reset models for prediction of programming voltage and time under sweep or pulsed conditions. The speed limitations of RRAMs are then assessed by a detailed study of reset operation in the pulsed regime, showing evidence for over-reset under high-voltage, fast programming conditions (< 1 mu s).
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST
978-1-4244-2377-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/543005
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