PIROVANO, AGOSTINO
 Distribuzione geografica
Continente #
NA - Nord America 1243
EU - Europa 423
AS - Asia 81
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1749
Nazione #
US - Stati Uniti d'America 1207
AT - Austria 120
UA - Ucraina 91
DE - Germania 61
IT - Italia 51
CA - Canada 35
VN - Vietnam 27
FI - Finlandia 25
FR - Francia 22
CN - Cina 19
NL - Olanda 15
KR - Corea 14
GB - Regno Unito 13
JO - Giordania 13
SE - Svezia 13
IN - India 4
BE - Belgio 3
CH - Svizzera 3
GR - Grecia 3
TW - Taiwan 2
CY - Cipro 1
EU - Europa 1
GL - Groenlandia 1
JP - Giappone 1
RO - Romania 1
RU - Federazione Russa 1
SI - Slovenia 1
ZA - Sudafrica 1
Totale 1749
Città #
Fairfield 174
Chandler 138
Woodbridge 132
Vienna 120
Houston 104
Wilmington 88
Seattle 85
Ashburn 81
Ann Arbor 68
Cambridge 67
Jacksonville 55
Dearborn 34
Ottawa 34
Lawrence 25
Medford 25
Des Moines 15
Amman 13
Amsterdam 13
Dong Ket 12
Beijing 9
Toulouse 9
Aachen 8
San Diego 7
Grenoble 4
Hefei 4
Milan 4
Brussels 3
Indiana 3
Norwalk 3
London 2
Seongnam 2
Seoul 2
Taipei 2
Verona 2
Zurich 2
Berlin 1
Boardman 1
Capua 1
Chennai 1
Duncan 1
Ferrara 1
Framingham 1
Fremont 1
Fuzhou 1
Grafing 1
Hamamatsu 1
Helsinki 1
Horia 1
Jaipur 1
Johannesburg 1
Montreal 1
Mountain View 1
Nanchang 1
New York 1
Nuuk 1
Old Bridge 1
Phoenix 1
Pohang 1
Pontedera 1
Redmond 1
Rome 1
Shanghai 1
Shenzhen 1
Spreitenbach 1
Strovolos 1
Taramani 1
Zhengzhou 1
Totale 1381
Nome #
Assessment of threshold switching dynamics in phase-change chalcogenide memories 123
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 105
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 102
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 96
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique 91
Multiphysics modeling of PCM devices for scaling investigation 83
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 77
Reliability study of phase-change non-volatile memories. 74
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 74
Explaining the dependences of the hole and electron mobilities in Si inversion layers 72
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s 71
2D QM simulation and optimization of decanano non-overlapped MOS devices 69
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics 68
Phase change memory device for multibit storage 68
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 67
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 67
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations 64
Unified mechanisms for structure relaxation and crystallization in phase-change memory 64
Impact of Material Composition on the write performance of Phase-Change Memory Devices 61
Two-dimensional quantum effects in nanoscale MOSFETs 60
Reversing a potential polarity for reading phase change cells to shorten a recovery delay after programming 51
Thresold switching and phase transition numerical models for phase change memory simulations 50
Anomalous cells with low resistance in phase change memory arrays 44
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface 34
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 25
Totale 1760
Categoria #
all - tutte 2913
article - articoli 1766
book - libri 0
conference - conferenze 907
curatela - curatele 0
other - altro 0
patent - brevetti 240
selected - selezionate 0
volume - volumi 0
Totale 5826


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201856 0000 00 00 1014311
2018/2019269 25161 527 111 9487371
2019/2020461 3428733 5659 6240 58244218
2020/2021267 429239 3112 2130 9272727
2021/2022206 638104 167 1511 8122554
2022/2023284 40282625 4032 434 55000
Totale 1760