PIROVANO, AGOSTINO
 Distribuzione geografica
Continente #
NA - Nord America 115
AS - Asia 64
EU - Europa 42
SA - Sud America 5
AF - Africa 1
Totale 227
Nazione #
US - Stati Uniti d'America 114
CN - Cina 49
IT - Italia 27
JP - Giappone 9
BR - Brasile 4
DE - Germania 4
AT - Austria 3
GR - Grecia 3
FR - Francia 2
IR - Iran 2
KR - Corea 2
AE - Emirati Arabi Uniti 1
CA - Canada 1
CL - Cile 1
CZ - Repubblica Ceca 1
GB - Regno Unito 1
HK - Hong Kong 1
NL - Olanda 1
ZA - Sudafrica 1
Totale 227
Città #
Wuhan 33
Buffalo 11
Woodbridge 11
Fairfield 10
Ashburn 9
Houston 9
Seattle 9
Santa Cruz 6
Cambridge 5
Milan 5
Hangzhou 3
Palmas 3
Rome 3
Truckee 3
Vienna 3
Las Vegas 2
Marano di Napoli 2
Shahriyar 2
Wilmington 2
Xian 2
Ann Arbor 1
Auburn 1
Beijing 1
Chicago 1
Clearwater 1
Columbus 1
Council Bluffs 1
Duncan 1
Frankfurt am Main 1
Frosinone 1
Henderson 1
Herndon 1
Jacksonville 1
Los Angeles 1
Mountain View 1
Muizenberg 1
Niagara Falls 1
Norwalk 1
Paris 1
Phoenix 1
Recife 1
Redmond 1
Saint Louis 1
University Park 1
Totale 157
Nome #
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses, file e0c31c09-656f-4599-e053-1705fe0aef77 223
Impact of Material Composition on the write performance of Phase-Change Memory Devices, file e0c31c07-e89d-4599-e053-1705fe0aef77 2
Unified mechanisms for structure relaxation and crystallization in phase-change memory, file e0c31c09-cae0-4599-e053-1705fe0aef77 2
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics, file e0c31c09-cfbd-4599-e053-1705fe0aef77 2
Two-dimensional quantum effects in nanoscale MOSFETs, file e0c31c07-cf83-4599-e053-1705fe0aef77 1
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations, file e0c31c07-d5fa-4599-e053-1705fe0aef77 1
Anomalous cells with low resistance in phase change memory arrays, file e0c31c07-dbd3-4599-e053-1705fe0aef77 1
Statistics of resistance drift due to structural relaxation in phase-change memory arrays, file e0c31c07-e895-4599-e053-1705fe0aef77 1
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories, file e0c31c07-f1fa-4599-e053-1705fe0aef77 1
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress, file e0c31c08-2fc4-4599-e053-1705fe0aef77 1
Assessment of threshold switching dynamics in phase-change chalcogenide memories, file e0c31c08-30ca-4599-e053-1705fe0aef77 1
2D QM simulation and optimization of decanano non-overlapped MOS devices, file e0c31c08-346f-4599-e053-1705fe0aef77 1
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices, file e0c31c08-34ee-4599-e053-1705fe0aef77 1
Thresold switching and phase transition numerical models for phase change memory simulations, file e0c31c09-d79d-4599-e053-1705fe0aef77 1
Totale 239
Categoria #
all - tutte 451
article - articoli 445
book - libri 0
conference - conferenze 6
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 902


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201922 0 0 0 0 0 0 0 0 0 5 8 9
2019/202093 5 3 4 3 8 4 4 2 28 15 8 9
2020/202134 4 0 3 3 2 2 4 5 1 5 5 0
2021/202230 1 6 3 3 1 4 2 1 0 1 8 0
2022/202324 0 4 4 3 2 1 1 2 3 0 3 1
2023/202421 5 1 2 0 2 4 2 2 3 0 0 0
Totale 239