RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

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Titolo Data di pubblicazione Autori File
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Normally-off logic based on resistive switches - Part I: Logic gates 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 1-gen-2015 WANG, ZHONGQIANGAMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOWANG, ZHONGQIANGIELMINI, DANIELE +
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 1-gen-2015 AMBROGIO, STEFANOIELMINI, DANIELE +
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE
Data retention statistics and modelling in HfO<inf>2</inf> resistive switching memories 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
True random number generation by variability of resistive switching in oxide-based devices 1-gen-2015 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Dispositivo e metodo per generare numeri casuali 1-gen-2016 D. IelminiS. BalattiS. Ambrogio
Ultrafast valley depolarization dynamics in monolayer MoS2 1-gen-2016 DAL CONTE, STEFANOBOTTEGONI, FEDERICOPOGNA, EVA ARIANNA AURELIAAMBROGIO, STEFANOBARGIGIA, ILARIAD'ANDREA, COSIMOCICCACCI, FRANCOCERULLO, GIULIO NICOLAFINAZZI, MARCO +
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 1-gen-2016 AMBROGIO, STEFANOBALATTI, SIMONEMILO, VALERIOCARBONI, ROBERTOIELMINI, DANIELE +
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 1-gen-2016 Milo, V.Pedretti, G.Carboni, R.Ambrogio, S.Ielmini, D. +
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 1-gen-2016 Wang, ZhongqiangAmbrogio, StefanoBalatti, SimoneIelmini, Daniele +
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 1-gen-2016 BALATTI, SIMONEAMBROGIO, STEFANOCARBONI, ROBERTOMILO, VALERIOWANG, ZHONGQIANGIELMINI, DANIELE +
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 1-gen-2016 Ambrogio, S.Balatti, S.Milo, V.Carboni, R.Wang, Z.Ielmini, D. +
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 1-gen-2016 Carboni, R.Ambrogio, S.Ielmini, D. +
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 1-gen-2016 AMBROGIO, STEFANOCIOCCHINI, NICOLALAUDATO, MARIOMILO, VALERIOPIROVANO, AGOSTINOFANTINI, PAOLOIELMINI, DANIELE
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 1-gen-2016 Ambrogio, StefanoMilo, ValerioWang, ZhongqiangBalatti, SimoneIelmini, Daniele
Mostrati risultati da 21 a 40 di 49
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