AMBROSI, ELIA
 Distribuzione geografica
Continente #
NA - Nord America 2.346
EU - Europa 1.365
AS - Asia 681
SA - Sud America 116
AF - Africa 49
Continente sconosciuto - Info sul continente non disponibili 31
OC - Oceania 5
Totale 4.593
Nazione #
US - Stati Uniti d'America 2.278
RU - Federazione Russa 489
IT - Italia 479
SG - Singapore 227
CN - Cina 157
BR - Brasile 101
VN - Vietnam 75
GB - Regno Unito 62
FR - Francia 60
CA - Canada 51
DE - Germania 51
KR - Corea 38
FI - Finlandia 37
JP - Giappone 35
SE - Svezia 34
MA - Marocco 33
AT - Austria 31
NL - Olanda 29
HK - Hong Kong 25
JO - Giordania 22
ES - Italia 21
IE - Irlanda 19
ID - Indonesia 16
IN - India 15
IQ - Iraq 9
MX - Messico 9
SA - Arabia Saudita 9
UA - Ucraina 9
TW - Taiwan 8
BD - Bangladesh 7
ZA - Sudafrica 7
BE - Belgio 6
TR - Turchia 6
UZ - Uzbekistan 6
AR - Argentina 5
PL - Polonia 5
GR - Grecia 4
LT - Lituania 4
PH - Filippine 4
AU - Australia 3
EG - Egitto 3
HU - Ungheria 3
LK - Sri Lanka 3
LU - Lussemburgo 3
PK - Pakistan 3
TN - Tunisia 3
AM - Armenia 2
BY - Bielorussia 2
CH - Svizzera 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
EE - Estonia 2
IL - Israele 2
JM - Giamaica 2
LV - Lettonia 2
MY - Malesia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PA - Panama 2
RO - Romania 2
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CL - Cile 1
CR - Costa Rica 1
CY - Cipro 1
DK - Danimarca 1
GE - Georgia 1
HR - Croazia 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MU - Mauritius 1
OM - Oman 1
PE - Perù 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SR - Suriname 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.563
Città #
Ashburn 384
Milan 371
Fairfield 218
Chandler 187
San Jose 173
Santa Clara 157
Singapore 142
Wilmington 97
Woodbridge 96
Seattle 82
Houston 77
Moscow 64
Cambridge 59
Los Angeles 59
Beijing 42
Dallas 41
The Dalles 41
Council Bluffs 38
Seoul 37
Ottawa 31
Tokyo 31
Ann Arbor 29
Helsinki 29
Vienna 28
London 26
Boardman 24
Lawrence 23
Medford 23
Amman 22
Kenitra 22
Hong Kong 21
Dearborn 20
Hanoi 20
Ho Chi Minh City 20
New York 20
Dublin 19
Lauterbourg 18
Frankfurt am Main 16
Washington 15
Norwalk 14
Jakarta 13
Málaga 13
Phoenix 12
São Paulo 11
Orem 10
Atlanta 9
Casablanca 9
Chicago 9
Redmond 9
San Diego 9
Shanghai 9
Rome 8
Denver 7
Taipei 7
Brooklyn 6
Chennai 6
Da Nang 6
Guangzhou 6
Munich 6
Redwood City 6
Tianjin 6
Buffalo 5
Johannesburg 5
Montreal 5
Tashkent 5
Aachen 4
Bologna 4
Delft 4
Dong Ket 4
Gif-sur-yvette 4
Jeddah 4
Pittsburgh 4
Stockholm 4
Toronto 4
Turku 4
Warsaw 4
Wuhan 4
Ankara 3
Bonndorf 3
Boydton 3
Calgary 3
City of London 3
Colombo 3
Erbil 3
Falls Church 3
Ferrara 3
Fremont 3
Kent 3
Kraainem 3
Lappeenranta 3
Manchester 3
Newark 3
Querétaro 3
Rio de Janeiro 3
Auburn 2
Aurora 2
Baghdad 2
Boston 2
Brantford 2
Brussels 2
Totale 3.144
Nome #
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 365
Logic Computing with Stateful Neural Networks of Resistive Switches 215
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 212
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 210
Solving matrix equations in one step with cross-point resistive arrays 206
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 201
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 200
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 199
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 195
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 191
High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory 188
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 187
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 181
Time Complexity of In-Memory Solution of Linear Systems 179
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 179
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 179
A volatile RRAM synapse for neuromorphic computing 176
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) 172
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 168
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion 164
In‐Memory Eigenvector Computation in Time O (1) 160
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 158
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 155
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 153
Totale 4.593
Categoria #
all - tutte 13.282
article - articoli 7.716
book - libri 0
conference - conferenze 5.566
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.564


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022167 0 9 15 9 26 12 8 15 13 10 26 24
2022/2023367 42 29 38 36 43 42 1 30 65 16 19 6
2023/2024223 7 25 6 21 23 42 11 28 2 33 4 21
2024/2025549 7 6 11 5 136 72 8 57 66 34 89 58
2025/20262.290 420 291 74 124 198 98 326 88 208 230 108 125
2026/202769 67 2 0 0 0 0 0 0 0 0 0 0
Totale 4.593