RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

AMBROSI, ELIA
 Distribuzione geografica
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Continente #
NA - Nord America 2.288
EU - Europa 1.211
AS - Asia 671
SA - Sud America 112
AF - Africa 49
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.337
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Nazione #
US - Stati Uniti d'America 2.224
RU - Federazione Russa 489
IT - Italia 326
SG - Singapore 226
CN - Cina 157
BR - Brasile 98
VN - Vietnam 71
GB - Regno Unito 62
FR - Francia 60
DE - Germania 51
CA - Canada 49
FI - Finlandia 37
KR - Corea 37
JP - Giappone 35
SE - Svezia 34
MA - Marocco 33
AT - Austria 31
NL - Olanda 29
HK - Hong Kong 25
JO - Giordania 22
ES - Italia 20
IE - Irlanda 19
ID - Indonesia 16
IN - India 15
IQ - Iraq 9
MX - Messico 9
SA - Arabia Saudita 9
UA - Ucraina 9
TW - Taiwan 8
ZA - Sudafrica 7
BE - Belgio 6
TR - Turchia 6
UZ - Uzbekistan 6
AR - Argentina 5
PL - Polonia 5
GR - Grecia 4
LT - Lituania 4
PH - Filippine 4
AU - Australia 3
BD - Bangladesh 3
EG - Egitto 3
HU - Ungheria 3
LK - Sri Lanka 3
LU - Lussemburgo 3
PK - Pakistan 3
TN - Tunisia 3
AM - Armenia 2
BY - Bielorussia 2
CH - Svizzera 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EE - Estonia 2
IL - Israele 2
LV - Lettonia 2
MY - Malesia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PA - Panama 2
RO - Romania 2
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CL - Cile 1
CR - Costa Rica 1
CY - Cipro 1
DK - Danimarca 1
EC - Ecuador 1
GE - Georgia 1
HR - Croazia 1
JM - Giamaica 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MU - Mauritius 1
OM - Oman 1
PE - Perù 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SR - Suriname 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.337
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Città #
Ashburn 371
Milan 245
Fairfield 218
Chandler 187
San Jose 170
Santa Clara 153
Singapore 142
Wilmington 96
Woodbridge 96
Seattle 82
Houston 77
Moscow 64
Cambridge 59
Los Angeles 59
Beijing 42
Dallas 41
The Dalles 41
Council Bluffs 37
Seoul 37
Ottawa 31
Tokyo 31
Ann Arbor 29
Helsinki 29
Vienna 28
London 26
Boardman 23
Lawrence 23
Medford 23
Amman 22
Kenitra 22
Hong Kong 21
Dearborn 20
Ho Chi Minh City 20
Dublin 19
New York 19
Lauterbourg 18
Frankfurt am Main 16
Hanoi 16
Washington 15
Norwalk 14
Jakarta 13
Málaga 13
Phoenix 12
São Paulo 11
Orem 10
Casablanca 9
Redmond 9
San Diego 9
Shanghai 9
Chicago 8
Denver 7
Taipei 7
Atlanta 6
Chennai 6
Da Nang 6
Guangzhou 6
Munich 6
Redwood City 6
Tianjin 6
Brooklyn 5
Buffalo 5
Johannesburg 5
Montreal 5
Tashkent 5
Aachen 4
Delft 4
Dong Ket 4
Gif-sur-yvette 4
Jeddah 4
Pittsburgh 4
Stockholm 4
Toronto 4
Turku 4
Warsaw 4
Wuhan 4
Ankara 3
Bologna 3
Bonndorf 3
City of London 3
Colombo 3
Erbil 3
Falls Church 3
Ferrara 3
Fremont 3
Kent 3
Kraainem 3
Lappeenranta 3
Manchester 3
Newark 3
Querétaro 3
Rio de Janeiro 3
Baghdad 2
Boston 2
Brantford 2
Brussels 2
Bến Cầu 2
Campinas 2
Canoas 2
Cerquilho 2
Dhaka 2
Totale 2.976
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Nome #
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 307
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 211
Logic Computing with Stateful Neural Networks of Resistive Switches 207
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 206
Solving matrix equations in one step with cross-point resistive arrays 203
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 198
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 195
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 191
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 190
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 188
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 183
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 178
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 178
Time Complexity of In-Memory Solution of Linear Systems 176
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 173
A volatile RRAM synapse for neuromorphic computing 166
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) 161
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion 158
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 158
In‐Memory Eigenvector Computation in Time O (1) 158
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 153
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 153
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 150
High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory 126
Totale 4.367
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Categoria #
all - tutte 12.626
article - articoli 7.283
book - libri 0
conference - conferenze 5.343
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.252
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202146 0 0 0 0 0 0 0 0 0 0 23 23
2021/2022185 18 9 15 9 26 12 8 15 13 10 26 24
2022/2023367 42 29 38 36 43 42 1 30 65 16 19 6
2023/2024223 7 25 6 21 23 42 11 28 2 33 4 21
2024/2025549 7 6 11 5 136 72 8 57 66 34 89 58
2025/20262.133 420 291 74 124 198 98 326 88 208 230 76 0
Totale 4.367