AMBROSI, ELIA
 Distribuzione geografica
Continente #
NA - Nord America 1.873
EU - Europa 944
AS - Asia 387
SA - Sud America 94
AF - Africa 23
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.327
Nazione #
US - Stati Uniti d'America 1.819
RU - Federazione Russa 488
SG - Singapore 152
IT - Italia 109
CN - Cina 105
BR - Brasile 84
GB - Regno Unito 54
DE - Germania 47
CA - Canada 44
FR - Francia 40
FI - Finlandia 36
SE - Svezia 33
VN - Vietnam 30
AT - Austria 29
NL - Olanda 28
JO - Giordania 22
IE - Irlanda 19
ES - Italia 18
ID - Indonesia 14
HK - Hong Kong 10
MA - Marocco 10
UA - Ucraina 9
IN - India 7
IQ - Iraq 6
MX - Messico 6
JP - Giappone 5
UZ - Uzbekistan 5
ZA - Sudafrica 5
AR - Argentina 4
BE - Belgio 4
PL - Polonia 4
SA - Arabia Saudita 4
TW - Taiwan 4
AU - Australia 3
GR - Grecia 3
HU - Ungheria 3
LK - Sri Lanka 3
LT - Lituania 3
LU - Lussemburgo 3
TN - Tunisia 3
TR - Turchia 3
AM - Armenia 2
BD - Bangladesh 2
BY - Bielorussia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EE - Estonia 2
EG - Egitto 2
LV - Lettonia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PK - Pakistan 2
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BH - Bahrain 1
CH - Svizzera 1
CI - Costa d'Avorio 1
DK - Danimarca 1
EC - Ecuador 1
GE - Georgia 1
IL - Israele 1
JM - Giamaica 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MU - Mauritius 1
MY - Malesia 1
NO - Norvegia 1
OM - Oman 1
PE - Perù 1
PH - Filippine 1
PR - Porto Rico 1
PY - Paraguay 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.327
Città #
Ashburn 291
Fairfield 218
Chandler 187
Santa Clara 148
Wilmington 96
Woodbridge 96
Singapore 91
Seattle 82
Houston 77
Moscow 64
Cambridge 59
Los Angeles 43
Milan 39
Beijing 36
Ottawa 31
Ann Arbor 29
Dallas 29
Helsinki 28
Vienna 26
London 24
Boardman 23
Council Bluffs 23
Lawrence 23
Medford 23
Amman 22
Dearborn 20
Dublin 19
Norwalk 14
Frankfurt am Main 13
Jakarta 13
Málaga 13
New York 12
Washington 12
Phoenix 10
Redmond 9
San Diego 9
São Paulo 9
Casablanca 8
Ho Chi Minh City 8
Chicago 7
Hong Kong 7
Hanoi 6
Munich 6
Redwood City 6
Shanghai 6
Brooklyn 5
Buffalo 5
Tianjin 5
Aachen 4
Delft 4
Denver 4
Dong Ket 4
Gif-sur-yvette 4
Orem 4
Pittsburgh 4
Stockholm 4
Tashkent 4
Tokyo 4
Turku 4
Bologna 3
Bonndorf 3
Colombo 3
Erbil 3
Falls Church 3
Ferrara 3
Fremont 3
Guangzhou 3
Johannesburg 3
Kent 3
Kraainem 3
Lappeenranta 3
Montreal 3
Querétaro 3
Rio de Janeiro 3
Taipei 3
Toronto 3
Warsaw 3
Wuhan 3
Boston 2
Bến Cầu 2
Campinas 2
Canoas 2
Cerquilho 2
Chennai 2
City of London 2
Dhaka 2
Graz 2
Hesperange 2
Hounslow 2
Jeddah 2
Lucca 2
Lucknow 2
Maringá 2
Marília 2
Milwaukee 2
Minsk 2
Nanjing 2
Newark 2
Nizhniy Novgorod 2
Olinda 2
Totale 2.175
Nome #
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 185
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 180
Solving matrix equations in one step with cross-point resistive arrays 170
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 167
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 166
Logic Computing with Stateful Neural Networks of Resistive Switches 166
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 159
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 151
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 150
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 149
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 148
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 147
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 143
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 142
Time Complexity of In-Memory Solution of Linear Systems 142
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion 133
In‐Memory Eigenvector Computation in Time O (1) 128
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 127
A volatile RRAM synapse for neuromorphic computing 126
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 122
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) 120
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 119
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 116
Totale 3.356
Categoria #
all - tutte 10.958
article - articoli 6.245
book - libri 0
conference - conferenze 4.713
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.916


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021188 0 0 0 0 0 23 5 23 25 66 23 23
2021/2022185 18 9 15 9 26 12 8 15 13 10 26 24
2022/2023367 42 29 38 36 43 42 1 30 65 16 19 6
2023/2024223 7 25 6 21 23 42 11 28 2 33 4 21
2024/2025549 7 6 11 5 136 72 8 57 66 34 89 58
2025/20261.122 420 291 74 124 198 15 0 0 0 0 0 0
Totale 3.356