RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

RICCI, SAVERIO
 Distribuzione geografica
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Continente #
NA - Nord America 291
EU - Europa 197
AS - Asia 82
AF - Africa 7
SA - Sud America 3
Totale 580
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Nazione #
US - Stati Uniti d'America 289
IT - Italia 97
FI - Finlandia 35
CN - Cina 28
SG - Singapore 26
AT - Austria 14
ID - Indonesia 12
DE - Germania 10
ES - Italia 10
JO - Giordania 9
BJ - Benin 6
IE - Irlanda 6
VN - Vietnam 6
GB - Regno Unito 5
NL - Olanda 5
SE - Svezia 5
FR - Francia 4
BR - Brasile 3
BE - Belgio 2
CA - Canada 2
CH - Svizzera 2
RU - Federazione Russa 2
CI - Costa d'Avorio 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 580
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Città #
Chandler 65
Santa Clara 50
Milan 37
Helsinki 22
Fairfield 19
Boardman 18
Ashburn 16
Singapore 16
Lappeenranta 13
Vienna 13
Jakarta 12
Amman 9
Woodbridge 9
Málaga 8
New York 7
Rome 7
Cambridge 6
Cotonou 6
Dublin 6
Prato 6
Washington 6
Amsterdam 5
Ann Arbor 5
Seattle 5
Lawrence 4
Medford 4
Houston 3
Natal 3
Bonndorf 2
Brussels 2
Frankfurt am Main 2
Las Palmas de Gran Canaria 2
London 2
Moscow 2
Nuremberg 2
Redmond 2
Rovagnate 2
Shanghai 2
Trento 2
Wilmington 2
Zhengzhou 2
Abidjan 1
Acquarica Del Capo 1
Bari 1
Bergamo 1
Bern 1
Bologna 1
Bresso 1
East Los Angeles 1
Fisciano 1
Fremont 1
La Canada Flintridge 1
Los Angeles 1
Massa E Cozzile 1
Montreal 1
Norwalk 1
Oxford 1
Pavia 1
Pittsburgh 1
Ravello 1
Rockville 1
San Francisco 1
San Vitaliano 1
Segrate 1
Serravalle Scrivia 1
Siena 1
Toronto 1
Trescore Balneario 1
Wuhan 1
Zurich 1
Totale 435
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Nome #
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene-Based Seeding Promoters 130
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 84
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks 51
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 45
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity 44
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 41
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 30
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 24
A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training 21
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 19
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories 19
Development of Crosspoint Memory Arrays for Neuromorphic Computing 18
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering 16
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 12
Tunable synaptic working memory with volatile memristive devices 12
Memristive tonotopic mapping with volatile resistive switching memory devices 11
Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences 10
Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network 9
Totale 596
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Categoria #
all - tutte 3.634
article - articoli 2.535
book - libri 0
conference - conferenze 1.018
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 81
Totale 7.268
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202179 0 0 6 3 0 20 2 2 4 35 0 7
2021/202240 5 3 3 3 6 2 2 6 0 0 5 5
2022/2023170 9 20 19 17 23 16 2 12 27 8 8 9
2023/2024170 11 15 5 9 9 16 8 15 2 43 12 25
2024/2025137 3 5 8 33 88 0 0 0 0 0 0 0
Totale 596