RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

RICCI, SAVERIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.386
AS - Asia 1.071
EU - Europa 1.038
SA - Sud America 146
AF - Africa 60
Continente sconosciuto - Info sul continente non disponibili 27
OC - Oceania 1
Totale 3.729
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Nazione #
US - Stati Uniti d'America 1.335
RU - Federazione Russa 496
SG - Singapore 349
CN - Cina 306
IT - Italia 256
BR - Brasile 116
VN - Vietnam 114
KR - Corea 81
HK - Hong Kong 51
FI - Finlandia 47
JP - Giappone 45
FR - Francia 43
DE - Germania 39
GB - Regno Unito 38
BD - Bangladesh 37
NL - Olanda 32
CA - Canada 29
MA - Marocco 25
AT - Austria 20
ID - Indonesia 18
AR - Argentina 15
IN - India 14
TW - Taiwan 14
MX - Messico 13
ES - Italia 12
ZA - Sudafrica 10
JO - Giordania 9
BE - Belgio 8
CI - Costa d'Avorio 8
IE - Irlanda 8
IQ - Iraq 8
SE - Svezia 8
PL - Polonia 7
BJ - Benin 6
LT - Lituania 6
CO - Colombia 4
EC - Ecuador 4
PT - Portogallo 4
UZ - Uzbekistan 4
CH - Svizzera 3
CR - Costa Rica 3
PH - Filippine 3
SA - Arabia Saudita 3
TR - Turchia 3
UA - Ucraina 3
AE - Emirati Arabi Uniti 2
DZ - Algeria 2
GR - Grecia 2
JM - Giamaica 2
NP - Nepal 2
PE - Perù 2
PK - Pakistan 2
SN - Senegal 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
VE - Venezuela 2
AL - Albania 1
AU - Australia 1
BW - Botswana 1
BY - Bielorussia 1
CD - Congo 1
ET - Etiopia 1
GA - Gabon 1
GE - Georgia 1
GY - Guiana 1
IS - Islanda 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LV - Lettonia 1
MU - Mauritius 1
NO - Norvegia 1
OM - Oman 1
RO - Romania 1
SV - El Salvador 1
TH - Thailandia 1
TN - Tunisia 1
VG - Isole Vergini Britanniche 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.703
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Città #
Ashburn 255
Singapore 235
San Jose 135
Santa Clara 114
Milan 102
Hefei 100
Moscow 67
Seoul 67
Chandler 65
Dallas 63
Hong Kong 49
Council Bluffs 48
Tokyo 45
Los Angeles 39
Ho Chi Minh City 37
Beijing 36
Kent 31
Buffalo 28
Boardman 26
The Dalles 26
Hanoi 25
Helsinki 25
London 23
New York 23
North Charleston 22
Fairfield 19
Lappeenranta 17
Lauterbourg 17
Rome 17
Vienna 17
Frankfurt am Main 16
Jakarta 14
Kenitra 13
Las Vegas 13
Amsterdam 12
Montreal 12
Chicago 11
Nuremberg 11
Figino 10
Salt Lake City 10
São Paulo 10
Amman 9
Casablanca 9
Taipei 9
Woodbridge 9
Abidjan 8
Boston 8
Brescia 8
Brussels 8
Dublin 8
Málaga 8
Philadelphia 8
Washington 8
East Aurora 7
Frisco 7
Phoenix 7
Seattle 7
Ann Arbor 6
Atlanta 6
Bologna 6
Brooklyn 6
Cambridge 6
Cotonou 6
Mexico City 6
Prato 6
Shanghai 6
Ulsan 6
Warsaw 6
Denver 5
Dhaka 5
Haiphong 5
Hangzhou 5
Redondo Beach 5
Toronto 5
Turku 5
Baghdad 4
Charlotte 4
Chennai 4
Fontenay-aux-Roses 4
Guangzhou 4
Houston 4
Johannesburg 4
Lawrence 4
Medford 4
Naples 4
Paris 4
Pittsburgh 4
Wuhan 4
Aracaju 3
Augusta 3
Belo Horizonte 3
Brasília 3
Buenos Aires 3
Calgary 3
Columbus 3
Da Nang 3
Florence 3
Glasgow 3
Greenville 3
Hillsboro 3
Totale 2.222
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Nome #
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene-Based Seeding Promoters 290
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 220
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 220
3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing 214
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 212
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks 211
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity 199
A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training 180
Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network 168
Memristive tonotopic mapping with volatile resistive switching memory devices 164
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 163
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 162
Development of Crosspoint Memory Arrays for Neuromorphic Computing 161
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 158
Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences 157
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 150
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories 149
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering 139
Tunable synaptic working memory with volatile memristive devices 133
High-Density Multilevel 3D Vertical Resistive Switching Memory (VRRAM) for Massively Parallel in-Memory Computing 129
Fully-Parallel 2-Terminal Update Scheme for Tensor Product in ECRAM Arrays 79
3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing 47
Neuromorphic hardware based on memristive nanodevices for seizure detection and recovery 24
Totale 3.729
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Categoria #
all - tutte 10.187
article - articoli 6.809
book - libri 0
conference - conferenze 2.995
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 383
Totale 20.374
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202235 0 3 3 3 6 2 2 6 0 0 5 5
2022/2023170 9 20 19 17 23 16 2 12 27 8 8 9
2023/2024170 11 15 5 9 9 16 8 15 2 43 12 25
2024/2025622 3 5 8 33 99 68 24 51 96 53 86 96
2025/20262.504 435 398 177 211 187 107 308 136 136 169 81 159
2026/2027144 85 59 0 0 0 0 0 0 0 0 0 0
Totale 3.729