FARRONATO, MATTEO
 Distribuzione geografica
Continente #
NA - Nord America 224
EU - Europa 140
AS - Asia 43
SA - Sud America 7
AF - Africa 4
Totale 418
Nazione #
US - Stati Uniti d'America 222
IT - Italia 67
FI - Finlandia 20
SG - Singapore 19
CN - Cina 13
ES - Italia 10
AT - Austria 8
JO - Giordania 8
BR - Brasile 7
FR - Francia 6
IE - Irlanda 6
SE - Svezia 6
BJ - Benin 4
DE - Germania 4
NL - Olanda 4
CH - Svizzera 3
GB - Regno Unito 3
RU - Federazione Russa 3
SA - Arabia Saudita 3
CA - Canada 2
Totale 418
Città #
Chandler 56
Santa Clara 38
Milan 24
Helsinki 18
Ashburn 16
Fairfield 15
Boardman 14
Singapore 13
Amman 8
Málaga 8
Vienna 7
Dublin 6
Prato 6
Seattle 6
Woodbridge 5
Amsterdam 4
Cotonou 4
Houston 4
Americana 3
Cambridge 3
Lawrence 3
Legnano 3
Medford 3
Natal 3
Rome 3
Wilmington 3
At Tuwal 2
Fisciano 2
Lappeenranta 2
Las Palmas de Gran Canaria 2
New York 2
Nuremberg 2
Rovagnate 2
San Diego 2
Shanghai 2
Trento 2
Washington 2
Acquarica Del Capo 1
Ann Arbor 1
Beijing 1
Bergamo 1
Bresso 1
Dezhou 1
Formigine 1
Frankfurt am Main 1
London 1
Lugano 1
Lyon 1
Makkah 1
Massa E Cozzile 1
Montreal 1
Norwalk 1
Padova 1
Pavia 1
Perm 1
Pittsburgh 1
Ravello 1
Redmond 1
San Vitaliano 1
Serravalle Scrivia 1
Siena 1
São Paulo 1
Taegerig 1
Toronto 1
Zurich 1
Totale 326
Nome #
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 83
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 54
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 43
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 39
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 37
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 30
In-memory computing with emerging memory devices: Status and outlook 24
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 22
Hybrid 2D-CMOS microchips for memristive applications 21
Redox memristors with volatile threshold switching behavior for neuromorphic computing 19
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 17
Development of Crosspoint Memory Arrays for Neuromorphic Computing 17
In-Memory Computing for Machine Learning and Deep Learning 13
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 11
Totale 430
Categoria #
all - tutte 2.922
article - articoli 2.551
book - libri 0
conference - conferenze 294
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 77
Totale 5.844


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202133 0 0 0 0 0 20 0 0 3 9 0 1
2021/202238 2 9 4 4 7 1 1 3 1 0 3 3
2022/2023135 6 13 9 25 19 13 1 5 27 11 3 3
2023/2024137 5 13 8 11 4 16 4 13 2 27 15 19
2024/202587 2 9 5 18 53 0 0 0 0 0 0 0
Totale 430