RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

FARRONATO, MATTEO
 Distribuzione geografica
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Continente #
EU - Europa 1.357
NA - Nord America 1.322
AS - Asia 1.078
SA - Sud America 160
AF - Africa 56
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 3.975
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Nazione #
US - Stati Uniti d'America 1.280
IT - Italia 595
RU - Federazione Russa 504
SG - Singapore 359
CN - Cina 269
BR - Brasile 130
VN - Vietnam 104
KR - Corea 84
HK - Hong Kong 68
JP - Giappone 54
FR - Francia 44
BD - Bangladesh 41
GB - Regno Unito 41
NL - Olanda 32
FI - Finlandia 30
DE - Germania 29
MA - Marocco 26
CA - Canada 25
ID - Indonesia 17
AT - Austria 16
TW - Taiwan 14
ES - Italia 13
AR - Argentina 12
IN - India 12
SE - Svezia 10
IQ - Iraq 9
ZA - Sudafrica 9
CI - Costa d'Avorio 8
JO - Giordania 8
MX - Messico 8
SA - Arabia Saudita 8
CH - Svizzera 7
EC - Ecuador 7
IE - Irlanda 7
PL - Polonia 7
LT - Lituania 6
PH - Filippine 6
UZ - Uzbekistan 6
TR - Turchia 5
BJ - Benin 4
JM - Giamaica 4
PT - Portogallo 3
TN - Tunisia 3
UA - Ucraina 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
BE - Belgio 2
CO - Colombia 2
CR - Costa Rica 2
GR - Grecia 2
NI - Nicaragua 2
NP - Nepal 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CL - Cile 1
DZ - Algeria 1
EE - Estonia 1
EG - Egitto 1
GA - Gabon 1
GE - Georgia 1
IL - Israele 1
KE - Kenya 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MU - Mauritius 1
OM - Oman 1
PE - Perù 1
RO - Romania 1
SN - Senegal 1
SR - Suriname 1
SV - El Salvador 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.975
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Città #
Milan 451
Ashburn 245
Singapore 227
San Jose 151
Santa Clara 102
Hefei 96
Seoul 73
Hong Kong 62
Moscow 62
Dallas 59
Chandler 56
Tokyo 49
Buffalo 43
Council Bluffs 41
Los Angeles 41
Ho Chi Minh City 36
Beijing 33
Kent 28
Boardman 27
London 27
Hanoi 26
East Aurora 24
New York 23
North Charleston 21
The Dalles 20
Helsinki 19
Kenitra 18
Lauterbourg 18
Fairfield 15
Vienna 13
Atlanta 12
Frankfurt am Main 12
Jakarta 12
Las Vegas 12
São Paulo 12
Rome 11
Amsterdam 10
Taipei 10
Frisco 9
Montreal 9
Abidjan 8
Amman 8
Boston 8
Figino 8
Málaga 8
Nuremberg 8
Casablanca 7
Chicago 7
Dublin 7
Houston 7
Seattle 7
Denver 6
Orem 6
Prato 6
Turin 6
Ulsan 6
Brasília 5
Brescia 5
Brooklyn 5
Da Nang 5
Hillsboro 5
Lappeenranta 5
Monza 5
Philadelphia 5
Pittsburgh 5
Tashkent 5
Turku 5
Warsaw 5
Woodbridge 5
Cambridge 4
Campinas 4
Cape Town 4
Cotonou 4
Fontenay-aux-Roses 4
Haiphong 4
Mexico City 4
Munich 4
Phoenix 4
Rio de Janeiro 4
Shanghai 4
Shenzhen 4
Stockholm 4
Washington 4
Americana 3
Aracaju 3
Auburn 3
Baghdad 3
Bari 3
Boydton 3
Charleston 3
Charlotte 3
Chennai 3
Dhaka 3
Erbil 3
Florence 3
Glasgow 3
Guangzhou 3
Guayaquil 3
Huế 3
Hải Dương 3
Totale 2.500
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Nome #
Redox memristors with volatile threshold switching behavior for neuromorphic computing 330
In-memory computing with emerging memory devices: Status and outlook 223
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 217
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 212
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 211
3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing 201
High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory 181
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 178
Seizure detection via reservoir computing in MoS2-based charge trap memory devices 167
MEMORY ARCHITECTURES WITH AMBIPOLAR SEMICONDUCTOR CHANNELS 167
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 167
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 162
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 160
Development of Crosspoint Memory Arrays for Neuromorphic Computing 156
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 155
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 148
Emerging Materials and Computing Paradigms for Temporal Signal Analysis 148
Low-energy, high-accuracy convolutional network inference in 3D crosspoint (3DXP) arrays 143
Hybrid 2D-CMOS microchips for memristive applications 133
High-Density Multilevel 3D Vertical Resistive Switching Memory (VRRAM) for Massively Parallel in-Memory Computing 124
In-Memory Computing for Machine Learning and Deep Learning 123
Fully-Parallel 2-Terminal Update Scheme for Tensor Product in ECRAM Arrays 71
Bio-Inspired Computing with Emerging Devices: Bridging 2D Materials and Neuromorphic Architectures 67
Scaling of Nonvolatile Memory (NVM) Technologies for Storage and Computing in Edge AI 56
3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing 43
3-D Crosspoint (3DXP) Memory Arrays With Subthreshold Operation for Low-Energy, High-Accuracy Neural Network Accelerators 37
Technology Roadmap of Bioinspired Computing Hardware 23
Experimental and numerical demonstration of threshold voltage asymmetry and synaptic plasticity in MoS2 transistors 5
Totale 4.008
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Categoria #
all - tutte 9.799
article - articoli 7.607
book - libri 0
conference - conferenze 1.544
curatela - curatele 0
other - altro 0
patent - brevetti 286
selected - selezionate 0
volume - volumi 362
Totale 19.598
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202238 2 9 4 4 7 1 1 3 1 0 3 3
2022/2023135 6 13 9 25 19 13 1 5 27 11 3 3
2023/2024137 5 13 8 11 4 16 4 13 2 27 15 19
2024/2025576 2 9 5 18 83 53 29 48 79 36 88 126
2025/20262.986 460 409 167 206 165 141 352 142 271 265 133 275
2026/2027103 103 0 0 0 0 0 0 0 0 0 0 0
Totale 4.008