RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BRICALLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 2.355
EU - Europa 1.168
AS - Asia 708
SA - Sud America 107
AF - Africa 53
OC - Oceania 7
Totale 4.398
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Nazione #
US - Stati Uniti d'America 2.289
RU - Federazione Russa 483
IT - Italia 276
SG - Singapore 236
CN - Cina 166
BR - Brasile 92
VN - Vietnam 77
GB - Regno Unito 61
FR - Francia 60
DE - Germania 54
CA - Canada 50
AT - Austria 39
KR - Corea 39
MA - Marocco 38
HK - Hong Kong 37
JP - Giappone 37
FI - Finlandia 36
NL - Olanda 33
SE - Svezia 27
JO - Giordania 23
ID - Indonesia 21
ES - Italia 20
IE - Irlanda 19
IN - India 15
MX - Messico 11
UA - Ucraina 9
PL - Polonia 8
SA - Arabia Saudita 8
TW - Taiwan 8
AR - Argentina 7
ZA - Sudafrica 7
BE - Belgio 6
IQ - Iraq 6
LT - Lituania 6
UZ - Uzbekistan 5
AU - Australia 4
BD - Bangladesh 4
CH - Svizzera 4
GR - Grecia 4
PH - Filippine 4
HU - Ungheria 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
TN - Tunisia 3
TR - Turchia 3
BY - Bielorussia 2
CO - Colombia 2
DK - Danimarca 2
EC - Ecuador 2
EE - Estonia 2
EG - Egitto 2
IL - Israele 2
LK - Sri Lanka 2
LV - Lettonia 2
MY - Malesia 2
NO - Norvegia 2
PA - Panama 2
PK - Pakistan 2
RO - Romania 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BJ - Benin 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CL - Cile 1
CY - Cipro 1
CZ - Repubblica Ceca 1
GE - Georgia 1
HN - Honduras 1
HR - Croazia 1
IR - Iran 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MM - Myanmar 1
NI - Nicaragua 1
OM - Oman 1
PE - Perù 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
VE - Venezuela 1
Totale 4.398
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Città #
Ashburn 382
Fairfield 218
Milan 183
Chandler 177
San Jose 165
Santa Clara 155
Singapore 153
Woodbridge 94
Wilmington 93
Seattle 83
Houston 76
Los Angeles 61
Moscow 61
Cambridge 58
Dallas 47
The Dalles 46
Beijing 43
Seoul 38
Council Bluffs 36
Vienna 35
Hong Kong 31
Ottawa 28
Tokyo 28
Ann Arbor 27
Ho Chi Minh City 27
Boardman 25
Helsinki 25
London 24
Amman 23
Kenitra 23
Lawrence 21
Dearborn 20
Medford 20
New York 20
Dublin 19
Lauterbourg 18
Buffalo 16
Hanoi 16
Jakarta 16
Norwalk 15
Frankfurt am Main 14
Casablanca 13
Hefei 13
Málaga 13
Phoenix 13
Redmond 13
Washington 13
Orem 11
Redwood City 10
São Paulo 10
Atlanta 9
San Diego 9
Shanghai 9
East Aurora 7
Montreal 7
Taipei 7
Chennai 6
Chicago 6
Denver 6
Duncan 6
Johannesburg 6
Kent 6
Boston 5
Brooklyn 5
Da Nang 5
Guangzhou 5
Lappeenranta 5
Mexico City 5
Tianjin 5
Turku 5
Wuhan 5
Aachen 4
Bonndorf 4
Delft 4
Ferrara 4
Gif-sur-yvette 4
Jeddah 4
North Charleston 4
Nuremberg 4
Pittsburgh 4
Stockholm 4
Tashkent 4
Toronto 4
Amsterdam 3
Bologna 3
Brighton 3
Cerritos 3
City of London 3
Falls Church 3
Frisco 3
Kraainem 3
Newark 3
Paris 3
Querétaro 3
Rome 3
Roubaix 3
Treviglio 3
Warsaw 3
Wroclaw 3
Zurich 3
Totale 2.997
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Nome #
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 341
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 245
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 212
Logic Computing with Stateful Neural Networks of Resistive Switches 209
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 207
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 206
Solving matrix equations in one step with cross-point resistive arrays 205
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 199
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 196
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 192
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 190
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 189
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 184
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 180
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 178
Time Complexity of In-Memory Solution of Linear Systems 176
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing 168
A volatile RRAM synapse for neuromorphic computing 168
One-step regression and classification with cross-point resistive memory arrays 163
In‐Memory Eigenvector Computation in Time O (1) 158
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 155
Combining accuracy and plasticity in convolutional neural networks based on resistive memory arrays for autonomous learning 155
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 153
Totale 4.429
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Categoria #
all - tutte 12.914
article - articoli 8.412
book - libri 0
conference - conferenze 4.502
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.828
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202112 0 0 0 0 0 0 0 0 0 0 0 12
2021/2022174 20 2 18 9 21 12 9 11 9 13 29 21
2022/2023379 38 34 45 24 43 47 1 34 71 16 19 7
2023/2024221 10 24 3 18 22 47 5 25 2 34 5 26
2024/2025554 7 5 12 6 137 66 16 62 62 39 83 59
2025/20262.151 426 303 94 133 203 97 346 90 149 196 76 38
Totale 4.429