RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BRICALLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 2.291
EU - Europa 1.111
AS - Asia 705
SA - Sud America 107
AF - Africa 53
OC - Oceania 7
Totale 4.274
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Nazione #
US - Stati Uniti d'America 2.228
RU - Federazione Russa 483
SG - Singapore 235
IT - Italia 220
CN - Cina 164
BR - Brasile 92
VN - Vietnam 77
GB - Regno Unito 61
FR - Francia 60
DE - Germania 54
CA - Canada 50
AT - Austria 39
KR - Corea 39
MA - Marocco 38
HK - Hong Kong 37
JP - Giappone 37
FI - Finlandia 36
NL - Olanda 33
SE - Svezia 27
JO - Giordania 23
ID - Indonesia 21
ES - Italia 20
IE - Irlanda 19
IN - India 15
UA - Ucraina 9
MX - Messico 8
PL - Polonia 8
SA - Arabia Saudita 8
TW - Taiwan 8
AR - Argentina 7
ZA - Sudafrica 7
BE - Belgio 6
IQ - Iraq 6
LT - Lituania 6
UZ - Uzbekistan 5
AU - Australia 4
BD - Bangladesh 4
CH - Svizzera 4
GR - Grecia 4
PH - Filippine 4
HU - Ungheria 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
TN - Tunisia 3
TR - Turchia 3
BY - Bielorussia 2
CO - Colombia 2
EC - Ecuador 2
EE - Estonia 2
EG - Egitto 2
IL - Israele 2
LK - Sri Lanka 2
LV - Lettonia 2
MY - Malesia 2
NO - Norvegia 2
PA - Panama 2
PK - Pakistan 2
RO - Romania 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BJ - Benin 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CL - Cile 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
GE - Georgia 1
HN - Honduras 1
HR - Croazia 1
IR - Iran 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MM - Myanmar 1
NI - Nicaragua 1
OM - Oman 1
PE - Perù 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
VE - Venezuela 1
Totale 4.274
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Città #
Ashburn 370
Fairfield 218
Chandler 177
San Jose 154
Singapore 152
Santa Clara 151
Milan 130
Woodbridge 94
Wilmington 93
Seattle 83
Houston 76
Moscow 61
Los Angeles 60
Cambridge 58
Dallas 47
The Dalles 46
Beijing 42
Seoul 38
Council Bluffs 36
Vienna 35
Hong Kong 31
Ottawa 28
Tokyo 28
Ann Arbor 27
Ho Chi Minh City 27
Helsinki 25
London 24
Amman 23
Boardman 23
Kenitra 23
Lawrence 21
Dearborn 20
Medford 20
Dublin 19
Lauterbourg 18
New York 18
Hanoi 16
Jakarta 16
Buffalo 15
Norwalk 15
Frankfurt am Main 14
Casablanca 13
Hefei 13
Málaga 13
Redmond 13
Washington 13
Phoenix 12
Orem 10
Redwood City 10
São Paulo 10
San Diego 9
Shanghai 9
Atlanta 7
East Aurora 7
Montreal 7
Taipei 7
Chennai 6
Denver 6
Duncan 6
Johannesburg 6
Kent 6
Boston 5
Brooklyn 5
Chicago 5
Da Nang 5
Guangzhou 5
Lappeenranta 5
Tianjin 5
Turku 5
Wuhan 5
Aachen 4
Bonndorf 4
Delft 4
Ferrara 4
Gif-sur-yvette 4
Jeddah 4
North Charleston 4
Nuremberg 4
Pittsburgh 4
Stockholm 4
Tashkent 4
Toronto 4
Amsterdam 3
Bologna 3
Brighton 3
Cerritos 3
City of London 3
Falls Church 3
Kraainem 3
Newark 3
Paris 3
Querétaro 3
Rome 3
Roubaix 3
Treviglio 3
Warsaw 3
Wroclaw 3
Zurich 3
Auckland 2
Baghdad 2
Totale 2.900
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Nome #
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 286
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 241
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 210
Logic Computing with Stateful Neural Networks of Resistive Switches 205
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 204
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 202
Solving matrix equations in one step with cross-point resistive arrays 202
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 198
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 193
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 189
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 188
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 186
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 178
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 178
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 177
Time Complexity of In-Memory Solution of Linear Systems 173
A volatile RRAM synapse for neuromorphic computing 166
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing 160
One-step regression and classification with cross-point resistive memory arrays 159
In‐Memory Eigenvector Computation in Time O (1) 156
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 152
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 151
Combining accuracy and plasticity in convolutional neural networks based on resistive memory arrays for autonomous learning 151
Totale 4.305
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Categoria #
all - tutte 12.415
article - articoli 8.053
book - libri 0
conference - conferenze 4.362
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.830
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202197 0 0 0 0 0 0 0 0 0 67 18 12
2021/2022174 20 2 18 9 21 12 9 11 9 13 29 21
2022/2023379 38 34 45 24 43 47 1 34 71 16 19 7
2023/2024221 10 24 3 18 22 47 5 25 2 34 5 26
2024/2025554 7 5 12 6 137 66 16 62 62 39 83 59
2025/20262.027 426 303 94 133 203 97 346 90 149 186 0 0
Totale 4.305