LAVIZZARI, SIMONE
LAVIZZARI, SIMONE
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation"
2007-01-01 Ielmini, Daniele; Lavizzari, Simone; D., Sharma; Lacaita, ANDREA LEONARDO
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
2009-01-01 Fugazza, Davide; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells
2008-01-01 Ielmini, Daniele; Sharma, Deepak; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Random telegraph signal noise in phase change memory devices
2010-01-01 Fugazza, Davide; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO