RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

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How to squeeze high quantum efficiency and high time resolution out of a SPAD 1-gen-1992 LACAITA, ANDREA LEONARDOZAPPA, FRANCOCOVA, SERGIORIPAMONTI, GIANCARLOSOTTOCORNOLA SPINELLI, ALESSANDRO
Photon-assisted avalanche spreading in reach-through photodiodes 1-gen-1993 LACAITA, ANDREA LEONARDOCOVA, SERGIOSOTTOCORNOLA SPINELLI, ALESSANDROZAPPA, FRANCO
Limits to the timing performance of single-photon avalanche diodes 1-gen-1994 LACAITA, ANDREA LEONARDOLONGHI, STEFANOSOTTOCORNOLA SPINELLI, ALESSANDRO
Avalanche transients in shallow p-n junction biased above breakdown 1-gen-1995 LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDROAND S. LONGHI
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREA +
Dead space approximation for impact ionization in silicon 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREALACAITA, ANDREA LEONARDO
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDRO +
Mean Gain of Avalanche Photodiodes in a Dead Space Model 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Physics and Numerical Simulation of Single Photon Avalanche Diodes. 1-gen-1997 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Impact ionization in silicon: A microscopic view 1-gen-1998 PACELLI, ANDREASOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Self-Consistent 2-D Model for Quantum Effects in n-MOS Transistors 1-gen-1998 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREA +
Energy Distribution of Stress-Induced Oxide Traps. 1-gen-1998 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Characterization of back channel interface in SOI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Effect of N2O nitridation on the eletrical properties of MOS gate oxides 1-gen-1998 PACELLI, ANDREALACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Avalanche detector with ultraclean response for time-resolved photon counting 1-gen-1998 SOTTOCORNOLA SPINELLI, ALESSANDROGHIONI, MASSIMO ANTONIOCOVA, SERGIO +
Separation of electron and hole traps by transient current analysis 1-gen-1999 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDORIGAMONTI, MATTEO ANTONIOIELMINI, DANIELE +
MOSFET simulation with quantum effects and non-local mobility model 1-gen-1999 SOTTOCORNOLA SPINELLI, ALESSANDROVILLA, STEFANOLACAITA, ANDREA LEONARDO +
Carrier quantization at flat bands in MOS devices 1-gen-1999 PACELLI, ANDREASOTTOCORNOLA SPINELLI, ALESSANDROPERRON, LAURA MARIA
Experimental method for the determination of the energy distribution of stress-induced oxide traps 1-gen-1999 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDORIGAMONTI, MATTEO ANTONIO +
Analysis of space and Energy Distribution of Stress-Induced Oxide traps 1-gen-1999 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Modeling of SILC based on electron and hole tunneling - Part I: transient effects 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS 1-gen-2000 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Polysilicon quantization effects on the electrical properties of MOS transistors 1-gen-2000 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREALACAITA, ANDREA LEONARDO
Modeling of SILC based on electron and hole tunneling -- Part II: Steady-state 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
The impact of polysilicon quantization on ultra-thin oxide MOSFET characteristics 1-gen-2000 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Impact ionization and stress-induced leakage current in thin gate oxides 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Evidence for recombination at oxide defects and new SILC model 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A recombination model for transient and stationary stress-induced leakage current 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Experimental and numerical analysis of the quantum yield 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Experimental evidence for recombination-assisted leakage in thin oxides 1-gen-2000 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Different types of defects in silicon dioxide characterized by their transient behavior 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
New technique for fast characterization of SILC distribution in Flash arrays 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3nm) 1-gen-2001 SOTTOCORNOLA SPINELLI, ALESSANDRO +
A recombination- and trap-assisted tunneling model for stress-induced leakage current 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A detailed investigation of the quantum yield experiment 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Fully 2D quantum-mechanical simulation of nanoscale MOSFETs 1-gen-2001 LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Statistical modeling of reliability and scaling projections for Flash memories 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
An improved formula for the determination of the polysilicon doping 1-gen-2001 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREALACAITA, ANDREA LEONARDO
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 1-gen-2001 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDRO +
Monitoring Flash EEPROM reliability by equivalent cell analysis. 1-gen-2002 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Correlated defect generation in thin oxides and its impact on Flash reliability 1-gen-2002 IELMINI, DANIELELACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Two-dimensional quantum effects in nanoscale MOSFETs 1-gen-2002 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO
Modeling of stress-induced leakage current and impact ionization in MOS devices 1-gen-2002 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Statistical profiling of SILC spot in Flash memories 1-gen-2002 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Simulation of polysilicon quantization and its effect on n-and p-MOSFET performance 1-gen-2002 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREALACAITA, ANDREA LEONARDO
Drain-accelerated degradation of tunnel oxides in Flash memories 1-gen-2002 IELMINI, DANIELELACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
An analytical model for flat-band polysilicon quantization in MOS devices 1-gen-2002 SOTTOCORNOLA SPINELLI, ALESSANDRO +
Modeling of anomalous SILC in Flash memories based on tunneling at multiple defects 1-gen-2002 IELMINI, DANIELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Mostrati risultati da 1 a 50 di 247
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