We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models arc first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.
Fully 2D quantum-mechanical simulation of nanoscale MOSFETs
LACAITA, ANDREA LEONARDO;SOTTOCORNOLA SPINELLI, ALESSANDRO;
2001-01-01
Abstract
We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models arc first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.File in questo prodotto:
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