We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models arc first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.

Fully 2D quantum-mechanical simulation of nanoscale MOSFETs

LACAITA, ANDREA LEONARDO;SOTTOCORNOLA SPINELLI, ALESSANDRO;
2001

Abstract

We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models arc first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001
3-211-83708-6
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/536371
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