CAGLI, CARLO
 Distribuzione geografica
Continente #
NA - Nord America 1.727
EU - Europa 493
AS - Asia 175
SA - Sud America 3
Continente sconosciuto - Info sul continente non disponibili 2
Totale 2.400
Nazione #
US - Stati Uniti d'America 1.712
UA - Ucraina 100
AT - Austria 81
SE - Svezia 62
SG - Singapore 59
DE - Germania 56
IT - Italia 46
FI - Finlandia 37
GB - Regno Unito 36
CN - Cina 29
JO - Giordania 28
VN - Vietnam 28
IE - Irlanda 23
CA - Canada 15
FR - Francia 15
SI - Slovenia 15
BE - Belgio 11
TW - Taiwan 9
JP - Giappone 7
KR - Corea 7
RU - Federazione Russa 5
IN - India 3
EU - Europa 2
HK - Hong Kong 2
IR - Iran 2
NL - Olanda 2
RO - Romania 2
BG - Bulgaria 1
BO - Bolivia 1
CH - Svizzera 1
CL - Cile 1
MY - Malesia 1
PE - Perù 1
Totale 2.400
Città #
Fairfield 256
Woodbridge 183
Ann Arbor 129
Ashburn 124
Chandler 120
Seattle 117
Houston 115
Wilmington 107
Cambridge 88
Santa Clara 87
Vienna 81
Jacksonville 57
Singapore 42
Dearborn 35
Boardman 32
Lawrence 29
Medford 29
Amman 28
Dublin 22
Des Moines 18
Beijing 17
Dong Ket 14
Ottawa 14
Milan 11
San Diego 11
Brussels 10
New York 9
Helsinki 8
Los Angeles 6
Falkenstein 5
Portland 5
Karlsruhe 4
Moriyama 4
Seongnam 4
Taipei 4
London 3
Norwalk 3
Redwood City 3
The Dalles 3
Verona 3
Acton 2
Auburn Hills 2
Berlin 2
Cluj-napoca 2
Fremont 2
Gif-sur-yvette 2
Hefei 2
Honcho 2
Kunming 2
Nanzih District 2
Velikiy Novgorod 2
Zhengzhou 2
Aachen 1
Amsterdam 1
Atlanta 1
Central 1
Central District 1
Clifton 1
Columbus 1
Frankfurt An Der Oder 1
Frankfurt am Main 1
Groningen 1
Indiana 1
Kish 1
La Paz 1
Lima 1
Nanjing 1
New Delhi 1
Paris 1
Pistoia 1
Quzhou 1
Santiago Metropolitan 1
Sofia 1
Southend 1
Toronto 1
Tronoh 1
Ufa 1
Villeurbanne 1
Zurich 1
Totale 1.891
Nome #
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 174
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 104
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 103
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 102
Size-dependent temperature instability in NiO–based resistive switching memory 96
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 96
Resistance transition in metal oxides induced by electronic threshold switching 95
Analysis and modeling of resistive switching statistics 94
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 93
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 92
Cell-based models for the switching statistics of RRAM 92
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 91
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 90
Reset Statistics of NiO-Based Resistive Switching Memories 89
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 86
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. 84
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 77
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 75
Impact of electrode materials on resistive-switching memory (RRAM) programmning 75
Filament diffusion model for simulating reset and retention processes in RRAM 73
Nanowire-based resistive switching memories: devices, operation and scaling 67
Size-dependent retention time in NiO-based resistive switching memories 67
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 66
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 61
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 56
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 56
Resistance-dependent switching in NiO-based filamentary RRAM devices 54
Resistive-Switching Memory Devices Based on Metal Oxides: Modeling of Unipolar Switching, Reliability, and Scaling 50
Reset instability in pulsed-operated unipolar resistive switching memory 45
Totale 2.403
Categoria #
all - tutte 8.041
article - articoli 4.720
book - libri 0
conference - conferenze 3.139
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 182
Totale 16.082


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020442 0 0 0 0 73 66 81 55 70 27 54 16
2020/2021345 25 17 34 14 97 13 24 30 14 23 19 35
2021/2022246 12 37 23 37 9 4 17 8 11 12 24 52
2022/2023295 33 11 35 23 38 37 0 22 66 4 21 5
2023/2024120 10 23 9 11 3 9 19 3 0 7 1 25
2024/2025198 2 16 25 18 137 0 0 0 0 0 0 0
Totale 2.403