RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

CAGLI, CARLO
 Distribuzione geografica
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Continente #
NA - Nord America 2.391
EU - Europa 1.082
AS - Asia 665
SA - Sud America 122
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 2
Totale 4.275
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Nazione #
US - Stati Uniti d'America 2.358
RU - Federazione Russa 480
SG - Singapore 262
CN - Cina 157
BR - Brasile 102
UA - Ucraina 101
AT - Austria 81
VN - Vietnam 75
DE - Germania 73
SE - Svezia 64
GB - Regno Unito 56
IT - Italia 50
FR - Francia 48
FI - Finlandia 39
JO - Giordania 29
CA - Canada 26
KR - Corea 26
IE - Irlanda 24
JP - Giappone 21
IN - India 19
SI - Slovenia 15
HK - Hong Kong 12
TW - Taiwan 12
BD - Bangladesh 11
BE - Belgio 11
PL - Polonia 10
NL - Olanda 8
TR - Turchia 8
ES - Italia 7
ID - Indonesia 5
IQ - Iraq 5
PK - Pakistan 5
RO - Romania 5
UZ - Uzbekistan 5
AR - Argentina 4
VE - Venezuela 4
ZA - Sudafrica 4
MX - Messico 3
PE - Perù 3
AL - Albania 2
BO - Bolivia 2
CR - Costa Rica 2
EC - Ecuador 2
EU - Europa 2
IR - Iran 2
MA - Marocco 2
PY - Paraguay 2
SA - Arabia Saudita 2
TN - Tunisia 2
AZ - Azerbaigian 1
BB - Barbados 1
BG - Bulgaria 1
BW - Botswana 1
BY - Bielorussia 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CL - Cile 1
CO - Colombia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
EG - Egitto 1
GY - Guiana 1
HU - Ungheria 1
IL - Israele 1
KE - Kenya 1
KZ - Kazakistan 1
LV - Lettonia 1
MD - Moldavia 1
MV - Maldive 1
MY - Malesia 1
NO - Norvegia 1
OM - Oman 1
PH - Filippine 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 4.275
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Città #
Ashburn 257
Fairfield 256
Woodbridge 183
Santa Clara 150
San Jose 139
Singapore 135
Ann Arbor 129
Chandler 120
Seattle 118
Houston 117
Wilmington 108
Cambridge 88
Vienna 81
Beijing 65
Jacksonville 57
The Dalles 51
Moscow 50
Council Bluffs 40
Dearborn 35
Boardman 32
Lawrence 29
Los Angeles 29
Medford 29
Amman 28
Lauterbourg 27
Dublin 23
Buffalo 21
New York 20
Seoul 19
Des Moines 18
North Charleston 17
Dong Ket 14
Ottawa 14
Tokyo 13
Milan 12
São Paulo 12
Hanoi 11
San Diego 11
Brussels 10
Hong Kong 10
Dallas 9
Ho Chi Minh City 9
Warsaw 9
Frankfurt am Main 8
Helsinki 8
Hillsboro 7
London 6
Montreal 6
Taipei 6
Ankara 5
Boston 5
Chicago 5
Falkenstein 5
Mumbai 5
Munich 5
Poplar 5
Portland 5
Tashkent 5
Atlanta 4
Belo Horizonte 4
Hefei 4
Karlsruhe 4
Las Vegas 4
Moriyama 4
Orem 4
Seongnam 4
Amsterdam 3
Berlin 3
Brooklyn 3
Campinas 3
Da Nang 3
Haiphong 3
Lima 3
Manchester 3
Norwalk 3
Phoenix 3
Redondo Beach 3
Redwood City 3
Shenzhen 3
Tianjin 3
Verona 3
Wuhan 3
Xi'an 3
Zhengzhou 3
Acton 2
Auburn Hills 2
Calgary 2
Chennai 2
Cluj-napoca 2
Curitiba 2
Detroit 2
Dhaka 2
Formosa 2
Fremont 2
Gif-sur-yvette 2
Hangzhou 2
Honcho 2
Islamabad 2
Johannesburg 2
Kunming 2
Totale 2.809
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Nome #
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 269
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 179
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 179
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 169
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 167
Cell-based models for the switching statistics of RRAM 166
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 166
Resistance transition in metal oxides induced by electronic threshold switching 165
Analysis and modeling of resistive switching statistics 165
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 161
Reset Statistics of NiO-Based Resistive Switching Memories 153
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. 151
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 150
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 149
Size-dependent temperature instability in NiO–based resistive switching memory 146
Filament diffusion model for simulating reset and retention processes in RRAM 146
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 142
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 141
Impact of electrode materials on resistive-switching memory (RRAM) programmning 134
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 131
Resistance-dependent switching in NiO-based filamentary RRAM devices 130
Nanowire-based resistive switching memories: devices, operation and scaling 127
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 126
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 125
Reset instability in pulsed-operated unipolar resistive switching memory 114
Resistive-Switching Memory Devices Based on Metal Oxides: Modeling of Unipolar Switching, Reliability, and Scaling 110
Size-dependent retention time in NiO-based resistive switching memories 109
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 107
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 101
Totale 4.278
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Categoria #
all - tutte 12.564
article - articoli 7.404
book - libri 0
conference - conferenze 4.845
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 315
Totale 25.128
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202177 0 0 0 0 0 0 0 0 0 23 19 35
2021/2022246 12 37 23 37 9 4 17 8 11 12 24 52
2022/2023295 33 11 35 23 38 37 0 22 66 4 21 5
2023/2024120 10 23 9 11 3 9 19 3 0 7 1 25
2024/2025573 2 16 25 18 166 34 10 64 104 18 62 54
2025/20261.500 352 321 51 71 91 123 207 76 50 158 0 0
Totale 4.278