RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

CAGLI, CARLO
 Distribuzione geografica
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Continente #
NA - Nord America 2.526
EU - Europa 1.168
AS - Asia 675
SA - Sud America 122
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 5
Totale 4.509
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Nazione #
US - Stati Uniti d'America 2.480
RU - Federazione Russa 480
SG - Singapore 264
CN - Cina 159
IT - Italia 133
BR - Brasile 102
UA - Ucraina 102
AT - Austria 81
VN - Vietnam 81
DE - Germania 73
SE - Svezia 64
GB - Regno Unito 56
FR - Francia 48
FI - Finlandia 39
CA - Canada 29
JO - Giordania 29
KR - Corea 26
IE - Irlanda 24
JP - Giappone 21
IN - India 19
SI - Slovenia 15
HK - Hong Kong 12
TW - Taiwan 12
BD - Bangladesh 11
BE - Belgio 11
PL - Polonia 10
ES - Italia 8
NL - Olanda 8
TR - Turchia 8
ID - Indonesia 5
IQ - Iraq 5
PK - Pakistan 5
RO - Romania 5
UZ - Uzbekistan 5
AR - Argentina 4
VE - Venezuela 4
ZA - Sudafrica 4
CR - Costa Rica 3
JM - Giamaica 3
MX - Messico 3
PE - Perù 3
AL - Albania 2
BO - Bolivia 2
EC - Ecuador 2
EU - Europa 2
IR - Iran 2
MA - Marocco 2
PY - Paraguay 2
SA - Arabia Saudita 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
AZ - Azerbaigian 1
BB - Barbados 1
BG - Bulgaria 1
BW - Botswana 1
BY - Bielorussia 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CL - Cile 1
CO - Colombia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
EG - Egitto 1
GP - Guadalupe 1
GT - Guatemala 1
GY - Guiana 1
HU - Ungheria 1
IL - Israele 1
KE - Kenya 1
KZ - Kazakistan 1
LC - Santa Lucia 1
LV - Lettonia 1
MD - Moldavia 1
MV - Maldive 1
MY - Malesia 1
NO - Norvegia 1
OM - Oman 1
PH - Filippine 1
PR - Porto Rico 1
PT - Portogallo 1
SV - El Salvador 1
TH - Thailandia 1
Totale 4.506
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Città #
Ashburn 265
Fairfield 256
Woodbridge 183
Santa Clara 153
San Jose 151
Singapore 137
Ann Arbor 129
Chandler 120
Houston 119
Seattle 118
Wilmington 108
Cambridge 88
Vienna 81
Council Bluffs 67
Beijing 66
Jacksonville 57
Boardman 55
The Dalles 51
Moscow 50
Dearborn 35
Los Angeles 30
Lawrence 29
Medford 29
Milan 29
Amman 28
Lauterbourg 27
Dublin 23
Buffalo 22
New York 20
Seoul 19
Des Moines 18
North Charleston 17
Dong Ket 14
Ottawa 14
Hanoi 13
Ho Chi Minh City 13
Tokyo 13
São Paulo 12
Dallas 11
San Diego 11
Brussels 10
Hong Kong 10
Rome 9
Warsaw 9
Frankfurt am Main 8
Helsinki 8
Brooklyn 7
Hillsboro 7
Montreal 7
London 6
Taipei 6
Ankara 5
Boston 5
Chicago 5
Falkenstein 5
Mumbai 5
Munich 5
Poplar 5
Portland 5
Tashkent 5
Atlanta 4
Belo Horizonte 4
Bologna 4
Florence 4
Hefei 4
Karlsruhe 4
Las Vegas 4
Moriyama 4
Orem 4
Seongnam 4
Turin 4
Verona 4
Amsterdam 3
Berlin 3
Campinas 3
Cleveland 3
Da Nang 3
Haiphong 3
Kingston 3
Lima 3
Manchester 3
Norwalk 3
Palermo 3
Phoenix 3
Redondo Beach 3
Redwood City 3
Shenzhen 3
Tianjin 3
Wuhan 3
Xi'an 3
Zhengzhou 3
Acton 2
Auburn Hills 2
Bari 2
Cagliari 2
Calgary 2
Chennai 2
Cluj-napoca 2
Curitiba 2
Detroit 2
Totale 2.936
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Nome #
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 279
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 194
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 184
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 175
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 173
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 173
Cell-based models for the switching statistics of RRAM 172
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 171
Resistance transition in metal oxides induced by electronic threshold switching 170
Analysis and modeling of resistive switching statistics 170
Reset Statistics of NiO-Based Resistive Switching Memories 160
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 157
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. 155
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 154
Size-dependent temperature instability in NiO–based resistive switching memory 154
Filament diffusion model for simulating reset and retention processes in RRAM 150
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 150
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 146
Impact of electrode materials on resistive-switching memory (RRAM) programmning 144
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 140
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 139
Resistance-dependent switching in NiO-based filamentary RRAM devices 137
Nanowire-based resistive switching memories: devices, operation and scaling 136
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 130
Size-dependent retention time in NiO-based resistive switching memories 127
Reset instability in pulsed-operated unipolar resistive switching memory 123
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 117
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 115
Resistive-Switching Memory Devices Based on Metal Oxides: Modeling of Unipolar Switching, Reliability, and Scaling 114
Totale 4.509
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Categoria #
all - tutte 13.590
article - articoli 8.008
book - libri 0
conference - conferenze 5.233
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 349
Totale 27.180
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022234 0 37 23 37 9 4 17 8 11 12 24 52
2022/2023295 33 11 35 23 38 37 0 22 66 4 21 5
2023/2024120 10 23 9 11 3 9 19 3 0 7 1 25
2024/2025573 2 16 25 18 166 34 10 64 104 18 62 54
2025/20261.663 352 321 51 71 91 123 207 76 50 165 27 129
2026/202768 27 41 0 0 0 0 0 0 0 0 0 0
Totale 4.509