VON KÄNEL, HANS
VON KÄNEL, HANS
2-D Hole Gas with Two-Subband Occupation in a Strained Ge Channel: Scattering Mechanisms
2006-01-01 Roessner, B.; VON KÄNEL, Hans; Chrastina, Daniel; Isella, Giovanni; Batlogg, B.
An experimental and theoretical investigation of a magnetically confined dc plasma discharge
2008-01-01 Rondanini, Maurizio; Cavallotti, CARLO ALESSANDRO; D., Ricci; Chrastina, Daniel; Isella, Giovanni; Moiseev, Tamara; VON KÄNEL, Hans
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
2006-01-01 R., Ginige; B., Corbett; M., Modreanu; C., Barrett; J., Hilgarth; Isella, Giovanni; Chrastina, Daniel; VON KÄNEL, Hans
Effective g factor of 2D holes in strained Ge quantum wells
2018-01-01 Drichko, I. L.; Dmitriev, A. A.; Malysh, V. A.; Smirnov, I. Yu.; Von Känel, H.; Kummer, M.; Chrastina, D.; Isella, G.
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
2004-01-01 L., Martinelli; A., Marzegalli; P., Raiteri; Bollani, Monica; F., Montalenti; L., Miglio; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition
2004-01-01 VON KÄNEL, Hans; Chrastina, Daniel; B., Roessner; Isella, Giovanni; J. P., Hague; Bollani, Monica
Logic gates with a single Hall bar heterostructure
2006-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapor deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
2005-01-01 Y., Chriqui; G., SAINT GIRONS; Isella, Giovanni; VON KÄNEL, Hans; S., Bouchoule; I., Sagnes
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
2004-01-01 Isella, Giovanni; Chrastina, Daniel; B., Rossner; T., Hackbarth; H. J., Herzog; U., Konig; VON KÄNEL, Hans
Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices
2014-01-01 Mojmír, Meduna; Claudiu V., Falub; Isa, Fabio; Chrastina, Daniel; Thomas, Kreiliger; Isella, Giovanni; VON KÄNEL, Hans
Scaling hetero-epitaxy from layers to three-dimensional crystals
2012-01-01 Falub, C. . V.; VON KÄNEL, Hans; Isa, Fabio; R., bergamaschini; A., marzegalli; Chrastina, Daniel; Isella, Giovanni; E., müller; P., niedermann; L., miglio
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
2004-01-01 M., ENCISO AGUILAR; M., Rodriguez; N., Zerouinian; F., Aniel; T., Hackbarth; H. J., Herzog; U., Koenig; S., Mantl; B., Hollaender; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans; K., Lyyutovich; M., Oehme
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime
2018-01-01 Drichko, I. L.; Dmitriev, A. A.; Malysh, V. A.; Smirnov, I. Yu.; Galperin, Yu. M.; von Känel, H.; Kummer, M.; Isella, G.; Chrastina, D.
X-Ray Nano-Diffraction on Epitaxial Crystals
2014-01-01 Mojmír, Meduña; Claudiu V., Falub; Isa, Fabio; Chrastina, Daniel; Thomas, Kreiliger; Isella, Giovanni; Alfonso G., Taboada; Philippe, Niedermann; VON KÄNEL, Hans